N-Channel MOSFET. CJND2007 Datasheet

CJND2007 MOSFET. Datasheet pdf. Equivalent


JCET CJND2007
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS
CJND2007
V(BR)DSS
20V
 
Dual N-Channel MOSFET
RDS(on)MAX
 20mΩ@10V
22mΩ @4.5V
24 mΩ@3.8V
26mΩ@2.5V
35mΩ@1.8V
ID
 
7A
 
DFNWB5×2-6L-A
DESCRIPTION
The CJND2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient(note1)
Thermal Resistance from Junction to Ambient(note2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive ratingPluse width limited by junction temperature.
Note1.When mounted on a minimum pad.
2.When mounted on 1 in2of 2oz copper board.
www.cj-elec.com
1
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
Value
20
±12
7
30
175
70
150
-55~+150
260
Unit
V
V
A
A
/W
/W
C,May,2015


CJND2007 Datasheet
Recommendation CJND2007 Datasheet
Part CJND2007
Description Dual N-Channel MOSFET
Feature CJND2007; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND20.
Manufacture JCET
Datasheet
Download CJND2007 Datasheet




JCET CJND2007
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
Diode forward voltage(note 1)
DYNAMIC PARAMETERS (note 2)
V (BR) DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VSD
VGS = 0V, ID =250µA
VDS =16V,VGS = 0V
VGS =±4.5V, VDS = 0V
VGS =±8V, VDS = 0V
VDS =VGS, ID =250µA
VGS =10V, ID =7A
VGS =4.5V, ID =6.6A
VGS =3.8V, ID =6A
VGS =2.5V, ID =5.5A
VGS =1.8V, ID =5A
VDS =5V, ID =7A
IS=1A, VGS = 0V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ciss
Coss
Crss
Qg
Qgs
Qgd
VDS =10V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,ID =7A
td(on)
tr
td(off)
tf
VGS=5V,VDD=10V,
RL=1.35,RGEN=3
Notes :
1. Pulse Test : Pulse width300µs, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20 V
1 µA
±1 µA
±10 µA
0.4 1 V
20 m
22 m
24 m
26 m
35 m
9S
1V
1150
185
145
15
0.8
3.2
pF
pF
pF
nC
nC
nC
6 ns
13 ns
52 ns
16 ns
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2
C,May,2015



JCET CJND2007
7\SLFDO&KDUDFWHULVWLFV
22
Pulsed
20
Output Characteristics
2.2V
16
12
2.0V
1.8V
8
1.5V
4
VGS=1.2V
0
0123456
DRAIN TO SOURCE VOLTAGE VDS (V)
R ——
DS(ON)
I
D
80
Ta=25
Pulsed
60
40 VGS=2V
VGS=10V
20
0
0
0.80
0.75
0.70
0.65
0.60
0.55
25
4 8 12 16
DRAIN CURRENT ID (A)
20
Threshold Voltage
ID=250uA
50 75 100
AMBIENT TEMPERATURE Ta ()
125
20
VDS=5V
Pulsed
15
Transfer Characteristics
10
5 Ta=100
Ta=25
0
0123
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
——
V
GS
80
Ta=25
Pulsed
60
40
ID=3A
20
0
02468
GATE TO SOURCE VOLTAGE VGS (V)
10
Ta=25
Pulsed
I —— V
S SD
10
1
0.1
0.01
0.4
0.6 0.8 1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
1.2
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3
C,May.2015







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