Switching MOSFETs. CMB75N03 Datasheet

CMB75N03 MOSFETs. Datasheet pdf. Equivalent

CMB75N03 Datasheet
Recommendation CMB75N03 Datasheet
Part CMB75N03
Description N-Ch 30V Fast Switching MOSFETs
Feature CMB75N03; CMB75N03/CMP75N03/CMI75N03 N-Ch 30V Fast Switching MOSFETs General Description The 75N03 is N-ch M.
Manufacture Cmos
Datasheet
Download CMB75N03 Datasheet




Cmos CMB75N03
CMB75N03/CMP75N03/CMI75N03
N-Ch 30V Fast Switching MOSFETs
General Description
The 75N03 is N-ch MOSFETs
with extreme high cell density ,
which provide excellent RDSON
and gate charge for most of the
synchronous buck converter
applications.
Features
Simple Drive Requirement
Fast Switching
Low On-Resistance
Product Summery
BVDSS
30V
RDSON
6m
ID
75A
Applications
LED POWER CONTROLLER
DC-DC & DC-AC CONVERTERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
TO263 / TO220/TO262 Pin Configuration
Absolute Maximum Ratings
GD S
TO-263
(CMB75N03)
G
DS
TO-220
(CMP75N03)
G DS
TO-262
(CMI75N03)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
20
75
50
220
400
50
120
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-case
Typ.
---
---
Max.
62
1.5
Unit
/W
/W
1



Cmos CMB75N03
CMB75N03/CMP75N03/CMI75N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=40A
VGS=4.5V , ID=20A
Min.
30
---
---
---
Typ.
---
0.035
---
---
VGS=VDS , ID =250uA
1 ---
VDS=24V , VGS=0V
VDS=24V , VGS=0V , TC =125°C
VGS 20V , VDS=0V
VDS=10V , ID=40A
VDS=0V , VGS=0V , f=1MHz
ID=40A
VDS =24V
VGS = 5V
V DS =15V
ID=40A
R G=3.3 ,V GS =10V
R D=0.37
VDS=25V , VGS=0V , f=1MHz
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
50
---
---
---
---
9
100
37
60
1900
800
300
Max.
---
---
6
12
3
1
25
100
---
3.3
42
52
26
---
---
---
---
---
---
---
Unit
V
V/
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=75 A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
75
220
1.28
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=50A
4.The power dissipation is limited by 175 junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2







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