Random-Access Memory. CDP1823C Datasheet

CDP1823C Memory. Datasheet pdf. Equivalent


GE CDP1823C
Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDP1823, CDP1823C
BLlS 0
eus I
2.
23
BUS 2
22
BUS 3
21
BuS 4
5
BUS 5- 6
20
19
BUS 6
8US 7
7
8
18
17
CSI 9 16
CS2
10
"c.53
V55 12
15
1" 3
TOP VIEW
VDD
MAO
MAl
MA2
MA3
MA'
MA5
MAS
MWR
-Mmi
ess
C54
TERMINAL ASSIGNMENT
128-Word X 8-Bit Static
Random-Access Memory
Features:
• Fast access time:
450 ns at Voo= 5 V;
250 ns at Voo = 10 V
• Common data inputs and outputs
• Multiple-chip select inputs to simplify
memory system expansion
The RCA-CDP1823 and CDP1823C are 128-word by 8-bit
CMOS SOS static random-access memories. These mem-
ories are compatible with general-purpose microprocessors.
The two memories are functionally identical. They differ in
that the CDP1823 has a recommended operating voltage
range of 4 to 10.5 volts, and the CDP1823C has a
recommended operating voltage range of 4 to 6.5 volts.
The CDP1823 memory has 8 common data input and data
output terminals for direct connection to a bidirectional
data bus and is operated from a single voltage supply. Five
chip-select inputs are provided to simplify memory-system
expansion. In order to enable the CDP1823, the chip-select
inputs CS2, ~, and CS5 require a low input signal, and
the chip-select inputs CS1 and CS4 require a high input
signal.
The MRD signal enables all 8 output drivers when in the low
state and should be in a high state during a write cycle.
Aftervalid data appear althe output, the address inputs may
be changed immediately. Output data will be valid until
either theMtm signal goes high, the device is deselected, or
tM (access time) after address changes.
The CDP1823 and CDP1823C are supplied in hermetic 24-
lead dual-in-line ceramic packages (D suffix), and in 24-
lead dual-in-line plastic packages (E suffix).
OPERATIONAL MODES
Function
READ
WRITE
STAND-BY (ACTIVE)
NOT
SELECTED
MAD MWR CS1 CS2 CS3 CS4 CS5 Bus Terminal State
Storage State of
0 X 1 0 0 1 0 Addressed Word
1 0 1 0 0 1 0 Input High-Impedance
1 1 1 0 0 1 0 High-Impedance
XX0 XXXX
XXX 1 XXX
X X X X 1 X X High-Impedance
XXXXX0 X
XXXXXX 1
Logic 1 = High Legic 0 = Low X = Don't Care
File Number 1198
660 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __


CDP1823C Datasheet
Recommendation CDP1823C Datasheet
Part CDP1823C
Description 128-Word x 8-Bit Static Random-Access Memory
Feature CDP1823C; Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ CDP1823, CDP1823C BLlS 0 eu.
Manufacture GE
Datasheet
Download CDP1823C Datasheet




GE CDP1823C
_________________________ Random-Access Memories (RAMs)
CDP1823, CDP1823C
OPERATING CONDITIONS at TA = FULL PACKAGE-TEMPERATURE RANGE
For maximum reliability, nominal operating conditions should be
selected so that operation is always within the following ranges:
CHARACTERISTIC
Supply·Voltage Range
LIMITS
CDP1823D
CDP1823CD
Min.
Max.
Min.
Max.
4 10.5 4
6.5
UNITS
V
Recommended Input Voltage Range
VSS
VDD
VSS
VDD
V
MAXIMUM RATINGS, Absolute·Maximum Values:
DC SUPPLY·VOLTAGE RANGE, (VDD)
(All voltage values referenced to VSS terminal)
CDP1823 ............................................................. -0.5to +11 V
CDP1823C ............................................................. -0.5to +7V
INPUT VOLTAGE RANGE, ALL INPUTS ................................... -0.5to VDD+ 0.5 V
DCINPUTCURRENT,ANYONEINPUT ............................................. ±10mA
OPERATING·TEMPERATURE RANGE (TA):
CERAMIC PACKAGES (D SUFFIX TYPES) ................................... - 55 to + 125·C
PLASTIC PACKAGES (E SUFFIX TYPES) ..................................... - 40 to + 85·C
STORAGETEMPERATURERANGE(Tstg) ..................................... -65to +150·C
LEAD TEMPERATURE (DURING SOLDERING):
At distance 1/16 ± 1/32 inch (1.59 ± 0.79 mm) from case for 10 s max.................... + 265·C
STATIC ELECTRICAL CHARACTERISTICS at T. = -40 to + 85°C, Except as noted
TEST
CONDITIONS
LIMITS
CHARACTERISTICS
Vo V,N Voo
CDP1823
CDP1823C UNITS
(V) (V) (V) Min. Typ.· Max. Min. Typ.* MIx.
- -Quiescent Device -
0,5 5 - - 500
- 500
Current,
- - -100 0.10 10 -
1000 - -
Output Voltage:
- 0,5 5 -
-0 0.1
0 0.1
Low-Level.
- -VOL 0,10 10
0 0.1 - -
-
High-Level,
-VOH 0,5 5 4.9 5
- 4.9 5 -
- 0,10 10 9.9 10 -
--
-
- - - -Input Low Voltage. V,L 0.5,4.5
5
1.5 - 1.5
0.5,9.5 - 10 -
-
3-- -
Input High Voltage, V,H 0.5,4.5 -
5 3.5 -
- -3.5 -
-0.5,9.5 - 10 7
- - --
Output Low (Sink)
- -0.4 0,5 5 2 4
24
Current,
-10L 0.5 0,10 10 4.5 9 - - -
- -Output High (Source) 4.6 0,5 5 -1 -2
-1 -2.
Current,
10H 9.5 0,10 10 -2.2 -4.4 -
--
-
Input Current,
ioN Any 0,5 5
- ±5 - - ±5
- - - -Input 0,10 10
±10 -
3-State Output
- -0,5 0,5 5 - - ±5
±5
Leakage Current, lOUT 0,10 0,10 10 -
- -±10 - -
- -Operating Current,loo,t
0,5 5
4 8- 4 8
- -0,10 10 - 8 16 - -
Input Capacitance, C'N -
---
-5 7.5
5 7.5
pA
V
mA
pAl
mA
pF
Output Capacitance,
-COUT
---
10 15 - 10 15
tOutputs open cIrcuIted; cycle lIme = 1 fJs.
'Typical values are for T. = 25' C and nominal Voo.
______________________________________________________________ 661



GE CDP1823C
Random-Acce.. Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
CDP1823, CDP1823C
DYNAMIC ELECTRICAL CHARACTERISTICS at TA = - 40 to + 85 'C, VDD ± 5%,
= =tr,tl 20 n8, CL 100 pF.
CHARACTERISTIC
VDD
LIMITS
(V) CDP1823 I CDP1823C UNITS
Mln.t Typ.· Max. Min.t Typ.· Max.
Read Cycle (See Fig. 1)
Access Time From
-5 275
Address Change, tAA
-10 150
Access Time From
Chip Select, t DOA
-5 150
-10 100
MRD to Output
5 - 150
Active, tAM
Data Hold Time ,
-10 100
5 25 50
. =After Read, t DOH
10 15 25
Typical values are at TA 25'C and nominal voltage.
450
250
250
150
250
150
75
40
- 275 450
---
- 150 250
---
- 150 250
---
25 50 75
---
tTlme required by a limit device to allow for the Indicated function.
ns
ADDRESS
f------·AA
r---'AM -
X
\
CSI,CS4
i---' DOA
DATA (jUT
H.GH IMPEDANCE
,\\
VALID DATA
- 'DOH.I--
"DSO %
--rIO %
NOTE ,!!VIA IS HIGH DURING READ OPERATION.
TIMING MEASUREMENT REFERENCE IS O.~VDO·
Fig. 1 - Read cycle timing diagram.
92CM-31942RI
662 ____________________________________________________________





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