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MOSFET H-BRIDGE. DMHC10H170SFJ Datasheet

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MOSFET H-BRIDGE. DMHC10H170SFJ Datasheet






DMHC10H170SFJ H-BRIDGE. Datasheet pdf. Equivalent




DMHC10H170SFJ H-BRIDGE. Datasheet pdf. Equivalent





Part

DMHC10H170SFJ

Description

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVANCEADDIVNAFNOCREM IANTIFOONRMATION DMHC10H170SFJ 100V COMPLEMENTARY ENHANC EMENT MODE MOSFET H-BRIDGE Product Sum mary Features Device BVDSS Q1 & Q4 10 0V Q2 & Q3 -100V RDS(ON) MAX 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TA = +25°C 2.9A 2.6A -2.3A -2.1A Lo w On-Resistance Low Input Capacitance Totally Lead-Free & Fully .
Manufacture

Diodes

Datasheet
Download DMHC10H170SFJ Datasheet


Diodes DMHC10H170SFJ

DMHC10H170SFJ; RoHS Compliant (Notes 1 & 2) Halogen an d Antimony Free. “Green” Device (No te 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data D escription This new generation MOSFET i s designed to minimize the on-state res istance (RDS(ON)) and yet maintain supe rior switching performance, making it i deal for high-efficiency power manageme nt applications. Appli.


Diodes DMHC10H170SFJ

cations Case: V-DFN5045-12 Case Mater ial: Molded Plastic, “Green” Moldin g Compound. UL Flammability Classificat ion Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connec tions: See Diagram T .


Diodes DMHC10H170SFJ

.

Part

DMHC10H170SFJ

Description

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVANCEADDIVNAFNOCREM IANTIFOONRMATION DMHC10H170SFJ 100V COMPLEMENTARY ENHANC EMENT MODE MOSFET H-BRIDGE Product Sum mary Features Device BVDSS Q1 & Q4 10 0V Q2 & Q3 -100V RDS(ON) MAX 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TA = +25°C 2.9A 2.6A -2.3A -2.1A Lo w On-Resistance Low Input Capacitance Totally Lead-Free & Fully .
Manufacture

Diodes

Datasheet
Download DMHC10H170SFJ Datasheet




 DMHC10H170SFJ
DMHC10H170SFJ
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Features
Device BVDSS
Q1 & Q4 100V
Q2 & Q3 -100V
RDS(ON) MAX
160m@ VGS = 10V
200m@ VGS = 4.5V
250m@ VGS = -10V
300m@ VGS = -4.5V
ID
TA = +25°C
2.9A
2.6A
-2.3A
-2.1A
Low On-Resistance
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Case: V-DFN5045-12
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.056 grams (Approximate)
High-Efficiency Bridge Rectifiers
V-DFN5045-12
Top View
Pin 1
G1 S1 S1 G2 S2 S2
D1/D2
D3/D4
D1/D2
D3/D4
G4 S4 S4 G3 S3 S3
Bottom View
S3 7 Q3 (Pch)
Pin
OSu3t 8
Pin
OGu3t 9
Pin
OSu4t 10 Q4 (Nch)
Pin
OSu4t 11
Pin
OGu4t 12
Pin
Out
D3,D4 to backside
Q2 (Pch) 6 S2
Pin
5 OSu2t
Pin
4 OGu2t
Pin
Q1 (Nch) 3 OSu1t
Pin
2 OSu1t
Pin
1 OGu1t
Pin
Out
D1,D2 to backside
Internal Schematic
Ordering Information (Note 4)
Part Number
DMHC10H170SFJ-13
Case
V-DFN5045-12
Tape Width
12mm
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
C170SJ
YY WW
=Manufacturer’s Marking
C170SJ = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
1 of 9
www.diodes.com
January 2016
© Diodes Incorporated




 DMHC10H170SFJ
Maximum Ratings Q1 & Q4 N-Channel (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, Duty Cycle = 1%)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
DMHC10H170SFJ
Value
100
±20
2.9
2.3
2.5
13
Unit
V
V
A
A
A
Maximum Ratings Q2 & Q3 P-Channel (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, Duty Cycle = 1%)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IS
IDM
Value
-100
±20
-2.3
-1.9
-2.4
-11
Unit
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
Symbol
PD
RJA
RJC
TJ, TSTG
Note:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
Value
2.1
60
6
-55 to +150
Unit
W
°C/W
°C
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
2 of 9
www.diodes.com
January 2016
© Diodes Incorporated




 DMHC10H170SFJ
DMHC10H170SFJ
Electrical Characteristics Q1 & Q4 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
100
1.0




Typ
2.0
111
121
0.9
1,167
36
25
1.3
4.9
9.7
2.0
2.0
10.5
11.1
42.6
12.8
30.3
35.2
Max
1
±100
3.0
160
200
1.0




Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 5A
VGS = 4.5V, ID = 5A
V VGS = 0V, IS = 10A
pF VDS = 25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = 80V, ID = 12.8A
ns VDD = 50V, RG = 25, ID = 12.8A
ns VGS = 0V, IS = 12.8A, dI/dt = 100A/μs
nC VGS = 0V, IS = 12.8A, dI/dt = 100A/μs
Electrical Characteristics Q2 & Q3 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
-100
-1.0




Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Typ
-1.6
191
213
-0.9
1,239
42
28
13
8.4
17.5
2.8
3.2
9.1
14.9
57.4
34.4
25.2
24.5
Max
1
±100
-3.0
250
300
-1.2




Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -80V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
mVGS = -10V, ID = -5A
VGS = -4.5V, ID =-5A
V VGS = 0V, IS = -5A
pF VDS = -25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = -60V, ID = -5A
ns VDD = -50V, Rg = 9.1, ID = -5A
ns VGS = 0V, IS = -5A, di/dt = 100A/μs
nC VGS = 0V, IS = -5A, di/dt = 100A/μs
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
3 of 9
www.diodes.com
January 2016
© Diodes Incorporated



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