D-S MOSFET. CMU50P03 Datasheet

CMU50P03 MOSFET. Datasheet pdf. Equivalent

CMU50P03 Datasheet
Recommendation CMU50P03 Datasheet
Part CMU50P03
Description P-Channel 30-V (D-S) MOSFET
Feature CMU50P03; CMD50P03/CMU50P03 P-Channel 30-V (D-S) MOSFET General Description These miniature surface mount MO.
Manufacture Cmos
Datasheet
Download CMU50P03 Datasheet




Cmos CMU50P03
CMD50P03/CMU50P03
P-Channel 30-V (D-S) MOSFET
General Description
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on)and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers,PCMCIA
cards, cellular and cordless telephones.
Features
Advanced high cell density Trench technology
Fast switching speed
Lower On-resistance
100% EAS Guaranteed
Simple Drive Requirement
Absolute Maximum Ratings
Product Summery
BVDSS
-30V
RDSON
8mΩ
ID
-50A
Applications
DC-DC Converters
Desktop PCs
LED controller
TO252 / TO251 Pin Configuration
D
G
S
TO252
G DS
TO251
(CMD50P03)
(CMU50P03)
G
D
S
Symbol
VDS
VGS
ID@TC=25
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Pulsed Drain Current1
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-30
±20
-50
-150
115
-50
60
-55 to 175
-55 to 175
Units
V
V
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Junction-to-Ambient 2
Junction-to-Case (Drain)
Typ.
---
---
Max.
50
1.1
Unit
/W
/W
1



Cmos CMU50P03
CMD50P03/CMU50P03
Electrical Characteristics (TJ=25 , unless otherwise noted)
P-Channel 30-V (D-S) MOSFET
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance1
VGS(th)
IDSS
Gate Threshold Voltage
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-15A
VGS=VDS , ID =-250uA
VDS=-30V, VGS=0V , TJ=25
VDS=-30V, VGS=0V , TJ=125
VGS 20V , VDS=0V
VDS=-15V , ID=-20A
VDS=-24V , ID=-50A
VGS=0 to -10V
VDD=-15V, VGS=-10V, RG=3.5
ID=-50A
VDS=-25V, VGS=0V , f=1MHz
Min.
-30
---
---
-1
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
---
---
---
---
---
---
52
45
6.5
10
11
9
54
20
3900
750
500
Max.
---
8
12
-3
-1
-50
100
---
---
---
---
---
---
---
---
---
---
---
Unit
V
m
V
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage
Notes
1. Pulse test; pulse width≤ 300μs, duty cycle≤ 2%.
2. When mounted on 1square PCB (FR-4 material).
Conditions
VG=VD=0V , Force Current
VGS=0V , IF=-30A
Min.
---
---
---
Typ.
---
---
---
Max.
-50
-150
-1.5
Unit
A
A
V
2







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