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TC55257CFI-10 Datasheet, Equivalent, STATIC RAM.SILICON GATE CMOS STATIC RAM SILICON GATE CMOS STATIC RAM |
| Part | TC55257CFI-10 |
|---|---|
| Description | SILICON GATE CMOS STATIC RAM |
| Feature | TOSHIBA
1l:55257CPI/CF1/CSPI/CF1l/C1lU~ 5/10
SILICON GATE CMOS
PRELIMINARY
3 2,768 WORD x 8 BIT STATIC RAM
Descript ion
The TC55257CPI is a 262,144 bit CMO S static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advance d circuit techniques provide both high speed and low power features with an op erating current of 5mNMHz i!YP. ) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 21lA at room tempera ture. The TC55257CPI has two control in puts. Chip ena . |
| Manufacture | Toshiba |
| Datasheet |
| Part | TC55257CFI-10 |
|---|---|
| Description | SILICON GATE CMOS STATIC RAM |
| Feature | TOSHIBA
1l:55257CPI/CF1/CSPI/CF1l/C1lU~ 5/10
SILICON GATE CMOS
PRELIMINARY
3 2,768 WORD x 8 BIT STATIC RAM
Descript ion
The TC55257CPI is a 262,144 bit CMO S static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advance d circuit techniques provide both high speed and low power features with an op erating current of 5mNMHz i!YP. ) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 21lA at room tempera ture. The TC55257CPI has two control in puts. Chip ena . |
| Manufacture | Toshiba |
| Datasheet |
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