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N-CHANNEL MOSFET. BSS123WQ Datasheet

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N-CHANNEL MOSFET. BSS123WQ Datasheet






BSS123WQ MOSFET. Datasheet pdf. Equivalent




BSS123WQ MOSFET. Datasheet pdf. Equivalent





Part

BSS123WQ

Description

N-CHANNEL MOSFET



Feature


BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSF ET Product Summary V(BR)DSS 100V RDS (ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is desi gned to minimize the on-state resistanc e (RDS(ON)) and yet maintain superior s witching performance, making it ideal f or high efficiency power management app lications. Features and Benefits Low Gate Threshold Voltag.
Manufacture

Diodes

Datasheet
Download BSS123WQ Datasheet


Diodes BSS123WQ

BSS123WQ; e Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Le ad-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Gr een” Device (Note 3) Qualified to AE C-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Sm all Servo Motor Control Power MOSFET G ate Drivers Switching.


Diodes BSS123WQ

Applications SOT323 Mechanical Data D Case: SOT323 Case Material: Mold ed Plastic, "Green" Molding Compound, U L Flammability Classification Rating 94 V-0 Moisture Sensitivity: Level 1 per J -STD-0 .


Diodes BSS123WQ

.

Part

BSS123WQ

Description

N-CHANNEL MOSFET



Feature


BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSF ET Product Summary V(BR)DSS 100V RDS (ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is desi gned to minimize the on-state resistanc e (RDS(ON)) and yet maintain superior s witching performance, making it ideal f or high efficiency power management app lications. Features and Benefits Low Gate Threshold Voltag.
Manufacture

Diodes

Datasheet
Download BSS123WQ Datasheet




 BSS123WQ
BSS123WQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
100V
RDS(ON)
6.0@ VGS = 10V
ID
TA = +25°C
170mA
Description
This MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
SOT323
Mechanical Data
D
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (approximate)
D
Top View
G
S
Equivalent Circuit
GS
Top View
Ordering Information (Notes 4 & 5)
Notes:
Part Number
BSS123WQ-7-F
Compliance
Automotive
Case
SOT323
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K23
K23 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year 2002 2003 2004 2005 2006 2014 2015
Code
N
P
R
S
T
B
C
Month
Jan
Feb
Mar Apr May Jun
Jul
Code
1
2
3
4
5
6
7
BSS123WQ
Document number: DS37469 Rev. 1 - 2
1 of 5
www.diodes.com
2016
D
2017
E
2018
F
2019
G
2020
H
2021
I
Aug Sep Oct Nov Dec
8 9 OND
September 2014
© Diodes Incorporated




 BSS123WQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 20K
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Continuous
Pulsed
Symbol
VDSS
VDGR
VGSS
ID
IDM
BSS123WQ
Value
100
100
20
170
680
Units
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS(Note 8)
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 100
V VGS = 0V, ID = 250µA
IDSS
1.0
10
µA VDS = 100V, VGS = 0V
nA VDS = 20V, VGS = 0V
IGSSF
50 nA VGS = 20V, VDS = 0V
VGS(th)
RDS(ON)
gFS
VSD
0.8
80
1.4
370
0.84
2.0
6.0
10
1.3
V VDS = VGS, ID = 1mA
VGS = 10V, ID = 0.17A
VGS = 4.5V, ID = 0.17A
mS VDS = 10V, ID = 0.17A, f = 1.0KHz
V VGS = 0V, IS = 0.34A
Ciss 29 60 pF
Coss
10
15
pF VDS = 25V, VGS = 0V, f = 1.0MHz
Crss
2
6 pF
tr   8 ns
tf   16 ns VDD = 30V, ID = 0.28A,
tD(ON)
8
ns RGEN = 6.0, VGS = 10V
tD(OFF)
13
ns
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
BSS123WQ
Document number: DS37469 Rev. 1 - 2
2 of 5
www.diodes.com
September 2014
© Diodes Incorporated




 BSS123WQ
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1.2
1.1
1 2 34
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
5
VDS = VGS
ID = 250A
1
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
50
40
30
20
10
0
0 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
BSS123WQ
2.4
2.0
1.6
1.2
0.8
0.1 0.2 0.3 0.4 0.5 0.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
250
200
150
100
50
0
0 100 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Power Derating Curve, Total Package
BSS123WQ
Document number: DS37469 Rev. 1 - 2
3 of 5
www.diodes.com
September 2014
© Diodes Incorporated



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