Effect Transistor. CMP1404 Datasheet

CMP1404 Transistor. Datasheet pdf. Equivalent

CMP1404 Datasheet
Recommendation CMP1404 Datasheet
Part CMP1404
Description N-Channel Enhancement Mode Field Effect Transistor
Feature CMP1404; CMP1404 / CMB1404 N-Channel Enhancement Mode Field Effect Transistor General Description Product .
Manufacture Cmos
Datasheet
Download CMP1404 Datasheet




Cmos CMP1404
CMP1404 / CMB1404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 1404 is a N-channel Power MOSFET.
It has specifically been designed to minimize
input capacitance and gate charge. The
BVDSS
40V
RDSON
5.5m
device is therefore suitable in advanced
Applications
high-efficiency switching applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Absolute Maximum Ratings
LED power controller
DC-DC & DC-AC converters
High current, High speed switching
Solenoid and relay drivers
Motor control, Audio amplifiers
TO220 / TO263 Pin Configuration
G
DS
TO-220
(CMP1404)
GD S
TO-263
(CMB1404)
ID
140A
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Single Pulse Avalanche Energy(Thermally limited) 2
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
20
140
99
420
240
200
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient 3
Thermal Resistance Junction-case
Typ.
---
---
Max.
62
1.05
Unit
/W
/W
1



Cmos CMP1404
CMP1404 / CMB1404
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-Source Leakage Current
IGSS
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=75A
VGS=VDS , ID =250uA
4
VDS=Max rating, VGS=0V
VDS=Max rating , VGS=0V@125
VGS 20V , VDS=0V
ID = 75A
VDS =32V
VGS =10 V
4
V DS =20V
ID = 75A
R G=6.8Ω ,V GS =10V
4
VDS=25V , VGS=0V , f=1MHz
Min.
40
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.032
---
---
---
---
---
65
21
30
18
148
42
74
3200
680
415
Max.
---
---
5.5
4
20
250
100
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
uA
nA
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage
Conditions
Min.
VG=VD=0V , Force Current
---
---
VGS=0V , IS=75 A , TJ=25
4 ---
Typ.
---
---
---
Max.
75
420
1.3
Unit
A
A
V
Note :
1.Repetitive rating; pulse width limited by max. junction temperature.
2.Limited by TJmax, starting TJ = 25°C, L = 0.04mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value.
3.This is only applied to TO-220AB pakcage.
4.Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2







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