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Static RAM. CY7C1062GE Datasheet

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Static RAM. CY7C1062GE Datasheet






CY7C1062GE RAM. Datasheet pdf. Equivalent




CY7C1062GE RAM. Datasheet pdf. Equivalent





Part

CY7C1062GE

Description

16-Mbit (512 K words x 32 bits) Static RAM



Feature


CY7C1062G CY7C1062GE 16-Mbit (512 K word s × 32 bits) Static RAM with Error-Cor recting Code (ECC) 16-Mbit (512 K word s × 32 bits) Static RAM with Error-Cor recting Code (ECC) Features ■ High sp eed ❐ tAA = 10 ns/15 ns ■ Embedded error-correcting code (ECC) for single- bit error correction ■ Low active and standby current ❐ ICC = 90 mA typica l ❐ ISB2 = 20 mA typical ■ Ope.
Manufacture

Cypress Semiconductor

Datasheet
Download CY7C1062GE Datasheet


Cypress Semiconductor CY7C1062GE

CY7C1062GE; rating voltage range: 1.65 V to 2.2 V, 2 .2 V to 3.6 V ■ 1.0-V data retention ■ Automatic power-down when deselecte d ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection a nd correction ■ Available in Pb-free 119-ball plastic ball grid array (PBGA) package Functional Description CY7C10 62G and CY7C1062GE are high-.


Cypress Semiconductor CY7C1062GE

performance CMOS fast static RAM devices with embedded ECC. Both have three chi p enables, giving easy memory expansion features. The CY7C1062GE device includ es an error indication pin that signals the host processor in the case of a s .


Cypress Semiconductor CY7C1062GE

.

Part

CY7C1062GE

Description

16-Mbit (512 K words x 32 bits) Static RAM



Feature


CY7C1062G CY7C1062GE 16-Mbit (512 K word s × 32 bits) Static RAM with Error-Cor recting Code (ECC) 16-Mbit (512 K word s × 32 bits) Static RAM with Error-Cor recting Code (ECC) Features ■ High sp eed ❐ tAA = 10 ns/15 ns ■ Embedded error-correcting code (ECC) for single- bit error correction ■ Low active and standby current ❐ ICC = 90 mA typica l ❐ ISB2 = 20 mA typical ■ Ope.
Manufacture

Cypress Semiconductor

Datasheet
Download CY7C1062GE Datasheet




 CY7C1062GE
CY7C1062G
CY7C1062GE
16-Mbit (512 K words × 32 bits) Static RAM
with Error-Correcting Code (ECC)
16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC)
Features
High speed
tAA = 10 ns/15 ns
Embedded error-correcting code (ECC) for single-bit error
correction
Low active and standby current
ICC = 90 mA typical
ISB2 = 20 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V
1.0-V data retention
Automatic power-down when deselected
Transistor-transistor logic (TTL) compatible inputs and outputs
ERR pin to indicate 1-bit error detection and correction
Available in Pb-free 119-ball plastic ball grid array (PBGA)
package
Functional Description
CY7C1062G and CY7C1062GE are high-performance CMOS
fast static RAM devices with embedded ECC. Both have three
chip enables, giving easy memory expansion features. The
CY7C1062GE device includes an error indication pin that signals
the host processor in the case of a single bit error-detection and
correction event.
To write to the device, take Chip Enables (CE1, CE2, and CE3
LOW) and Write Enable (WE) input LOW. If Byte Enable A (BA)
is LOW, then data from I/O pins (I/O0 through I/O7) is written into
the location specified on the address pins (A0 through A18). If
Byte Enable B (BB) is LOW, then data from I/O pins (I/O8 through
I/O15) is written into the location specified on the address pins
(A0 through A18). Likewise, BC and BD correspond with the I/O
pins I/O16 to I/O23 and I/O24 to I/O31, respectively.
To read from the device, take Chip Enables (CE1, CE2, and CE3
LOW) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If the first BA is LOW, then data from the
memory location specified by the address pins appear on I/O0 to
I/O7. If BB is LOW, then data from memory appears on I/O8 to
I/O15. Likewise, BC and BD correspond to the third and fourth
bytes. See Truth Table – CY7C1062G/CY7C1062GE on page 15
for a complete description of read and write modes.
The input and output pins (I/O0 through I/O31) are placed in a
high-impedance state when the device is deselected (CE1, CE2,
or CE3 HIGH), the outputs are disabled (OE HIGH), the byte
selects are disabled (BA-D HIGH), or during a write operation
(CE1, CE2 and CE3 LOW and WE LOW).
On the CY7C1062GE device, the detection and correction of a
single-bit error in the accessed location is indicated by the
assertion of the ERR output (ERR = High)[1].
CY7C1062G and CY7C1062GE devices are available in Pb-free
119-ball plastic ball grid array (PBGA) package.
For a complete list of related documentation, click here.
Note
1. This device does not support automatic write-back on error detection.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-81609 Rev. *G
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 30, 2017




 CY7C1062GE
Logic Block Diagram – CY7C1062G
ECC ENCODER
DATAIN DRIVERS
A0
A1
A2
A3 512K x 32
A4 RAM ARRAY
A5
A6
A7
A8
A9
COLUMN DECODER
Logic Block Diagram – CY7C1062GE
BD BC BB BA
ECC ENCODER
DATAIN DRIVERS
A0
A1
A2
A3 512K x 32
A4 RAM ARRAY
A5
A6
A7
A8
A9
COLUMN DECODER
BD BC BB BA
Document Number: 001-81609 Rev. *G
CY7C1062G
CY7C1062GE
I/O0I/O7
I/O8I/O15
II//OO1264‐‐II//OO2332
WE
BD
BC
BB
BA
WE
OE
CE3
CE2
CE1
I/O0I/O7
I/O8I/O15
II//OO1264‐‐II//OO2332
WE
BD
BC
BB
BA
ERR
WE
OE
CE3
CE2
CE1
Page 2 of 20




 CY7C1062GE
CY7C1062G
CY7C1062GE
Contents
Pin Configurations ........................................................... 4
Product Portfolio .............................................................. 5
Maximum Ratings ............................................................. 6
Operating Range ............................................................... 6
DC Electrical Characteristics .......................................... 6
Capacitance ...................................................................... 7
Thermal Resistance .......................................................... 7
AC Test Loads and Waveforms ....................................... 7
Data Retention Characteristics ....................................... 8
Data Retention Waveform ................................................ 8
AC Switching Characteristics ......................................... 9
Switching Waveforms .................................................... 10
Truth Table – CY7C1062G/CY7C1062GE ...................... 15
ERR Output – CY7C1062GE .......................................... 15
Ordering Information ...................................................... 16
Ordering Code Definitions ......................................... 16
Package Diagrams .......................................................... 17
Acronyms ........................................................................ 18
Document Conventions ................................................. 18
Units of Measure ....................................................... 18
Document History Page ................................................. 19
Sales, Solutions, and Legal Information ...................... 20
Worldwide Sales and Design Support ....................... 20
Products .................................................................... 20
PSoC® Solutions ...................................................... 20
Cypress Developer Community ................................. 20
Technical Support ..................................................... 20
Document Number: 001-81609 Rev. *G
Page 3 of 20



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