STATIC RAM. TC55257CSPL-85 Datasheet

TC55257CSPL-85 RAM. Datasheet pdf. Equivalent

TC55257CSPL-85 Datasheet
Recommendation TC55257CSPL-85 Datasheet
Part TC55257CSPL-85
Description SILICON GATE CMOS STATIC RAM
Feature TC55257CSPL-85; TOSHIBA TC55257CPL/CFL/CSPL/CFIL/CfRL-70/85/10 SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT.
Manufacture Toshiba
Datasheet
Download TC55257CSPL-85 Datasheet




Toshiba TC55257CSPL-85
TOSHIBA
TC55257CPL/CFL/CSPL/CFIL/CfRL-70/85/10
SILICON GATE CMOS
PRELIMINARY
32,768 WORD x 8 BIT STATIC RAM
Description
The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from
a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
5mNMHz iliP.) and a minimum cycle time of 70ns.
When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2jlA at room tem-
perature. The TC55257CPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while
an output enable input (OE) provides fast memory access. The TC55257CPL is suitable for use in microprocessor systems where
high speed, low power, and battery backup are required.
The TC55257CPL is offered in a standard dual-in-line 28-pin plastic package (0.6/0.3 inch width), a small outline plastic pack-
age, and a thin small outline plastic package (forward type, reverse type).
Features
• Low power dissipation:
• Standby current:
• Single 5V power supply
• Access time (max.)
27.5mW/MHz (typ.)
1001lA (max.)
TC55257CPL/CFL/CSPL/CFTL/CTRL
-70 -85 -10
Access Time
CE Access Time
OE Access Time
70ns
70ns
35ns
85ns
85ns
45ns
100ns
100ns
50ns
• Power down feature:
CE
• Data retention supply voltage:
2.0 - 5.5V
• Inputs and outputs TIL compatible
• Package
TC55257CPL: DIP28-P-600
TC55257CFL
TC55257CSPL
TC55257CFTL
TC55257CTRL
: SOP28-P-450
: DIP28-P-300B
: TSOP28-P
: TSOP28-P-A
Pin Connection (Top View)
0 28 PIN DIP & SOP
0 28 PIN TSOP
A14
A12
A7
A6
AS
A4
A3
A2
1102
1/03
GND
voo
RJIN
AU
A8
A9
All
OE
A10
CE
1108
1107
1106
1/05
1/04
(forward type)
4
!5 28
( reverse type)
l.:l
28 1~
Pin Names
AO - A14 Address Inputs
RIW
OE
ReadlWrite Control Input
Output Enable Input
CE Chip Enable Input
1/01 - 1/08 Data Input/Output
Voo
GND
Power (+5V)
Ground
PIN NO.
12
PIN NAME OE A11
PIN NO.
15 16
PIN NAME A2 A1
3 4 5 6 7 8 9 10 11 12 13 14
Ag As A13 RIW Voo A14 A12 A7 A6 A5 A4 A3
17 18 19 20 21
22 23 24 25 26
27 28
Ao 1/01 1/02 1/03 GND 1/04 1/05 1/06 1/07 1/08 CE A10
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
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Toshiba TC55257CSPL-85
TC55257CPLlCFLlCSPLlCFTLlCTRL-70/85/10
Block Diagram
Static RAM
~
1101 - . . . J
0--+-.-----4 0
;
A
~
0-++""",,---1 0
~o-+f-+-if-r---I v
:0-+-+-++++......-4
~a:
'"
1I08A
~0_ Vo zw
~H
. . - 0 Voo
MEMORY CELL
ARRAY
512 x 64x8
(262144)
64
SENSE AMP.
COLUMN ADORESS
DECODER
CIOLUR~Z'S'W~RESS1
. . - 0 GND
~7 :;
:::'
=UlM:::::-:"--D-...----,
1_ '-[:::-->+---,
J - .............
F-
rIII 1111111
~~~~~~
6 J J 6 J J CE
AOAl A2 A3 A4A10
Ceo-~~--.... "JI----- CE
Operating Mode
~MODE
Read
Write
Output Deselect
Standby
* H orL
CE
L
L
L
H
OE R/W 1/01 -1/08 POWER
L
H
DOUT
1000
* L DIN 1000
H H High-Z 1000
* * High-Z loos
Maximum Ratings
SYMBOL
ITEM
RATING
UNIT
Voo Power Supply Voltage
VIN Input Voltage
VI/O Input and Output Voltage
Po Power Dissipation
TSOLOER Soldering Temperature' Time
TSTRG Storage Temperature
TOPR Operating Temperature
-0.3 - 7.0
-0.3* - 7.0
-0.5* - Voo + 0.5
1.0/0.8/0.6**
260·10
-55 - 150
0-70
V
V
V
W
°C'sec
°C
°C
* -3.0V with a pulse width of 50ns
** Package dependent: 0.6 inch 1.0W, 0.3 inch 0.8W, 0.45 inch 0.6W
A-52
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
PRELIMINARY



Toshiba TC55257CSPL-85
Static RAM
TC55257CPLlCFLlCSPLlCFTLlCTRL-70/85/10
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
VOH Data Retention Supply Voltage
* -3.0V with a pulse width of 50ns
MIN.
4.5
2.2
-0.3*
2.0
TYP. MAX. UNIT
5.0 5.5
- Voo + 0.3
- 0.8
- 5.5
V
DC Characteristics (Ta = 0 - 70°C, Voo = 5V±10%)
SYMBOL
PARAMETER
TEST CONDITION
MIN. TYP. MAX. UNIT
III Input Leakage Current
ILO Output Leakage Current
10H Output High Current
10L Output Low Current
10001
Operating Current
10002
100S1
100S2
Standby Current
VIN = 0 - Voo
- - ±1.0 IlA
CE = V1H or RIW = V1L or OE = VIH
VOUT = 0 - Voo
- - ±1.0 !lA
VOH = 2.4V
-1.0 -
- mA
VOL = O.4V
4.0 -
- mA
CE = V1L
R/W = V1H
Other Input = VIHN1L
lOUT = OmA
tcycle = 1!lS
tcycle = Min. cycle
-
-
10 -
- 70
CE = 0.2V
R/W = Voo - 0.2V
Other Input
= Voo - 0.2V/O.2V
lOUT = OmA
tcycle = 11ls
tcycle = Min. cycle
-
-
5 - mA
- 60
CE = V1H
--
3 mA
CE = Voo - 0.2V
Voo = 2.0V - 5.5V
Ta = 0 - 70°C
Ta = 25°C
- - 100
- 2 - !lA
Capacitance* (Ta = 25°C, f = 1MHz)
SYMBOL
PARAMETER
TEST CONDITION
CIN Input Capacitance
COUT Output Capacitance
VIN = GND
VOUT = GND
*This parameter is periodically sampled and is not 100% tested.
MAX.
10
10
UNIT
pF
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
A-53







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