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MTE2D4N06E3

N-Channel Enhancement Mode Power MOSFET

Description

CYStech Electronics Corp. Spec. No. : C933E3 Issued Date : 2013.03.20 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE2D4N06E3 BVDSS ID @VGS=10V RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 60V 120A 2.6mΩ 2.8mΩ Features Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Symbol MTE2D4N...

Cystech Electonics

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