DatasheetsPDF.com

MOSFET H-BRIDGE. DMHC3025LSDQ Datasheet

DatasheetsPDF.com

MOSFET H-BRIDGE. DMHC3025LSDQ Datasheet






DMHC3025LSDQ H-BRIDGE. Datasheet pdf. Equivalent




DMHC3025LSDQ H-BRIDGE. Datasheet pdf. Equivalent





Part

DMHC3025LSDQ

Description

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


.
Manufacture

Diodes

Datasheet
Download DMHC3025LSDQ Datasheet


Diodes DMHC3025LSDQ

DMHC3025LSDQ; .


Diodes DMHC3025LSDQ

.


Diodes DMHC3025LSDQ

.

Part

DMHC3025LSDQ

Description

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


.
Manufacture

Diodes

Datasheet
Download DMHC3025LSDQ Datasheet




 DMHC3025LSDQ
DMHC3025LSDQ
30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
V(BR)DSS
N-Channel
30V
P-Channel -30V
RDS(ON) max
25m@ VGS = 10V
40m@ VGS = 4.5V
50m@ VGS = -10V
80m@ VGS = -4.5V
ID max
TA = +25°C
6.0
4.6
-4.2
-3.2
Description and Applications
This new generation complementary MOSFET H-Bridge features
2 N and 2 P channel in an SOIC package. Qualified to AECQ101 the
H bridge is ideally suited to driving :
Solenoids
DC Motors
Audio Outputs
Features
2 x N + 2 x P channels in a SOIC package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (approximate)
SO-8
H-Bridge
Top View
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 5)
Part Number
DMHC3025LSDQ-13
Compliance
Automotive
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C3025LS
YY WW
1
DMHC3025LSDQ
Document number: DS37220 Rev. 1 - 2
4
= Manufacturer’s Marking
C3025LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
1 of 9
www.diodes.com
May 2014
© Diodes Incorporated




 DMHC3025LSDQ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t < 10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t < 10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t < 10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t < 10s
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t < 10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMHC3025LSDQ
Value
1.5
83
50
14.5
-55 to 150
Units
W
°C/W
°C
Value
30
±20
6.0
4.8
7.8
6.1
4.6
3.6
6.1
4.8
2.5
60
Units
V
V
A
A
A
A
A
A
Value
30
±20
-4.2
-3.3
-5.4
-4.3
-3.2
-2.5
-4.3
-3.3
-2.5
-30
Units
V
V
A
A
A
A
A
A
DMHC3025LSDQ
Document number: DS37220 Rev. 1 - 2
2 of 9
www.diodes.com
May 2014
© Diodes Incorporated




 DMHC3025LSDQ
DMHC3025LSDQ
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
30
1
Typ
19
26
4
0.70
590
122
58
1.5
5.4
11.7
1.8
2.1
11.2
15
17.5
8.7
18.3
12
Max
0.5
±1
2
25
40
1.2
Unit
V
μA
μA
V
m
S
V
pF
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5A
VGS = 4.5V, ID = 4A
VDS = 5V, ID = 5A
VGS = 0V, IS = 1.7A
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, ID = 7.8A
VDD = 15V, VGS = 4.5V,
RL = 2.4, RG = 1,
IF = 12A, di/dt = 500A/μs
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Min
-30
-1
Typ
43
68
3.5
-0.7
631
137
70
10.8
5.5
11.4
1.8
2.4
7.5
4.9
28.2
13.5
15.1
15.3
Max
-0.5
±1
-2
50
80
-1.2
Unit
V
μA
μA
V
m
S
V
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
VDS = -5V, ID = -5A
VGS = 0V, IS = -1.7A
VDS = -15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -6A
VDD = -15V, VGS = -10V,
RG = 6, ID = -1A
IF = 12A, di/dt = 500A/μs
DMHC3025LSDQ
Document number: DS37220 Rev. 1 - 2
3 of 9
www.diodes.com
May 2014
© Diodes Incorporated



Recommended third-party DMHC3025LSDQ Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)