2N6193 Silicon Transistor Datasheet

2N6193 Datasheet, PDF, Equivalent


Part Number

2N6193

Description

PNP Power Silicon Transistor

Manufacture

MA-COM

Total Page 4 Pages
Datasheet
Download 2N6193 Datasheet


2N6193
2N6193
PNP Power Silicon Transistor
Features
JAN, JANTX, JANTXV, JANS, and JANSR 100K
rads (si) per MIL-PRF-19500/561
TO-39 (TO-205AD) Package
Rev. V1
Electrical Characteristics
Parameter
Test Conditions
Symbol Units
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
IC = 50 mAdc
VCE = 100 Vdc
VCE = 90 Vdc, VBE = 1.5 Vdc
V(BR)CEO Vdc
ICEO
ICEX
µAdc
Collector - Base Cutoff Current
VCB = 100 Vdc
ICBO µAdc
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Saturation Voltage
Dynamic Characteristics
VEB = 6.0 Vdc
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
IEBO µAdc
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10.0 Vdc, f = 10 mHz
| HFE |
-
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
Input Capacitance
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Safe Operating Area
VBE = 2 Vdc, IC = 0, 100 kHz ≤ f ≤ 1 MHz
VCC = -40 Vdc; VBE(OFF) = 2.3 Vdc
IC = 2.0 Adc, IB1 = 0.2 Adc
VCC = -40 Vdc; IC = 2.0 Adc
IB1 = -IB2 = 0.2 Adc
DC Tests:
Test 1:
Test 2:
TC = +25°C, I Cycle, t ≥ 0.5 s
VCE = 2 Vdc, IC = 5 Adc
VCE = 90 Vdc, IC = 55 mAdc
CIBO
TD
TR
TS
TF
pF
ns
ns
µs
ns
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
Min.
100
60
60
40
3
Max.
100
10
10
100
240
0.7
1.2
1.2
1.8
15
300
1250
100
100
2.0
200
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0013425

2N6193
2N6193
PNP Power Silicon Transistor
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 25°C
@ TC = 25°C
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TOP, TSTG
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
RθJC
Rev. V1
Value
100 Vdc
100 Vdc
6 Vdc
1 Adc
5 Adc
1.0 W
17.5 W
-65°C to +200°C
Max. Value
10°C/W
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0013425


Features 2N6193 PNP Power Silicon Transistor Feat ures  JAN, JANTX, JANTXV, JANS, and JANSR 100K rads (si) per MIL-PRF-19500/ 561  TO-39 (TO-205AD) Package Rev. V1 Electrical Characteristics Paramet er Test Conditions Symbol Units Off Characteristics Collector - Emitter Br eakdown Voltage Collector - Emitter Cut off Current IC = 50 mAdc VCE = 100 Vdc VCE = 90 Vdc, VBE = 1.5 Vdc V(BR)CEO Vdc ICEO ICEX µAdc Collector - Base Cutoff Current VCB = 100 Vdc ICBO µ Adc Emitter - Base Cutoff Current On C haracteristics1 Forward Current Transfe r Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Volta ge Dynamic Characteristics VEB = 6.0 V dc IC = 0.5 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 2.0 Vdc IC = 2.0 Adc, IB = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc IC = 2.0 Adc, I B = 0.2 Adc IC = 5.0 Adc, IB = 0.5 Adc IEBO µAdc HFE VCE(SAT) Vdc VBE(SAT) V dc Magnitude of Common Emitter Small-S ignal Short-Circuit Forward Current Transfer Ratio IC = 0.5 Ad.
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