Barrier Diode. CJLJF3117PB Datasheet

CJLJF3117PB Diode. Datasheet pdf. Equivalent


JCET CJLJF3117PB
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-U Power Management MOSFETs-Schottky
CJLJF3117PB P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
-20V
RDS(on)MAX
100mΩ@-4.5V
135mΩ@-2.5V
ID/IO
-3.3A 
250mΩ@-1.8V 
20V / 0.5A  
DFNWB2×2-6L-U
FEATURE
z Independent Pinout to Each Device to
Each Device to Ease Circuit Design
z High Current Schottky Diode
z Featuring a MOSFET and a
Schottky Barrier Diode
MARKING
APPLICATION
z Optimized for Portable Applications Like Cell Phones,
Digital Cameras,Media Players,etc
z DC-DC Buck Circuits
z Li-ion Battery Applications
z Color Display and Camera Flash Regulators
Equivalent Circuit
K GS
654
MAXIMUM RATINGS (Ta=25unless otherwise noted)
12
A
3
D
Symbol Para
meter
P-MOSFET
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM* Pulse Drain Current
Schottky Barrier Diode
VRRM
Peak Repetitive Reverse Voltage
VR DC Blocking Voltage
IO Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive ratingPluse width limited by junction temperature.
www.cj-elec.com
1
Value
-20
±8
-3.3
-10
20
20
0.5
0.75
83.3
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
/W
A-2,May,2015


CJLJF3117PB Datasheet
Recommendation CJLJF3117PB Datasheet
Part CJLJF3117PB
Description P-channel MOSFET and Schottky Barrier Diode
Feature CJLJF3117PB; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×2-6L-U Power Management MOSFETs-Schottky .
Manufacture JCET
Datasheet
Download CJLJF3117PB Datasheet




JCET CJLJF3117PB
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min
P-MOSFET
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS =0V, ID=-250µA
-20
Zero gate voltage drain current
IDSS VDS =-16V,VGS = 0V
Gate-body leakage current
IGSS VGS =±8V, VDS = 0V
Gate threshold voltage
VGS(th)
VDS =VGS, ID =-250µA
-0.4
VGS =-4.5V, ID =-2A
Drain-source on-resistance(note1)
RDS(on)
VGS =-2.5V, ID =-2A
VGS =-1.8V, ID =-1.6A
Forward transconductance(note1)
gFS VDS=-5V,ID=-2A
2.5
Diode forward voltage(note1)
VSD IS=-1A, VGS = 0V
DYNAMIC PARAMETERS (note 2)
Input capacitance
Output capacitance
Ciss
Coss VDS =-10V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
SWITCHING PARAMETERS (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
td(on)
tr
td(off)
VGS=-4.5V,VDD=-5V,
RG=6, ID=-1A
Turn-off fall time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs VDS =-10V,VGS =-4.5V,
Qgd ID =-2A
Gate Resistance
Rg
SCHOTTKY BARRIER DIODE
Forward voltage
VF IF=0.5A
Reverse current
IR VR=20V
Junction capacitance
Note:
Cj VR=4V,f=1MHz
1.Pulse test: pulse width =300μs, duty cycle2%
2.These parameters have no way to verify.
Typ Max Unit
-1
±100
-1
100
135
250
-1
V
µA
nA
V
m
m
m
S
V
531 pF
91 pF
56 pF
5.2
13.2
13.7
19.1
5.5 6.2
1.0
1.4
8.8
ns
ns
ns
ns
nC
nC
nC
0.55 V
100 µA
40 pF
www.cj-elec.com
2
A-2,May,2015



JCET CJLJF3117PB
7\SLFDO&KDUDFWHULVWLFV
P-channel Characteristics
-10
Ta=25
Pulsed
-8
-6
Output Characteristics
VGS=-2.5V,-3.5V,-4.5V,
VGS=-2.0V
-4
-2
-0
-0
150
120
90
VGS=-1.5V
VGS=-1.0V
-1 -2 -3
DRAIN TO SOURCE VOLTAGE VDS (V)
-4
RDS(ON) —— ID
VGS=-1.8V
Ta=25
Pulsed
VGS=-2.5V
60 VGS=-4.5V
30
-2 -4 -6
DRAIN CURRENT ID (A)
-10
Ta=25
Pulsed
-1
IS —— VSD
-8
-10
Ta=25
Pulsed
-8
Transfer Characteristics
-6
-4
-2
-0
-0.0
-0.5 -1.0 -1.5 -2.0
GATE TO SOURCE VOLTAGE VGS (V)
-2.5
RDS(ON) —— VGS
250
Ta=25
Pulsed
200
150
100 ID=-2.8A
50
0
-0 -2 -4 -6 -8
GATE TO SOURCE VOLTAGE VGS (V)
-0.1
-0.01
-1E-3
-0.2
-0.4 -0.6 -0.8 -1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
www.cj-elec.com
-1.2
3
A-2,May,,2015





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