VECTOR MODULATOR. HMC630LP3 Datasheet

HMC630LP3 MODULATOR. Datasheet pdf. Equivalent

HMC630LP3 Datasheet
Recommendation HMC630LP3 Datasheet
Part HMC630LP3
Description GaAs HBT VECTOR MODULATOR
Feature HMC630LP3; v00.1007 10 Typical Applications The HMC630LP3(E) is ideal for: • Wireless Infrastructure HPA & MC.
Manufacture Analog Devices
Datasheet
Download HMC630LP3 Datasheet




Analog Devices HMC630LP3
v00.1007
10
Typical Applications
The HMC630LP3(E) is ideal for:
• Wireless Infrastructure HPA &
MCPA Error Correction
• Pre-Distortion or Feed-Forward Linearization
• Cellular / 3G Systems
• Beam Forming or RF Cancellation Circuits
Functional Diagram
HMC630LP3 / 630LP3E
GaAs HBT VECTOR
MODULATOR 700 - 1000 MHz
Features
Continuous Phase Control: 360°
Continuous Gain Control: 40 dB
Low Output Noise Floor: -162 dBm/Hz
High Input IP3: +34 dBm
16 Lead 3x3mm SMT Package: 9mm2
General Description
The HMC630LP3 & HMC630LP3E are high dynamic
range Vector Modulator RFICs which are targeted
for RF predistortion and feed-forward cancellation
circuits, as well as RF beam forming and amplitude/
phase correction circuits. The I & Q ports of the
HMC630LP3(E) can be used to continuously vary
the phase and amplitude of RF signals by up to 360
degrees and 40 dB respectively, while supporting a
3 dB modulation bandwidth of 180 MHz. With an out-
put IP3 of +24.5 dBm and output noise floor of -162
dBm/Hz (at maximum gain setting), the output IP3/
noise floor ratio is 186.5 dB.
10 - 50
Electrical Specifications, TA = +25° C, Vcc= +8V
Parameter
Min. Typ.
Frequency Range
0.7 - 1.0
Maximum Gain[1]
-12 -10
Gain Variation Over Temperature
0.02
Gain Flatness Across Any 60 MHz Bandwidth
0.10
Gain Range
40
Input Return Loss
15
Output Return Loss
17
Input Power for 1dB Compression (P1dB)
14 17
Input Third Order Intercept (IP3)
34
Output Noise
-162
Control Port Bandwidth (-3 dB)
180
Control Port Impedance
1.45k
Control Port Capacitance
0.22
Control Voltage Range
+0.5 to +2.5
Group Delay Variation Over 60 MHz Bandwidth
20
Supply Current (Icq)
92
Unless otherwise noted, measurements are made @ max. gain setting and 45˚ phase setting.
See application circuit for details.
[1]Includes loss of input balun (0.75 dB typ.).
Max.
0.03
Units
GHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm/Hz
MHz
Ohms
pF
Vdc
ps
mA
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Analog Devices HMC630LP3
HMC630* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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EVALUATION KITS
HMC630LP3 Evaluation Board
DOCUMENTATION
Data Sheet
HMC630 Data Sheet
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: 16L 3x3mm
QFN Package (QTR: 11003 REV: 02)
Package/Assembly Qualification Test Report: LP2, LP2C,
LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364)
Semiconductor Qualification Test Report: GaAs HBT-A
(QTR: 2013-00228)
DESIGN RESOURCES
HMC630 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC630 EngineerZone Discussions.
SAMPLE AND BUY
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TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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Analog Devices HMC630LP3
v00.1007
Maximum Gain vs. Temperature
0
-2
-4
-6
-8
-10
-12
-14 +25C
+85C
-16 -40C
-18
-20
0.6
0.7 0.8 0.9
FREQUENCY (GHz)
1
1.1
Gain vs. Phase Settings @ F= 900 MHz
0
-10
-20
-30
-40
-50
0
MAX
-5dB
-10dB
-20dB
45 90 135 180 225 270 315 360
PHASE SETTING (DEGREES)
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
+25C
+85C
-25 -40C
-30
-35
0.6
0.7 0.8 0.9
FREQUENCY (GHz)
1
1.1
HMC630LP3 / 630LP3E
GaAs HBT VECTOR
MODULATOR 700 - 1000 MHz
Maximum Gain vs. Supply Voltage
0
-2
-4
-6
-8
-10
-12
-14 7.6V
8.0V
-16 8.4V
-18
-20
0.6
0.7 0.8 0.9
FREQUENCY (GHz)
1
1.1
Phase vs. Phase Settings @ F= 900 MHz
vs. Various Gain Settings
360
315
270
225
180
135 MAX
-5dB
90
-10dB
-20dB
45
0
0 45 90 135 180 225 270 315 360
PHASE SETTING (DEGREES)
Output Return Loss vs. Temperature
0
-5
+25C
+85C
-10 -40C
-15
-20
-25
-30
-35
0.6
0.7 0.8 0.9
FREQUENCY (GHz)
1
1.1
10
Information furnishedFboyrApnarloicg eD,evdiceesliivs eberlyie,veadntodbetoacpcularatceeanod rrdelieabrlse.,Hpowleevaers, enocoFnotrapcrticHe,itdteitleiveMry,icarnodwtoavpelacCeoorrpdeorrsa: tAionanlo: g Devices, Inc.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimearedt2pdmlbi0ctyaraayAtAdiorneenalmspluooalrghtrkofDrsatoheamevrRreicwitetsoihsseueafsopeudrr.noidt,SpsepeCurretscyaehinfo,iycefnatophltriameoftinoer srnsretasfsnouopOyrberjipcenrdatcfdirvtt,ieentenogMotrecwrmhiAgnOaeehnnrtngss0ts.eo-1owflf8iAinpthn2aoeat4uelotngantPsotDotihecrwveooi.ctwhenNesowre. :.h9OPAi7hptntope8inlti-Teec2e:a.c5c7tih8oo0n1nm-o-3S3lo2u3g9p4y-p43Wo7ra0ty:F0,Pa•Phx.OoO:nr.de9B:e7o1r8x-o8n-902l1i0n05-e6A0,aN-NtA3woL3rwOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106
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