Power Amplifier. HMC930A Datasheet

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HMC930A Datasheet
Recommendation HMC930A Datasheet
Part HMC930A
Description 0.25 W Power Amplifier
Feature HMC930A; Data Sheet GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz HMC930A FEATURES High output po.
Manufacture Analog Devices
Datasheet
Download HMC930A Datasheet




Analog Devices HMC930A
Data Sheet
GaAs, pHEMT, MMIC,
0.25 W Power Amplifier, DC to 40 GHz
HMC930A
FEATURES
High output power for 1 dB compression (P1dB): 22 dBm
High saturated output power (PSAT): 24 dBm
High gain: 13 dB
High output third-order intercept (IP3): 33.5 dBm
Supply voltage: 10 V at 175 mA
50 Ω matched input/output
Die size: 2.82 mm × 1.50 mm × 0.1 mm
APPLICATIONS
Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics
GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (GaAs), pseudomorphic,
high electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), distributed power amplifier that
operates from dc to 40 GHz. The HMC930A provides 13 dB of
gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB
gain compression, requiring 175 mA from a 10 V supply. The
HMC930A exhibits a slightly positive gain slope from 8 GHz to
FUNCTIONAL BLOCK DIAGRAM
34
HMC930A
2 VGG2
1 RFIN
RFOUT/VDD 5
VGG1 8
Figure 1.
76
32 GHz, making it ideal for electronic warfare (EW), electronic
countermeasures (ECM), radar, and test equipment
applications. The HMC930A amplifier inputs/outputs (I/Os) are
internally matched to 50 Ω, facilitating integration into multichip
modules (MCMs). All data is taken with the chip connected via
two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm
(12 mils).
Rev. 0
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Analog Devices HMC930A
HMC930A
TABLE OF CONTENTS
Features .............................................................................................. 1 
Applications....................................................................................... 1 
Functional Block Diagram .............................................................. 1 
General Description ......................................................................... 1 
Revision History ............................................................................... 2 
Electrical Specifications ................................................................... 3 
DC to 12 GHz Frequency Range................................................ 3 
12 GHz to 32 GHz Frequency Range......................................... 3 
32 GHz to 40 GHz Frequency Range......................................... 4 
Total Supply Current by VDD....................................................... 4 
Absolute Maximum Ratings............................................................ 5 
ESD Caution.................................................................................. 5 
REVISION HISTORY
12/15—Revision 0: Initial Version
Data Sheet
Pin Configuration and Function Descriptions..............................6 
Interface Schematics .....................................................................7 
Typical Performance Characteristics ..............................................8 
Theory of Operation ...................................................................... 13 
Applications Information .............................................................. 14 
Biasing Procedures..................................................................... 14 
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs......................................................................................... 15 
Outline Dimensions ....................................................................... 16 
Die Packaging Information....................................................... 16 
Ordering Guide............................................................................... 16 
Rev. 0 | Page 2 of 16



Analog Devices HMC930A
Data Sheet
HMC930A
ELECTRICAL SPECIFICATIONS
DC TO 12 GHz FREQUENCY RANGE
TA = 25°C, VDD = 10 V, VGG2 = 3.5 V, IDD = 175 mA. Adjust VGG1 between −2 V to 0 V to achieve IDD = 175 mA, typical.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Flatness
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Symbol Test Conditions/Comments
P1dB
PSAT
IP3
IDD
VDD = 10 V, VGG1 = −0.8 V, typical
Min Typ Max Unit
DC 12 GHz
11.5 13.5
dB
±0.5 dB
0.01 dB/°C
18 dB
28 dB
21 23
25
36
4.5
175
dBm
dBm
dBm
dB
mA
12 GHz TO 32 GHz FREQUENCY RANGE
TA = 25°C, VDD = 10 V, VGG2 = 3.5 V, IDD = 175 mA. Adjust VGG1 between −2 V to 0 V to achieve IDD = 175 mA, typical.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Gain Flatness
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Symbol Test Conditions/Comments
P1dB
PSAT
IP3
IDD
VDD = 10 V, VGG1 = −0.8 V, typical
Min Typ Max
12 32
11 13
±0.3
0.017
16
20
22
24
33.5
5
175
Unit
GHz
dB
dB
dB/°C
dB
dB
dBm
dBm
dBm
dB
mA
Rev. 0 | Page 3 of 16







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