STATIC RAMI. UPD2147-3 Datasheet

UPD2147-3 RAMI. Datasheet pdf. Equivalent


NEC UPD2147-3
NEe Microcomputers, Inc.
4096 x 1 BIT STATIC RAMI
NEe
J.L PD2147-2
p.PD2147-3
J.L PD2147-5
FEATURES
The IlPD2147 is a 4096-bit static Random Access Memory organized as 4096 words by
1-bit. Using a scaled NMOS technology, it incorporates an innovative design approach
which provides the ease-of-use features associated with non-clocked static memories
and the reduced standby power dissipation associated with clocked static memories.
The result is low standby power dissipation without the need for clocks, address setup
and hold times. In addition, data rates are not reduced due to cycle times that are
longer than access times.
CS controls the power down feature. In less than a cycle time after CS goes high -
deselecting the IlPD2147 - the part automatically reduces its power requireme"ts and
remains in this lower power standby mode as long as CS remains high. This del/ice
feature results in system power savings as great as 85"10 in larger systems, where the
majority of devices are deselected.
The IlPD2147 is placed in an 18-pin ceramic package configured with the industry
standard pinout. It is directly TTL compatible in all respects: inputs, outputs, and a
single +5V supply. The data is read out non-destructively and has the same polarity
as the input data. A data input and a separate three-state output are used.
Scaled NMOS Technology
• Completely Static Memory - No Clock or Timing Strobe Required
• Equal Access and Cycle Times
• Single +5V Supply
• Automatic Power-Down
• High Density 18-Pin Package
• Directly TTL Compatible - All Inputs and Outputs
• Separate Data Input and Output
• Th ree-State Output
• Available in a Standard 18-Pin Ceramic Package
• 2 Performance Ranges:
II
I'PD2l47-2
I'PD2l47-3
I'PD2147-5
MAX
ACCESS TIME
70 ns
55 ns
45 ns
SUPPLY CURRENT
ACTIVE
STANDBY
160mA
20 mA
160 mA
20mA
leO mA
20 mA
PIN CONFIGURATION
AO
A,
A2
A3
A4
A5
DOUT
WE
GND
Vec
Ae
A7
AS
Ag
AlO
All
.DIN
CS
PIN NAMES
AO-All
WE
CS
DiN
DOUT
Vee
GND
Address Inputs
Write Enable
Chip Select
Data Input
Data- Output
~ower (+5V)
Ground
TRUTH TABLE
cs WE
MODE
OUTPUT
H X Not Selected High Z
L L Write
High Z
L H Read
DOUT
POWER
Standby
Active
Active
65


UPD2147-3 Datasheet
Recommendation UPD2147-3 Datasheet
Part UPD2147-3
Description 4096 x 1 BIT STATIC RAMI
Feature UPD2147-3; NEe Microcomputers, Inc. 4096 x 1 BIT STATIC RAMI NEe J.L PD2147-2 p.PD2147-3 J.L PD2147-5 FEATURE.
Manufacture NEC
Datasheet
Download UPD2147-3 Datasheet




NEC UPD2147-3
J-LPD2147
MEMORY ARRAY
64 ROWS
64 COLUMNS
BLOCK DIAGRAM
DOUT
WE-1-=~~------------------~
Operating Temperature ...
...... -10°Cto+85°C
Storage Temperature .
Voltage on Any Pin ..
.... -65°Cto+150°C
<D-3.5V to +7 Volts
DC Output Current ..
. 20mA
Power Dissipation ...
<DNote: with respect to ground
. ........... 1.2W
COMMENT: Stress above those listed under"Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability .
*Ta = 25°C
<DTa = oOe to +70°C; vee = +5V t 10%, unless otherwise noted.
LIMITS
PARAMETER
SYMBOL MIN TYP® MAX UNIT
TEST CONDITIONS
Input Load
Current (All
Input Pins)
III
0.01 10
I'A Vee = Max. VIN = GND to
Vee
Output Leakage
Current
IILOI
Operating Current
lee
Standby Current
ISB
0.01 10
120 150
160
12 20
I'A es = VIH. Vee = Max,
IVOUT = GND to Vee
mA Ta = 25'e Vee = Max,
Ies = VIL,
mA Ta = 0° C Outputs Open
mA Vee = Min to Max,
es = VIH
Peak Power-On
Current
IPO@
25 50 mA Vee = GND to Vee = Min,
CS = Lower of Vee or
VIHMin
Input Low
Voltage
VIL -3.0
0.8 V
Input High
Voltage
VIH 2.0
6.0 V
Output Low
Voltage
VOL
0.4 V 10L =8mA
Output High
Voltage
VOH
2.4
V 10H = -4.0 mA
Output Short
lOS ·150
Circuit Current
+150 mA VOUT = GND to Vee
Notes: (j) The operating ambient temper~ture range is guaranteed with transverse air flow exceeding 400 linear feet per
minute.
® Typical limits are Vec • 5V, Te .. +2SoC, and specified loading.
@ ICC exceeds 19B maximum during power on. A pull-up resistor to Vee on the es input Is required to keep the
device deselected: otherwise, power-on current approaches ICC active.
ABSOLUTE MAXIMUM
RATINGS*
DC CHARACTERISTICS
66



NEC UPD2147-3
CAPACITANCE
PARAMETER
ttMITS
I ISYMBOL MIN TVP MAX UNIT TEST CONDITIONS
Input Capacitance C'N
I I 5 pF
VIN=OV
Output Capacitance CaUT
I I 6 pF
VOUT~ OV
Note: CD This parameter is sampled and not 100% tested.
f'PD2147
AC TEST CONDITIONS
Input Pulse Levels . . . . . . . . . . . . . . . . .
Input Rise and Fall Times . . . . . . . . . . . .
Input and Output Timing Reference Levels
Output Load . . . . . . . . . . . . . . . . . . . . ..
. Gnd to 3.0 Volts
.. ...... 5ns
.... 1.5 Volts
. . See Figure 1
AC CHARACTERISTICS
READ CYCLE
T =0 Cto+70 C;V
PARAMETER
Read Cycle Time
Address Access Time
Chip Select
Access Time
Chip Select
Access Time
Output Hold From
Address Change
Chip Select to
Output in Low Z
Chip Deselection to
Output in High Z
Chip Selection to
Power-Up Time
Chip Selection to
Power-Down Time
"" +5V ± 10% unless otherwise noted.
LIMITS
PD2147·5
~PD2147·3
SVMBOL MIN MAX MIN MAX
jJP02147·2
MIN MAX
UNIT TEST CONDITIONS
tRcID
45
55
10
ns
tAA
45 55 70 ns
tACS1
45 55 10 ns
tACS2
45 55 70 ns
tOH
5
5
5
ns
tcz~
10
10
10
ns
tHZ~ 0 30 0 30 0 40 ns
~
@
tpu 0 0 0 ns
tpD 20 20 30 ns
II
Vcc
510n
°OUT -----1~-------t
300n
=r= 30pF
(INCLUDING SCOPE AND JIG)
Figure 1
CDNotes:
All Read Cycle timings are referenced from the last valid address to the first transi·
tioning address.
® At any given temperature and voltage condition, tHZ max is less than tLZ min. both
for a given device and from device to device.
® Transition is measured ±200 mV from steady state voltage with specified loading.
@) Transition is measured at VOL +200 mV and VOH -200 mV with specified loading,
67







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