NSBC144EDXV6 Resistor Transistors Datasheet

NSBC144EDXV6 Datasheet, PDF, Equivalent


Part Number

NSBC144EDXV6

Description

Dual NPN Bias Resistor Transistors

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download NSBC144EDXV6 Datasheet


NSBC144EDXV6
MUN5213DW1,
NSBC144EDXV6,
NSBC144EDP6
Dual NPN Bias Resistor
Transistors
R1 = 47 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
MUN5213DW1T1G,
SMUN5213DW1T1G*
SOT−363
3,000 / Tape & Reel
MUN5213DW1T3G,
NSVMUN5213DW1T3G*
SOT−363
10,000 / Tape & Reel
NSBC144EDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBC144EDXV6T5G
SOT−563
8,000 / Tape & Reel
NSBC144EDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
7C M G
G
1
SOT−563
CASE 463A
7C M G
G
1
SOT−963
CASE 527AD
DMG
G
1
7C/D
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Publication Order Number:
DTC144ED/D

NSBC144EDXV6
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5213DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5213DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC144EDXV6 (SOT−563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC144EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBC144EDP6 (SOT−963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBC144EDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
357
2.9
350
500
4.0
250
−55 to +150
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
−55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MW
mW/°C
°C/W
MW
mW/°C
°C/W
°C
http://onsemi.com
2


Features MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 D ual NPN Bias Resistor Transistors R1 = 47 kW, R2 = 47 kW NPN Transistors with Monolithic Bias Resistor Network This s eries of digital transistors is designe d to replace a single device and its ex ternal resistor bias network. The Bias Resistor Transistor (BRT) contains a si ngle transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these ind ividual components by integrating them into a single device. The use of a BRT can reduce both system cost and board s pace. Features • Simplifies Circuit D esign • Reduces Board Space • Reduc es Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang e Requirements; AEC-Q101 Qualified and PPAP Capable* • These Devices are Pb- Free, Halogen Free/BFR Free and are RoH S Compliant MAXIMUM RATINGS (TA = 25° C, common for Q1 and Q2, unless otherwise noted) Rating Symbo.
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