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TC55257CPL-10 Datasheet, Equivalent, STATIC RAM.SILICON GATE CMOS STATIC RAM SILICON GATE CMOS STATIC RAM |
Part | TC55257CPL-10 |
---|---|
Description | SILICON GATE CMOS STATIC RAM |
Feature | TOSHIBA
TC55257CPL/CFL/CSPL/CFIL/CfRL-7 0/85/10
SILICON GATE CMOS
PRELIMINARY
32,768 WORD x 8 BIT STATIC RAM
Descr iption
The TC55257CPL is a 262,144 bit CMOS static random access memory organi zed as 32,768 words by 8 bits and opera ted from a single 5V power supply. Adva nced circuit techniques provide both hi gh speed and low power features with an operating current of 5mNMHz iliP. ) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which t he standby current is 2jlA at room temp erature. The TC55257CPL has two control inputs. Chip . |
Manufacture | Toshiba |
Datasheet |
Part | TC55257CPL-10 |
---|---|
Description | SILICON GATE CMOS STATIC RAM |
Feature | TOSHIBA
TC55257CPL/CFL/CSPL/CFIL/CfRL-7 0/85/10
SILICON GATE CMOS
PRELIMINARY
32,768 WORD x 8 BIT STATIC RAM
Descr iption
The TC55257CPL is a 262,144 bit CMOS static random access memory organi zed as 32,768 words by 8 bits and opera ted from a single 5V power supply. Adva nced circuit techniques provide both hi gh speed and low power features with an operating current of 5mNMHz iliP. ) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which t he standby current is 2jlA at room temp erature. The TC55257CPL has two control inputs. Chip . |
Manufacture | Toshiba |
Datasheet |
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