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MOSFET H-BRIDGE. DMHC6070LSD Datasheet

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MOSFET H-BRIDGE. DMHC6070LSD Datasheet






DMHC6070LSD H-BRIDGE. Datasheet pdf. Equivalent




DMHC6070LSD H-BRIDGE. Datasheet pdf. Equivalent





Part

DMHC6070LSD

Description

60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVANCE INNEFWORPRMOADTIUOCNT DMHC6070L SD 60V COMPLEMENTARY ENHANCEMENT MODE M OSFET H-BRIDGE Product Summary Device N-Channel P-Channel V(BR)DSS 60V -60V RDS(ON) Max 100mΩ @ VGS = 10V 120m @ VGS = 4.5V 170mΩ @ VGS = -10V 25 0mΩ @ VGS = -4.5V ID Max TA = 25°C 4.1A 3.7A 3.1A 2.6A Description This n ew generation complementary MOSFET H-Br idge features low on-resist.
Manufacture

Diodes

Datasheet
Download DMHC6070LSD Datasheet


Diodes DMHC6070LSD

DMHC6070LSD; ance achievable with low gate drive. Ap plications DC Motor Control DC-AC Inv erters Features 2 x N + 2 x P Channel s in a SOIC Package Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS C ompliant (Notes 1 & 2) Halogen and Ant imony Free. “Green” Device (Note 3) Mechanical Data Case: SO-8 Case Mate rial: Molded Plastic, .


Diodes DMHC6070LSD

"Green" Molding Compound. UL Flammabilit y Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Te rminal Connections Indicator: See diagr am Terminals: Finish – Matte Tin Ann ealed over C .


Diodes DMHC6070LSD

.

Part

DMHC6070LSD

Description

60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE



Feature


ADVANCE INNEFWORPRMOADTIUOCNT DMHC6070L SD 60V COMPLEMENTARY ENHANCEMENT MODE M OSFET H-BRIDGE Product Summary Device N-Channel P-Channel V(BR)DSS 60V -60V RDS(ON) Max 100mΩ @ VGS = 10V 120m @ VGS = 4.5V 170mΩ @ VGS = -10V 25 0mΩ @ VGS = -4.5V ID Max TA = 25°C 4.1A 3.7A 3.1A 2.6A Description This n ew generation complementary MOSFET H-Br idge features low on-resist.
Manufacture

Diodes

Datasheet
Download DMHC6070LSD Datasheet




 DMHC6070LSD
DMHC6070LSD
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
N-Channel
P-Channel
V(BR)DSS
60V
-60V
RDS(ON) Max
100m@ VGS = 10V
120mΩ @ VGS = 4.5V
170mΩ @ VGS = -10V
250mΩ @ VGS = -4.5V
ID Max
TA = 25°C
4.1A
3.7A
3.1A
2.6A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Applications
DC Motor Control
DC-AC Inverters
Features
2 x N + 2 x P Channels in a SOIC Package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
H-Bridge
Top View
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMHC6070LSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMHC6070LSD
Document number: DS38714 Rev. 1 - 2
85
HC6070LD
YY WW
= Manufacturer’s Marking
HC6070LD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
14
1 of 10
www.diodes.com
April 2016
© Diodes Incorporated




 DMHC6070LSD
Maximum Ratings N-Channel (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Maximum Ratings P-Channel (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMHC6070LSD
Value
60
±20
3.1
2.5
4.1
3.3
2.0
15
12
8
Units
V
V
A
A
A
A
A
mJ
Value
-60
±20
-2.4
-1.9
-3.1
-2.5
-2.0
-12
-12
8
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.6
75
45
11
-55 to +150
Units
W
°C/W
°C
DMHC6070LSD
Document number: DS38714 Rev. 1 - 2
2 of 10
www.diodes.com
April 2016
© Diodes Incorporated




 DMHC6070LSD
DMHC6070LSD
Electrical Characteristics N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1.0



Typ
60
70
0.8
731
34
23
1.3
5.2
11.5
2.1
1.5
9.6
11
61
21
10.5
4.0
Max
1
100
3.0
100
120
1.2



Unit
V
µA
nA
V
m
V
pF
nC
ns
ns
nC
Test Condition
ID = 250µA, VGS= 0V
VDS= 60V, VGS= 0V
VGS= 20V, VDS= 0V
ID= 250µA, VDS= VGS
VGS= 10V, ID= 1.0A
VGS= 4.5V, ID= 0.5A
VGS= 0V, IS= 3A
VDS= 20V, VGS= 0V
f= 1MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS= 4.5V
VDS= 30V
VGS= 10V
ID= 3A
VDD= 30V, VGS= 10V
RL 50, RG 20
IS = 1.0A, dI/dt = 100A/μs
IS = 1.0A, dI/dt = 100A/μs
Electrical Characteristics P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
-60
-1




Typ
120
170
-0.8
618
36
26
13
4.3
8.9
1.4
1.7
7.6
11.6
79.8
37.8
10.8
3.8
Max
-1
±100
-3
170
250
-1.2



Unit
V
μA
nA
V
m
V
pF
nC
ns
ns
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMHC6070LSD
Document number: DS38714 Rev. 1 - 2
3 of 10
www.diodes.com
Test Condition
VGS = 0V, ID = -250μA
VDS = -60V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -10V, ID = -1.0A
VGS = -4.5V, ID = -0.5A
VGS = 0V, IS = -2A
VDS = -20V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VGS= -4.5V
VDS= -30V
VGS= -10V
ID= -2A
VDD= -30V, VGS= -10V
RL 50, RG 20
IS = -1.0A, dI/dt = 100A/μs
IS = -1.0A, dI/dt = 100A/μs
April 2016
© Diodes Incorporated



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