BSS123WQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) 6.0Ω @ VGS = 10V
ID TA = +25°C
170mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
Low Gate Thres...