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N-CHANNEL MOSFET. DMN2005UPS Datasheet

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N-CHANNEL MOSFET. DMN2005UPS Datasheet






DMN2005UPS MOSFET. Datasheet pdf. Equivalent




DMN2005UPS MOSFET. Datasheet pdf. Equivalent





Part

DMN2005UPS

Description

N-CHANNEL MOSFET



Feature


A D VNAEN CWEPDRIONDFUOCRTM A T I O N D MN2005UPS Green 20V N-CHANNEL ENHANCEME NT MODE MOSFET POWERDI® Product Summa ry Features V(BR)DSS 20V RDS(ON) 4.6 mΩ @ VGS = 4.5V 8.7mΩ @ VGS = 2.5V ID TC = +25°C 100A 80A Description T his new generation P-Channel Enhancemen t Mode MOSFET has been designed to mini mize RDS(ON) and yet maintain superior switching performance. T.
Manufacture

Diodes

Datasheet
Download DMN2005UPS Datasheet


Diodes DMN2005UPS

DMN2005UPS; his device is ideal for use in Notebook battery power management and Loadswitch . Thermally Efficient Package-Cooler Running Applications High Conversion E fficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance F ast Switching Speed <1.1mm Package Pro file – Ideal for Thin Applications L ead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and An.


Diodes DMN2005UPS

timony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for H igh Reliability Mechanical Data Applic ations Motor Control DC-DC Converters Power Management POWERDI®5060-8 Ca se: POWERDI®50 .


Diodes DMN2005UPS

.

Part

DMN2005UPS

Description

N-CHANNEL MOSFET



Feature


A D VNAEN CWEPDRIONDFUOCRTM A T I O N D MN2005UPS Green 20V N-CHANNEL ENHANCEME NT MODE MOSFET POWERDI® Product Summa ry Features V(BR)DSS 20V RDS(ON) 4.6 mΩ @ VGS = 4.5V 8.7mΩ @ VGS = 2.5V ID TC = +25°C 100A 80A Description T his new generation P-Channel Enhancemen t Mode MOSFET has been designed to mini mize RDS(ON) and yet maintain superior switching performance. T.
Manufacture

Diodes

Datasheet
Download DMN2005UPS Datasheet




 DMN2005UPS
DMN2005UPS
Green
20V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
V(BR)DSS
20V
RDS(ON)
4.6mΩ @ VGS = 4.5V
8.7mΩ @ VGS = 2.5V
ID
TC = +25°C
100A
80A
Description
This new generation P-Channel Enhancement Mode MOSFET has
been designed to minimize RDS(ON) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and Loadswitch.
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Applications
Motor Control
DC-DC Converters
Power Management
POWERDI®5060-8
Case: POWERDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (Approximate)
D
S
D
Pin1
SD
SD
G
GD
Top View
Bottom View
S
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMN2005UPS-13
Case
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http‖//www.diodes.com/products/packages.html.
Marking Information
DDDD
N2005US
YY WW
=Manufacturers Marking
N2005US = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15= 2015)
WW = Week Code (01 to 53)
S S SG
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UPS
Document number: DS37844 Rev. 2 - 2
1 of 7
www.diodes.com
August 2015
© Diodes Incorporated




 DMN2005UPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Maximum Continuous Body Diode Forward Current (Mounted on Infinite Heatsink)
Avalanche Current (Note 7) L=0.2mH
Avalanche Energy (Note 7) L=0.2mH
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
DMN2005UPS
Value
20
±12
20
15
100
88
150
150
36
133
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.5
98
83
3.0
51
43
1.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
20
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
0.4
Typ Max
——
1
±100
0.7
0.8
5337
560
505
0.7
60
142
7
11
12.4
29.8
117
52
17.8
8.6
1.2
4.6
8.7
1.1
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 20V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 4.5V, ID = 13.5A
VGS = 2.5V, ID = 13.5A
V VGS = 0V, IS = 27A
pF
pF VDS = 10V, VGS = 0V,
f = 1MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 16V, ID = 27A
nC
ns
ns VGS = 5V, VDS = 10V,
ns RG = 4.7Ω, ID = 13.5A
ns
ns IF = 13.5A, di/dt = 100A/μs
nC IF = 13.5A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UPS
Document number: DS37844 Rev. 2 - 2
2 of 7
www.diodes.com
August 2015
© Diodes Incorporated




 DMN2005UPS
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
VGS=1.5V
VGS=2.0V
VGS=2.5V
VGS=3.0V
VGS=3.5V
VGS=4.0V
VGS=4.5V
VGS=10V
VGS=1.2V
VGS=1.0V
0.0
0
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.006
0.005
0.004
0.003
0.002
VGS=2.5V
VGS=4.5V
0.001
0
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
30
VDS= 5V
25
DMN2005UPS
20
15
10
5
0
0
125
150
85
25
-55
0.5 1 1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
ID=13.5A
0.002
0
0 2 4 6 8 10 12
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.006
0.005
VGS= 4.5V
0.004
0.003
0.002
125150
85
25
-55
0.001
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMN2005UPS
Document number: DS37844 Rev. 2 - 2
3 of 7
www.diodes.com
2.5
2
VGS=4.5V, ID=13.5A
1.5
1
0.5 VGS=2.5V, ID=13.5A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
August 2015
© Diodes Incorporated



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