DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V(BR)DSS 30V
RDS(on)
12.5mΩ @ VGS= 10V 14.8mΩ @ VGS= 4.5V
ID max
TA = 25°C (Note 5) 11.7A
10.8A
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ...
