P-Channel MOSFET. CJX3152P Datasheet

CJX3152P MOSFET. Datasheet pdf. Equivalent


JCET CJX3152P
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate MOSFETS
CJX3152P Dual P-Channel MOSFET
V(BR)DSS
-20V
RDS(on)MAX
700 mΩ@-4.5V
1Ω@-2.5V
1.2Ω@-1.8V 
ID
-0.66A 
SOT-563
FEATURE
z Lead Free Product is Acquired
z Surface Mount Package
z P-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
MARKING
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small
Portable Electronics
z Logic Level Shift
Equivalent Circuit
D1 G2 S2
654
1 23
S1 G1 D2
ABSOLUTE MAXIMUM RATINGS (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
TL
Value
-20
±12
-0.66
-1
150
833
150
-55~ 150
260
Unit
V
V
A
A
mW
/W
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1
B,Sep,2015


CJX3152P Datasheet
Recommendation CJX3152P Datasheet
Part CJX3152P
Description Dual P-Channel MOSFET
Feature CJX3152P; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS CJX3152P Dua.
Manufacture JCET
Datasheet
Download CJX3152P Datasheet




JCET CJX3152P
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-16V,VGS = 0V
Gate-body leakage current
IGSS VGS =±4.5V, VDS = 0V
Gate threshold voltage (note 2)
Drain-source on-resistance(note 2)
VGS(th)
RDS(on)
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-0.66A
VGS =-2.5V, ID =-0.5A
VGS =-1.8V, ID =-0.4A
Forward tranconductance(note 2)
gFS VDS =-10V, ID =-0.43A
Diode forward voltage
VSD IS=-0.35A, VGS = 0V
DYNAMIC PARAMETERS(note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS =-16V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 4)
Turn-on delay time (note 3)
td(on)
Turn-on rise time (note 3)
Turn-off delay time (note 3)
Turn-off fall time (note 3)
tr
td(off)
tf
VDD=-4.5V,VGS=-10V,
ID=-215mA,RGEN=10
Total Gate Charge(note 3)
Gate Source Charge(note 3)
Gate Drain Charge(note 3)
Qg
Qgs VDS=-10V,VGS=-4.5V,ID=-215mA
Qgd
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300μs, duty cycle2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Graranted by designnot subject to producting.
Min
-20
-0.4
Typ Max
-0.45
0.45
0.55
0.72
1
-1
±2
-1
0.7
1
1.2
-1.2
105 175
15 30
10 20
10
12
35
19
1.7 2.5
0.3
0.4
Unit
V
µA
uA
V
S
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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2
B,Sep,2015



JCET CJX3152P
7\SLFDO&KDUDFWHULVWLFV
-3.0
Ta=25
-2.5 Pulsed
Output Characteristics
VGS=-4V,-5V
VGS=-3V
-2.0 VGS=-2.5V
-1.5 VGS=-2V
-1.0
VGS=-1.5V
-0.5
-0.0
-0
-1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE VDS (V)
-5
-2.5
VDS=-3V
Pulsed
-2.0
-1.5
Transfer Characteristics
Ta=25
Ta=100
-1.0
-0.5
-0.0
-0
-1 -2 -3
GATE TO SOURCE VOLTAGE VGS (V)
-4
1200
1100
Ta=25
Pulsed
1000
900
RDS(ON) —— ID
VGS=-1.8V
800
700
VGS=-2.5V
600
500
400 VGS=-4.5V
300
-0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2
DRAIN CURRENT ID (A)
1000
900
800
700
600
500
400
300
-1
RDS(ON) —— VGS
ID=-1A
Pulsed
Ta=100
Ta=25
-2 -3 -4
GATE TO SOURCE VOLTAGE VGS (V)
-5
-2
Pulsed
-1
IS —— VSD
-0.8
-0.6
-0.1
Ta=100
Ta=25
-0.4
-0.2
-0.01
-0.0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
-1.4
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3
-0.0
25
Threshold Voltage
ID=-250uA
50 75 100
JUNCTION TEMPERATURE TJ ()
125
B,Sep,2015







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