STATIC RAMI. UPD2147-3 Datasheet
NEe Microcomputers, Inc.
4096 x 1 BIT STATIC RAMI
The IlPD2147 is a 4096-bit static Random Access Memory organized as 4096 words by
1-bit. Using a scaled NMOS technology, it incorporates an innovative design approach
which provides the ease-of-use features associated with non-clocked static memories
and the reduced standby power dissipation associated with clocked static memories.
The result is low standby power dissipation without the need for clocks, address setup
and hold times. In addition, data rates are not reduced due to cycle times that are
longer than access times.
CS controls the power down feature. In less than a cycle time after CS goes high -
deselecting the IlPD2147 - the part automatically reduces its power requireme"ts and
remains in this lower power standby mode as long as CS remains high. This del/ice
feature results in system power savings as great as 85"10 in larger systems, where the
majority of devices are deselected.
The IlPD2147 is placed in an 18-pin ceramic package configured with the industry
standard pinout. It is directly TTL compatible in all respects: inputs, outputs, and a
single +5V supply. The data is read out non-destructively and has the same polarity
as the input data. A data input and a separate three-state output are used.
• Scaled NMOS Technology
• Completely Static Memory - No Clock or Timing Strobe Required
• Equal Access and Cycle Times
• Single +5V Supply
• Automatic Power-Down
• High Density 18-Pin Package
• Directly TTL Compatible - All Inputs and Outputs
• Separate Data Input and Output
• Th ree-State Output
• Available in a Standard 18-Pin Ceramic Package
• 2 Performance Ranges:
H X Not Selected High Z
L L Write
L H Read
Operating Temperature ...
Storage Temperature .
Voltage on Any Pin ..
<D-3.5V to +7 Volts
DC Output Current ..
Power Dissipation ...
<DNote: with respect to ground
. ........... 1.2W
COMMENT: Stress above those listed under"Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device
*Ta = 25°C
<DTa = oOe to +70°C; vee = +5V t 10%, unless otherwise noted.
SYMBOL MIN TYP® MAX UNIT
I'A Vee = Max. VIN = GND to
I'A es = VIH. Vee = Max,
IVOUT = GND to Vee
mA Ta = 25'e Vee = Max,
Ies = VIL,
mA Ta = 0° C Outputs Open
mA Vee = Min to Max,
es = VIH
25 50 mA Vee = GND to Vee = Min,
CS = Lower of Vee or
0.4 V 10L =8mA
V 10H = -4.0 mA
+150 mA VOUT = GND to Vee
Notes: (j) The operating ambient temper~ture range is guaranteed with transverse air flow exceeding 400 linear feet per
® Typical limits are Vec • 5V, Te .. +2SoC, and specified loading.
@ ICC exceeds 19B maximum during power on. A pull-up resistor to Vee on the es input Is required to keep the
device deselected: otherwise, power-on current approaches ICC active.
I ISYMBOL MIN TVP MAX UNIT TEST CONDITIONS
Input Capacitance C'N
I I 5 pF
Output Capacitance CaUT
I I 6 pF
Note: CD This parameter is sampled and not 100% tested.
AC TEST CONDITIONS
Input Pulse Levels . . . . . . . . . . . . . . . . .
Input Rise and Fall Times . . . . . . . . . . . .
Input and Output Timing Reference Levels
Output Load . . . . . . . . . . . . . . . . . . . . ..
. Gnd to 3.0 Volts
.. ...... 5ns
.... 1.5 Volts
. . See Figure 1
T =0 Cto+70 C;V
Read Cycle Time
Address Access Time
Output Hold From
Chip Select to
Output in Low Z
Chip Deselection to
Output in High Z
Chip Selection to
Chip Selection to
"" +5V ± 10% unless otherwise noted.
SVMBOL MIN MAX MIN MAX
UNIT TEST CONDITIONS
45 55 70 ns
45 55 10 ns
45 55 70 ns
tHZ~ 0 30 0 30 0 40 ns
tpu 0 0 0 ns
tpD 20 20 30 ns
(INCLUDING SCOPE AND JIG)
All Read Cycle timings are referenced from the last valid address to the first transi·
® At any given temperature and voltage condition, tHZ max is less than tLZ min. both
for a given device and from device to device.
® Transition is measured ±200 mV from steady state voltage with specified loading.
@) Transition is measured at VOL +200 mV and VOH -200 mV with specified loading,