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N-CHANNEL MOSFET. DMN2400UFDQ Datasheet

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N-CHANNEL MOSFET. DMN2400UFDQ Datasheet
















DMN2400UFDQ MOSFET. Datasheet pdf. Equivalent













Part

DMN2400UFDQ

Description

N-CHANNEL MOSFET



Feature


DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE M OSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6 Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1. 0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V ID TA = +25°C 0.9A 0.7A 0.5A 0.3A Des cription and Applications This MOSFET i s designed to minimize the on-state res istance (RDS(on)) and yet maintain supe rior switching performance,.
Manufacture

Diodes

Datasheet
Download DMN2400UFDQ Datasheet


Diodes DMN2400UFDQ

DMN2400UFDQ; making it ideal for high-efficiency pow er management applications. Power Mana gement Functions Battery Operated Syst ems and Solid-State Relays Load Switch Features and Benefits Low On-Resista nce Very low Gate Threshold Voltage, 1 .0V Max. Low Input Capacitance Fast S witching Speed ESD Protected Gate Tot ally Lead-Free & Fully RoHS Compliant ( Notes 1 & 2) Halo.


Diodes DMN2400UFDQ

gen and Antimony Free. “Green” Devic e (Note 3) Qualified to AEC-Q101 stand ards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: U-DFN1 212-3 Case Material: Molded Plastic; U L Flammabilit .


Diodes DMN2400UFDQ

.





Part

DMN2400UFDQ

Description

N-CHANNEL MOSFET



Feature


DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE M OSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6 Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1. 0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V ID TA = +25°C 0.9A 0.7A 0.5A 0.3A Des cription and Applications This MOSFET i s designed to minimize the on-state res istance (RDS(on)) and yet maintain supe rior switching performance,.
Manufacture

Diodes

Datasheet
Download DMN2400UFDQ Datasheet




 DMN2400UFDQ
DMN2400UFDQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
20V
RDS(ON)
0.6Ω @ VGS = 4.5V
0.8Ω @ VGS = 2.5V
1.0Ω @ VGS = 1.8V
1.6Ω @ VGS = 1.5V
ID
TA = +25°C
0.9A
0.7A
0.5A
0.3A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch
Features and Benefits
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V Max.
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: U-DFN1212-3
Case Material: Molded Plastic;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
ESD PROTECTED
U-DFN1212-3
pin 1
G
D
Top View
Bottom View
Gate Protection
Diode
S
Equivalent Circuit
S
D
G
Pin-out Top view
Ordering Information (Note 5)
Notes:
Part Number
DMN2400UFDQ-7
DMN2400UFDQ-13
Case
U-DFN1212-3
U-DFN1212-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN1212-3
K24
YM
K24 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
2015
Code
C
2016
D
Month Jan Feb
Code
1
2
DMN2400UFDQ
Document number: DS37853 Rev. 3 - 2
2017
E
Mar
3
2018
F
Apr
4
2019
G
2020
H
2021
I
May
5
Jun
6
Jul Aug
78
1 of 6
www.diodes.com
2022
J
Sep
9
2023
K
Oct
O
2024
L
2025
M
Nov Dec
ND
November 2015
© Diodes Incorporated




 DMN2400UFDQ
DMN2400UFDQ
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = 4.5V
Continuous Drain Current (Note 7) VGS = 2.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 7)
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
Value
20
±12
0.9
0.7
0.7
0.5
3.0
0.8
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RJA
PD
RJA
RJc
TJ, TSTG
Value
0.4
283
0.8
147
112
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
20
-
-
0.45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.35
0.45
0.6
0.7
1.4
0.7
37.0
5.7
4.2
68
0.5
0.07
0.1
4.06
7.28
13.74
10.54
Max
-
80
100
±1.0
1.0
0.6
0.8
1.0
1.6
-
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
nA VDS = 4.5V, VGS = 0V
VDS = 20V, VGS = 0V
µA VGS = ±4.5V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 200mA
VGS = 1.8V, ID = 100mA
VGS = 1.5V, ID = 50mA
S VDS = 3V, ID = 200mA
V VGS = 0V, IS = 500mA,
pF
pF VDS =16V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = 4.5V, VDS = 10V,
nC ID = 250mA
ns
ns
ns
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ns ID = 200mA
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN2400UFDQ
Document number: DS37853 Rev. 3 - 2
2 of 6
www.diodes.com
November 2015
© Diodes Incorporated




 DMN2400UFDQ
2.0
VGS = 4.5V
VGS = 2.5V
1.5 VGS = 2.0V
1.0
VGS = 1.8V
0.5 VGS = 1.5V
0
0
2.0
VGS = 1.2V
1 2 34
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
1.6
1.2 VGS = 1.5V
0.8
0.4
0
0
1.6
1.4
1.2
VGS = 1.8V
VGS = 2.5V
VGS = 5.0V
VGS = 4.5V
0.4 0.8 1.2 1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
VGS = 4.5V
ID = 1.0A
VGS = 2.5.V
ID = 500mA
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.5
VDS = 5V
1.0
DMN2400UFDQ
0.5
0
0
0.8
0.6
0.4
0.2
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1 1.5 2 2.5
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VGS = 4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
3
0
0 0.4 0.8 1.2 1.6
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
0.4 VGS = 2.5V
ID = 500mA
0.2 VGS = 4.5V
ID = 1.0A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMN2400UFDQ
Document number: DS37853 Rev. 3 - 2
3 of 6
www.diodes.com
November 2015
© Diodes Incorporated




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