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MODE MOSFET. DMG4710SSS Datasheet

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MODE MOSFET. DMG4710SSS Datasheet






DMG4710SSS MOSFET. Datasheet pdf. Equivalent




DMG4710SSS MOSFET. Datasheet pdf. Equivalent





Part

DMG4710SSS

Description

N-CHANNEL ENHANCEMENT MODE MOSFET



Feature


DMG4710SSS N-CHANNEL ENHANCEMENT MODE MO SFET WITH SCHOTTKY DIODE Product Summa ry V(BR)DSS 30V RDS(on) 12.5mΩ @ VGS = 10V 14.8mΩ @ VGS= 4.5V ID max TA = 25°C (Note 5) 11.7A 10.8A Description and Applications This new generation M OSFET has been designed to minimize the onstate resistance (RDS(on)) and yet m aintain superior switching performance, making it ideal for .
Manufacture

Diodes

Datasheet
Download DMG4710SSS Datasheet


Diodes DMG4710SSS

DMG4710SSS; high efficiency power management applica tions. • DC-DC Converters • Power m anagement functions Features • DIOFE T utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses • Low VSD - reducing the losse s due to body diode conduction • Low Qrr - lower Qrr of the integra.


Diodes DMG4710SSS

ted Schottky reduces body diode switchin g losses • Low gate capacitance (Qg/Q gs) ratio – reduces risk of shootthro ugh or cross conduction currents at hig h frequencies • Avalanche rugged – IAR and EAR rated • Lead Free, RoHS C ompliant ( .


Diodes DMG4710SSS

.

Part

DMG4710SSS

Description

N-CHANNEL ENHANCEMENT MODE MOSFET



Feature


DMG4710SSS N-CHANNEL ENHANCEMENT MODE MO SFET WITH SCHOTTKY DIODE Product Summa ry V(BR)DSS 30V RDS(on) 12.5mΩ @ VGS = 10V 14.8mΩ @ VGS= 4.5V ID max TA = 25°C (Note 5) 11.7A 10.8A Description and Applications This new generation M OSFET has been designed to minimize the onstate resistance (RDS(on)) and yet m aintain superior switching performance, making it ideal for .
Manufacture

Diodes

Datasheet
Download DMG4710SSS Datasheet




 DMG4710SSS
DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V(BR)DSS
30V
RDS(on)
12.5mΩ @ VGS= 10V
14.8mΩ @ VGS= 4.5V
ID max
TA = 25°C (Note 5)
11.7A
10.8A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
Power management functions
Features
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Low RDS(ON) - minimizes conduction losses
Low VSD - reducing the losses due to body diode conduction
Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – IAR and EAR rated
Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
Top View
SD
SD
SD
GD
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMG4710SSS-13
Case
SO-8
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
2500 / Tape & Reel
Marking Information
8
G4710SS
YY WW
5
14
Logo
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
Year: “10” = 2010
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
1 of 6
www.diodes.com
November 2010
© Diodes Incorporated




 DMG4710SSS
DMG4710SSS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 10V
Steady
State
Continuous Drain Current (Note 5) VGS = 10V
t 10 sec
Continuous Drain Current (Note 5) VGS = 4.5V
t 10 sec
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
Symbol
VDSS
VGSS
ID
ID
ID
IDM
IAR
EAR
Value
30
±12
8.8
6.3
11.7
8.5
10.8
7.8
90
13
25.4
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.54
81
2.8
45
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
IS
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
30
-
-
1.0
-
-
-
-
-
-
-
-
0.54
-
-
-
-
-
-
-
-
Typ
-
-
-
-
9.5
11.5
22
0.38
-
1849
158
123
2.68
18.5
43
4.7
4.0
6.62
8.73
36.41
4.69
Max
-
0.1
±100
2.3
12.5
14.8
-
0.6
5
-
-
-
4.82
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 1mA
mA VDS = 30V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 11.7A
VGS = 4.5V, ID = 10.8A
S VDS = 5V, ID = 11.7A
V VGS = 0V, IS = 1A
A-
pF
pF
VDS =15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS =0V, VGS = 0V, f = 1MHz
nC
nC VDS = 15V, VGS = 10V,
nC ID = 11.7A
nC
ns
ns VGS = 10V, VDS = 10V,
ns RG = 3, RL = 1.2
ns
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 1 oz. Copper, single sided , device is measured at t 10 sec.
6. Repetitive rating, pulse width limited by junction temperature.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
2 of 6
www.diodes.com
November 2010
© Diodes Incorporated




 DMG4710SSS
DMG4710SSS
30
VGS = 4.5V
25 VGS = 4.0V
VGS = 3.5V
20 VGS = 3.0V
15
10 VGS = 2.5V
5
0
0
0.05
VGS = 2.0V
VGS = 2.2V
0.5 1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
2
0.04
0.03
0.02
0.01
0
0
1.6
1.4
1.2
VGS = 4.5V
VGS = 10V
5 10 15 20 25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
VGS = 4.5V
ID = 10A
VGS = 10V
ID = 20A
1.0
0.8
30
25 VDS = 5V
20
15
10
5
0
0
0.04
VGS = 150°C
VGS = 125°C
VGS = 85°C
VGS = 25°C
VGS = -55°C
0.5 1 1.5 2 2.5 3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VGS = 4.5V
0.03
0.02
0.01
0
0
0.03
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
5 10 15 20 25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.02
0.01
VGS = 4.5V
ID = 10A
VGS = 10V
ID = 20A
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
3 of 6
www.diodes.com
November 2010
© Diodes Incorporated



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