NOISE AMPLIFIER. HMC617LP3 Datasheet

HMC617LP3 AMPLIFIER. Datasheet pdf. Equivalent

HMC617LP3 Datasheet
Recommendation HMC617LP3 Datasheet
Part HMC617LP3
Description GaAs SMT PHEMT LOW NOISE AMPLIFIER
Feature HMC617LP3; Amplifiers - Low Noise - SMT 7 7-1 HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFI.
Manufacture Analog Devices
Datasheet
Download HMC617LP3 Datasheet




Analog Devices HMC617LP3
7
7-1
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Typical Applications
The HMC617LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Features
Noise Figure: 0.5 dB
Gain: 16 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
Functional Diagram
General Description
The HMC617LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
16 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC617LP3(E) shares the same package and
pinout with the HMC618LP3(E) 1.7 - 2.2 GHz LNA.
The HMC617LP3(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC617LP3(E) offers improved noise figure versus
the previously released HMC372LP3(E) and the
HMC376LP3(E).
Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Vdd = +3 Vdc
Min. Typ. Max. Min. Typ. Max.
698 - 960
550 - 1200
13 16
11 15
0.003
0.003
0.5 0.8
0.5 1.1
28 22
12 14
14 16
12.5 16
17
31
30 45
16.5
30
30
45
Vdd = +5 Vdc
Min. Typ. Max. Min. Typ. Max.
698 - 960
550 - 1200
13.5 16
11.5 16
0.005
0.005
0.55 0.85
0.6 1.1
22 17
12 15
Units
MHz
dB
dB/ °C
dB
dB
dB
18.5 21
16.5 20
dBm
21
37
88 115
20.5
dBm
37 dBm
88 115 mA
* Rbias resistor sets current, see application circuit herein
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Analog Devices HMC617LP3
HMC617* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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EVALUATION KITS
HMC617LP3 Evaluation Board
DOCUMENTATION
Data Sheet
HMC617 Data Sheet
TOOLS AND SIMULATIONS
HMC617 S-Parameter
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: 16L 3x3mm
QFN Package (QTR: 11003 REV: 02)
Package/Assembly Qualification Test Report: LP2, LP2C,
LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364)
Semiconductor Qualification Test Report: PHEMT-D (QTR:
2013-00254)
DESIGN RESOURCES
HMC617 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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SAMPLE AND BUY
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TECHNICAL SUPPORT
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number.
DOCUMENT FEEDBACK
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Analog Devices HMC617LP3
v02.0610
Broadband Gain & Return Loss [1] [2]
25
20 S21
15
10
5 Vdd=5V
0 Vdd=3V
-5 S22
-10
-15
-20 S11
-25
-30
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FREQUENCY (GHz)
2
HMC617LP3 / 617LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Gain vs. Temperature [1]
22
20
18
+25C
+85C
- 40C
16
14
12
10
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
7
Gain vs. Temperature [2]
22
20
18
+25C
+85C
- 40C
16
14
12
10
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-5
+25 C
-10 +85 C
- 40 C
-15
-20
-25
-30
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
Output Return Loss vs. Temperature [1]
0
-5
-10
-15
-20
+25 C
+85 C
- 40 C
-25
-30
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-5
-10
+25 C
+85 C
-40 C
-15
-20
-25
-30
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K
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7-2







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