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N-CHANNEL MOSFET. DMN1016UCB6 Datasheet

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N-CHANNEL MOSFET. DMN1016UCB6 Datasheet






DMN1016UCB6 MOSFET. Datasheet pdf. Equivalent




DMN1016UCB6 MOSFET. Datasheet pdf. Equivalent





Part

DMN1016UCB6

Description

N-CHANNEL MOSFET



Feature


DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE M OSFET Product Summary V(BR)DSS 12V R DS(ON) 20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V ID TA = +25°C 6.6A 6.1A Feat ures and Benefits Low QG & QGD Small Footprint Low Profile 0.62mm Height T otally Lead-Free & Full RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre e. “Green” Device (Note 3) Qualifi ed to AEC-Q101 Standards fo.
Manufacture

Diodes

Datasheet
Download DMN1016UCB6 Datasheet


Diodes DMN1016UCB6

DMN1016UCB6; r High Reliability Description This new generation MOSFET is designed to minim ize the on-state resistance (RDS(ON)), yet maintain superior switching perform ance, making it ideal for high-efficien cy power management applications. Appli cations Battery Management Load Switc h Battery Protection Mechanical Data Case: U-WLB1510-6 Terminal Connection s: See Diagram Bel.


Diodes DMN1016UCB6

ow Terminals: Finished – SnAgCu Ball Weight: 0.0018 grams (Approximate) U- WLB1510-6 Top View Ordering Informati on (Note 4) Notes: Part Number DMN101 6UCB6-7 Case U-WLB1510-6 Packaging 3, 000/Tape & Reel .


Diodes DMN1016UCB6

.

Part

DMN1016UCB6

Description

N-CHANNEL MOSFET



Feature


DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE M OSFET Product Summary V(BR)DSS 12V R DS(ON) 20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V ID TA = +25°C 6.6A 6.1A Feat ures and Benefits Low QG & QGD Small Footprint Low Profile 0.62mm Height T otally Lead-Free & Full RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre e. “Green” Device (Note 3) Qualifi ed to AEC-Q101 Standards fo.
Manufacture

Diodes

Datasheet
Download DMN1016UCB6 Datasheet




 DMN1016UCB6
DMN1016UCB6
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
12V
RDS(ON)
20mΩ @ VGS = 4.5V
23mΩ @ VGS = 2.5V
ID
TA = +25°C
6.6A
6.1A
Features and Benefits
Low QG & QGD
Small Footprint
Low Profile 0.62mm Height
Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Battery Management
Load Switch
Battery Protection
Mechanical Data
Case: U-WLB1510-6
Terminal Connections: See Diagram Below
Terminals: Finished SnAgCu Ball
Weight: 0.0018 grams (Approximate)
U-WLB1510-6
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN1016UCB6-7
Case
U-WLB1510-6
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1510-6
PW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan Feb
12
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
2016
D
Mar
3
2017
E
Apr May
45
2018
F
Jun Jul
67
1 of 7
www.diodes.com
2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
October 2016
© Diodes Incorporated




 DMN1016UCB6
DMN1016UCB6
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS =4.5V
Continuous Drain Current (Note 6) VGS =4.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
Value
12
±8
5.5
4.2
6.6
5.3
30
Units
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
0.92
1.47
136
94
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Symbol Min
(@TC = +25°C)
BVDSS
IDSS
IGSS
12
Typ
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS(TH)
RDS(ON)
|YFS|
VSD
QRR
tRR
0.4
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
0.6
16
20
14
0.7
8
43.6
423
238
41
3
4.2
0.6
0.4
5
10
25
10
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz (0.071-mm thick) Cu.
7. 300ms pulse, pulse duty cycle<=2%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
2 of 7
www.diodes.com
Max
1.0
±100
1.0
20
23
1.0
550
310
55
5.5
8
40
Unit
Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 9.6V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 4.5V, ID = 1.5A
VGS = 2.5V, ID = 1.5A
S VDS = 6V, ID = 1.5A
V VGS = 0V, IS = 1.5A
nC VDD = 6V, IF = 1.5A,
ns di/dt =200A/µs
pF
pF VDS = 6V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VGS = 4.5V, VDS = 6V,
ID =1.5A
nC
ns
ns VDS = 6V, VGS = 4.5V,
ns RG = 4, ID = 1.5A
ns
October 2016
© Diodes Incorporated




 DMN1016UCB6
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
0.025
VGS = 8.0V
VGS = 4.5V
VGS = 2.0V
VGS = 2.5V
VGS = 4.0V
VGS = 1.5V
VGS = 1.0V
0.5 1
1.5 2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
DMN1016UCB6
20
VDS = 5.0V
18
16
14
12
10
8
6
4 TA = 150°C
TA = 85°C
2 TA = 125°C
TA = 25°C
0
0 0.5
TA = -55°C
1 1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.1
3
0.023
0.021
0.019
VGS = 2.5V
VGS = 4.5V
0.08
0.06
0.04
ID = 1.5A
0.017
0.02
0.015
0 2 4 6 8 10 12 14 16 18
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.03
0.028
VGS = 4.5V
20
0.026
TA = 150°C
0.024
0.022
TA = 125°C
TA = 85°C
0.02
0.018
0.016
TA = 25°C
TA = -55°C
0.014
0.012
0.01
0
2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0
0 1 23 4 5 67 8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
2
1.6
VGS = 2.5V
ID = 2.0A
1.2
VGS = 4.5V
ID = 5A
0.8
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMN1016UCB6
Document number: DS37124 Rev. 5 - 2
3 of 7
www.diodes.com
October 2016
© Diodes Incorporated



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