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N-CHANNEL MOSFET. DMN2026UVT Datasheet

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N-CHANNEL MOSFET. DMN2026UVT Datasheet






DMN2026UVT MOSFET. Datasheet pdf. Equivalent




DMN2026UVT MOSFET. Datasheet pdf. Equivalent





Part

DMN2026UVT

Description

N-CHANNEL MOSFET



Feature


ADVANCE INFORMATION NEW PRODUCT DMN2026 UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 24m @ VGS = 4.5V 32m @ VGS = 2.5V ID TA = +25°C 6.2A Features and Benefits Low Input Capacitance Low O n-Resistance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fu lly RoHS Compliant (Notes 1 & 2) Halog en and Antimony Free. “.
Manufacture

Diodes

Datasheet
Download DMN2026UVT Datasheet


Diodes DMN2026UVT

DMN2026UVT; Green” Device (Note 3) Description an d Applications This new generation MOSF ET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power mana gement applications. DC-DC Converters Power Management Functions Backlighti ng Mechanical Data Case: TSOT26 Case Material: Molded Pl.


Diodes DMN2026UVT

astic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V- 0 Moisture Sensitivity: Level 1 per J- STD-020 Terminal Connections: See Diag ram Terminals: Finish – Tin Finish A nnealed over .


Diodes DMN2026UVT

.

Part

DMN2026UVT

Description

N-CHANNEL MOSFET



Feature


ADVANCE INFORMATION NEW PRODUCT DMN2026 UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 24m @ VGS = 4.5V 32m @ VGS = 2.5V ID TA = +25°C 6.2A Features and Benefits Low Input Capacitance Low O n-Resistance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fu lly RoHS Compliant (Notes 1 & 2) Halog en and Antimony Free. “.
Manufacture

Diodes

Datasheet
Download DMN2026UVT Datasheet




 DMN2026UVT
DMN2026UVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(ON) Max
24m@ VGS = 4.5V
32m@ VGS = 2.5V
ID
TA = +25°C
6.2A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
D
G
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2026UVT-7
DMN2026UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N5V
N5V = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
DMN2026UVT
Document number: DS37960 Rev. 1 - 2
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
1 of 6
www.diodes.com
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
May 2015
© Diodes Incorporated




 DMN2026UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Steady State
TA = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
DMN2026UVT
Value
20
±10
6.2
2
20
Unit
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
Steady state
t<10s
TA = +25°C
Steady state
t<10s
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
Value
1.15
107
76
1.75
75
50
16
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
20
0.4
-
Typ
18
21
0.7
887
91
37
191
10
18.4
1.3
1.8
53
66
619
197
119
96
Max
1
10
1.5
24
32
1.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 20V, VGS = 0V
μA VGS = 8V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 4.5V, ID = 6.2A
VGS = 2.5V, ID = 5.2A
V VGS = 0V, IS = 1.3A
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = 10V, ID = 6.5A
ns
VDS = 10V, VGS = 4.5V,
RG = 6Ω, RL = 10Ω, ID = 1A
ns IF = 4A, di/dt = 100A/μs
nC IF = 4A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN2026UVT
Document number: DS37960 Rev. 1 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated




 DMN2026UVT
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
VGS=1.8V
VGS=2.5V
VGS=3.5V
VGS=4.0V
VGS=4.5V
VGS=1.5V
VGS=1.2V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.05
0.045
VGS=1.5V
0.04
0.035
0.03
VGS=1.8V
0.025
0.02
VGS=2.5V
0.015
0.01
VGS=4.5V
0.005
0
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.03
VGS= 4.5V
0.025
TA=125
0.02
TA=150
TA=85
TA=25
0.015
TA=-55
0.01
DMN2026UVT
20
18 VDS= 5V
16
14
12
10
8
6
4 TA=125
2 TA=150
0
TA=85
TA=25
TA=-55
0 0.5 1 1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
ID=4A
234567
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
8
1.8
1.6
VGS=2.5V, ID=5.5A
1.4
1.2
VGS=4.5V, ID=6.5A
1
0.8
0.005
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
DMN2026UVT
Document number: DS37960 Rev. 1 - 2
3 of 6
www.diodes.com
May 2015
© Diodes Incorporated



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