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TH58NVG3S0HBAI6
8G-BIT (1G x 8 BIT) CMOS NAND E2PROM
Description
TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks. The device has two 4352-byte static regi...
Toshiba
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