BIPOLAR TRANSISTOR. 50G60SW Datasheet

50G60SW TRANSISTOR. Datasheet pdf. Equivalent

50G60SW Datasheet
Recommendation 50G60SW Datasheet
Part 50G60SW
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Feature 50G60SW; Advanced Power Electronics Corp. AP50G60SW RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR .
Manufacture Advanced Power Electronics
Datasheet
Download 50G60SW Datasheet




Advanced Power Electronics 50G60SW
Advanced Power
Electronics Corp.
AP50G60SW
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
High Speed Switching
Low Saturation Voltage
VCE(sat),Typ.=2.6V@IC=33A
Built-in Fast Recovery Diode
G
C
E
C VCES
IC
TO-3P
G
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25oC
IC@TC=100oC
ICM
IF@TC=25oC
IF@TC=100oC
PD@TC=25oC
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Rating
600
+30
75
45
150
40
15
300
-55 to 150
150
300
600V
45A
C
E
Units
V
V
A
A
A
A
A
W
oC
oC
oC
Notes:
1.Repetitive rating : Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VCES
IGES
ICES
VCE(sat)
Collect-to-Emitter Breakdown Voltage
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
VGE=0V, IC=500uA
VGE=+30V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=33A
VGE=15V, IC=50A
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
VCE=VGE, IC=250uA
IC=33A
VCE=400V
VGE=15V
VCE=390V,
Ic=33A,
VGE=15V,
RG=5,
Inductive Load
Eoff Turn-Off Switching Loss
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
VGE=0V
VCE=30V
f=1.0MHz
VF FRD Forward Voltage
trr FRD Reverse Recovery Time
Qrr FRD Reverse Recovery Charge
IF=15A
IF=15A
di/dt = 200 A/μs
Value
0.42
1.5
40
Units
oC/W
oC/W
oC/W
Min. Typ. Max. Units
600 - - V
- - +100 nA
- - 500 uA
- 2.6 3
V
- 3.1 3.5 V
2 - 6V
- 55 100 nC
- 12 - nC
- 27 - nC
- 27 - ns
- 22 - ns
- 110 -
ns
- 100 260 ns
- 0.7 - mJ
- 1.2 - mJ
- 1250 2000 pF
- 235 -
pF
- 7 - pF
- 1.3 1.7 V
- 65 - ns
- 230 -
nC
Data and specifications subject to change without notice
1
201009033



Advanced Power Electronics 50G60SW
AP50G60SW
240
T C =25 o C
200
160
20V
18V
15V
120 12V
80 V GE =10V
40
0
0 10 20
V CE , Collector-Emitter Voltage (V)
30
Fig 1. Typical Output Characteristics
100
V GE =15V
80
T C =25 o C
60
T C =150 o C
40
20
0
0246
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
8
1.6
1.2
0.8
0.4
0
-50 0 50 100 150
Junction Temperature ( o C )
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
16
I C =33A
12 V CC =250V
V CC =300V
V CC =400V
8
4
0
0 10 20 30 40 50 60
Q G , Gate Charge (nC)
Fig 2. Gate Charge Characterisitics
5
V GE = 15 V
4
3
I C = 50 A
I C =33A
2
1
0 40 80 120 160
Junction Temperature ( o C)
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
3000
2000
1000
0
1
C ies
--
C oes
C res
5 9 13 17 21 25 29 33
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2



Advanced Power Electronics 50G60SW
400
300
200
100
0
0 50 100 150
Junction Temperature ( )
200
Fig 7. Power Dissipation vs. Junction
Temperature
20
T C =25 o C
15
I C = 50 A
33 A
15 A
10
5
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
20
20
16
T j =150 o C
T j =25 o C
12
8
4
0
0 0.4 0.8 1.2 1.6
V F , Forward Voltage (V)
Fig 11. Forward Characteristic of
Diode
2
AP50G60SW
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance, Junction-to-Case (IGBT)
20
T C = 150 o C
15
I C = 50 A
33 A
15 A
10
5
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
20
Fig 10. Saturation Voltage vs. VGE
1000
V GE =15V
T C =125 o C
100
10
--
Safe Operating Area
1
1 10 100
V CE ,Collector - Emitter Voltage(V)
Fig 12. SOA Characteristics
1000
3







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