Signal Conditioner. ZSSC5101 Datasheet

ZSSC5101 Conditioner. Datasheet pdf. Equivalent

ZSSC5101 Datasheet
Recommendation ZSSC5101 Datasheet
Part ZSSC5101
Description xMR Sensor Signal Conditioner
Feature ZSSC5101; xMR Sensor Signal Conditioner ZSSC5101 Datasheet Brief Description The ZSSC5101 is a CMOS integrat.
Manufacture IDT
Datasheet
Download ZSSC5101 Datasheet




IDT ZSSC5101
xMR Sensor Signal Conditioner
ZSSC5101
Datasheet
Brief Description
The ZSSC5101 is a CMOS integrated circuit for con-
verting sine and cosine signals obtained from
magnetoresistive bridge sensors into a ratiometric
analog voltage with a user-programmable range of
travel and clamping levels.
The ZSSC5101 accepts sensor bridge arrangements
for both rotational as well as linear movement.
Depending on the type of sensor bridge, a full-scale
travel range of up to 360 mechanical degrees can be
obtained.
Programming of the device is performed through the
output pin, allowing in-line programming of fully
assembled 3-wire sensors. Programming param-
eters are stored in an EEPROM and can be re-pro-
grammed multiple times.
The ZSSC5101 is fully automotive-qualified with an
ambient temperature range up to 160°C.
Features
Ratiometric analog output
Up to 4608 analog steps
Step size as small as 0.022°
Programming through output pin via
one-wire interface
Offset calibration of the bridge input signals
Programmable linear transfer characteristic:
Zero position
Angular range
Upper and lower clamping levels
Rising or falling slope
Loss of magnet indication with programmable
threshold level
Accepts anisotropic, giant, and tunnel magneto-
resistive bridge sensors (AMR, GMR and TMR)
Programmable 32-bit user ID
CRC, error detection, and error correction
on EEPROM data
Diagnostics: broken-wire detection
Automotive-qualified to AEC-Q100, grade 0
Benefits
No external trimming components required
PC-controlled configuration and single-pass
calibration via one-wire interface allows
programming of fully assembled sensors
Can be used with low-cost ferrite magnets
Allows large air gaps between sensors and
magnets
Optimized for automotive environments with
extended temperature range and special
protection circuitry with excellent electro-
magnetic compatibility
Power supply monitoring
Sensor monitoring
Detection of EEPROM memory failure
Connection failure management
High accuracy: ± 0.15° integral nonlinearity (INL)
after calibration
Available Support
Evaluation Kit
Application Notes
Physical Characteristics
Wide operation temperature: -40 C to +160 C (die)
Supply voltage: 4.5V to 5.5V
SSOP-14 package, bare die, or unsawn wafer
ZSSC5101 Typical Application Circuit
Sensor Bridges
VDDS
VSINP
VSINN
VCOSP
VCOSN
CB
100nF
VDDE
VOUT
VSSE
+5V
Load
Circuit
Rout
Cout
VSSS
© 2016 Integrated Device Technology, Inc.
1
January 22, 2016



IDT ZSSC5101
xMR Sensor Signal Conditioner
ZSSC5101
Datasheet
ZSSC5101 Block Diagram
Sin
VDDS
VSSS
VDDE
VDDS
VSSS
Power Supply Regulators
Cos
VDDS
VSSS
VSINP
VSINN
VCOSP
VCOSN
VSSE
MUX PGA ADC
Analog Frontend AFE
Digital Signal Processing and Control
EEPROM
One-Wire
Interface
Cordic
Algorithm
DAC
Interface
Buffer
Amp.
VOUT
Applications
Absolute Rotary Position Sensor
Steering Wheel Position Sensor
Pedal Position Sensor
Throttle Position Sensor
Float-Level Sensor
Ride Height Position Sensor
Non-Contacting Potentiometer
Rotary Dial
Application Circuit for AMR Sensors
AMR Sensor Bridge
VDDS
VSINP
VSINN
VCOSP
VCOSN
CB
100nF
VDDE
VOUT
VSSE
+5V Load
Circuit
Rout
Cout
VSSS
Application Circuit for TMR Sensors
TMR Sensor Bridge
e.g., MDT MMA253F
VCC
1 VDDS
Rs
X+
Rs
X-
Y+ Rs
Rs
3 VSINP
Rp
5 VSINN
2 VCOSP
Rp
6 VCOSN
GND
Y-
Rs=51kΩ
Rp = 5kΩ to 10kΩ
4 VSSS
10
VDDE
12
VOUT
11
VSSE
+5V
CB
100nF
Load
Circuit
Rout
Cout
Ordering Information
Sales Code
Description
Delivery Package
ZSSC5101BE1B ZSSC5101 Die – Temperature range: -40°C to +160°C
8” tested wafer, unsawn, thickness = 390 ±15µm
ZSSC5101BE2B ZSSC5101 Die – Temperature range: -40°C to +160°C
8” tested wafer, unsawn, thickness = 725 ±15µm
ZSSC5101BE3B ZSSC5101 Die – Temperature range: -40°C to +160°C
8” tested wafer, unsawn, thickness = 250 ±15µm
ZSSC5101BE1C ZSSC5101 Die – Temperature range: -40°C to +160°C
8” tested wafer, sawn on frame, thickness = 390 ±15µm
ZSSC5101BE4R ZSSC5101 SSOP-14 – Temperature range: -40°C to +150°C 13” tape and reel
ZSSC5101BE4T ZSSC5101 SSOP-14 – Temperature range: -40°C to +150°C Tube
ZSSC5101 KIT Evaluation Kit: USB Communication Board, ZSSC5101 AMR board, adapters. Software is downloaded (see data sheet).
Corporate Headquarters
6024 Silver Creek Valley Road
San Jose, CA 95138
www.IDT.com
Sales
1-800-345-7015 or 408-284-8200
Fax: 408-284-2775
www.IDT.com/go/sales
Tech Support
www.IDT.com/go/support
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance
specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The
information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an
implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property
rights of IDT or any third parties.
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be
reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the
property of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. All contents of this document are copyright of Integrated
Device Technology, Inc. All rights reserved.
© 2016 Integrated Device Technology, Inc.
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January 22, 2016



IDT ZSSC5101
ZSSC5101 Datasheet
Contents
1 IC Characteristics ............................................................................................................................................. 5
1.1. Absolute Maximum Ratings....................................................................................................................... 5
1.2. Operating Conditions ................................................................................................................................. 5
1.3. Electrical Parameters ................................................................................................................................ 6
1.3.1. ZSSC5101 Characteristics.................................................................................................................. 6
1.3.2. Input Stage Characteristics................................................................................................................. 7
1.3.3. Digital Calculation Characteristics ...................................................................................................... 8
1.3.4. Analog Output Stage Characteristics (Digital to VOUT) ..................................................................... 9
1.3.5. Analog Input to Analog Output Characteristics (Full Path) ............................................................... 10
1.3.6. Digital Interface Characteristics (CMOS compatible) ....................................................................... 10
1.3.7. Supervision Circuits .......................................................................................................................... 11
1.3.8. Power Loss Circuit ............................................................................................................................ 11
2 Circuit Description .......................................................................................................................................... 12
2.1. Overview.................................................................................................................................................. 12
2.2. Functional Description ............................................................................................................................. 12
2.3. One-Wire Interface and Command Mode (CM) ...................................................................................... 13
2.4. Power-Up/Power-Down Characteristics .................................................................................................. 14
2.5. Power Loss / GND Loss .......................................................................................................................... 14
2.5.1. Purpose............................................................................................................................................. 14
2.5.2. Power Loss Behavior ........................................................................................................................ 14
2.6. Diagnostics Mode (DM) ........................................................................................................................... 15
3 EEPROM ........................................................................................................................................................ 16
3.1. User Programmable Parameters in EEPROM ........................................................................................ 16
3.2. CRC Algorithm......................................................................................................................................... 16
3.3. EDC Algorithm ......................................................................................................................................... 16
4 Application Circuit Examples.......................................................................................................................... 17
4.1. Typical Application Circuit for AMR Double Wheatstone Sensor Bridges............................................... 17
4.2. Typical Application Circuit for TMR Sensor Bridges................................................................................ 18
4.3. Mechanical Set-up for Absolute Angle Measurements ........................................................................... 18
4.4. Mechanical Set-up for Linear Distance Measurements .......................................................................... 20
4.5. Input-to-Output Characteristics Calculation Examples............................................................................ 21
5 ESD and Latch-up Protection......................................................................................................................... 22
5.1. Human Body Model ................................................................................................................................. 22
5.2. Machine Model ........................................................................................................................................ 22
5.3. Charged Device Model ............................................................................................................................ 22
5.4. Latch-Up .................................................................................................................................................. 22
6 Pin Configuration and Package Dimensions.................................................................................................. 23
© 2016 Integrated Device Technology, Inc.
3
January 22, 2016







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