DatasheetsPDF.com

N-CHANNEL MOSFET. DMN3008SFGQ Datasheet

DatasheetsPDF.com

N-CHANNEL MOSFET. DMN3008SFGQ Datasheet






DMN3008SFGQ MOSFET. Datasheet pdf. Equivalent




DMN3008SFGQ MOSFET. Datasheet pdf. Equivalent





Part

DMN3008SFGQ

Description

N-CHANNEL MOSFET



Feature


ADVANCE INFORMATION DMN3008SFGQ 30V N-C HANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits BVDSS 30V RDS(ON) max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID max TC = +25°C 62A 56A Description and Applic ations This MOSFET is designed to meet the stringent requirements of Automotiv e applications. It is qualified to AEC- Q101, supported by a PP.
Manufacture

Diodes

Datasheet
Download DMN3008SFGQ Datasheet


Diodes DMN3008SFGQ

DMN3008SFGQ; AP and is ideal for use in: Low RDS(ON ) – Ensures on-state losses are minim ized Small, form factor thermally effi cient package enables higher density en d products Occupies only 33% of the bo ard area occupied by SO-8 enabling smal ler end products 100% Unclamped Induct ive Switch (UIS) Test in Production To tally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halog.


Diodes DMN3008SFGQ

en and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standa rds for High Reliability PPAP Capable (Note 4) Backlighting Power Manageme nt Functions DC-DC Converters Mechani cal Data Case: Power .


Diodes DMN3008SFGQ

.

Part

DMN3008SFGQ

Description

N-CHANNEL MOSFET



Feature


ADVANCE INFORMATION DMN3008SFGQ 30V N-C HANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits BVDSS 30V RDS(ON) max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID max TC = +25°C 62A 56A Description and Applic ations This MOSFET is designed to meet the stringent requirements of Automotiv e applications. It is qualified to AEC- Q101, supported by a PP.
Manufacture

Diodes

Datasheet
Download DMN3008SFGQ Datasheet




 DMN3008SFGQ
DMN3008SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Features and Benefits
BVDSS
30V
RDS(ON) max
4.4m@ VGS = 10V
5.5mΩ @ VGS = 4.5V
ID max
TC = +25°C
62A
56A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Low RDS(ON) Ensures on-state losses are minimized
Small, form factor thermally efficient package enables higher
density end products
Occupies only 33% of the board area occupied by SO-8 enabling
smaller end products
100% Unclamped Inductive Switch (UIS) Test in Production
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8
D
S Pin 1
S
S
G
D
D
D
D
Bottom View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMN3008SFGQ-7
DMN3008SFGQ-13
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI3333-8
N08
POWERDI is a registered trademark of Diodes Incorporated.
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
N08 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated




 DMN3008SFGQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Steady
State
Continuous Drain Current (Note 7) VGS = 10V
t<10s
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
IDM
IS
IAS
EAS
DMN3008SFGQ
Value
30
±20
17.6
14.1
23.0
18.4
62
80
2
45
101
Units
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t < 10s
TA = +25°C
TA = +70°C
Steady State
t < 10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
30
1
Typ
3.9
4.6
0.75
3,690
530
459
0.9
41
86
9.2
18.6
5.7
14.0
63.7
28.4
19.3
10.7
Max
10
±100
2.3
4.4
5.5
1.2
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Value
0.9
0.6
134
79
2.1
1.3
58
34
4.8
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 13.5A
V VGS = 0V, IS = 1A
pF
pF
VDS = 10V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 24V, ID = 27A
nC
ns
ns
ns
VDD = 15V, VGS = 10V,
RL = 1.11Ω, RG = 4.7Ω,
ns ID = 13.5A
ns
nC
IF = 13.5A, di/dt=100A/μs
POWERDI is a registered trademark of Diodes Incorporated.
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
2 of 7
www.diodes.com
May 2016
© Diodes Incorporated




 DMN3008SFGQ
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
0.006
VGS = 10V
VGS = 4.5V
VGS = 4.0V
VGS = 3.0V
VGS = 2.5V
VGS = 2.0V
VGS = 1.8V
0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
DMN3008SFGQ
30
VDS = 5.0V
25
NT()A 20
RE
R
U
C 15
N
AI
R
D 10
,
I
D
5
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
0.03
0.5 1 1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
0.0055
0.005
0.0045
VGS = 4.5V
0.025
0.02
0.004
0.0035
0.003
0.0025
VGS = 10V
0.015
0.01
0.005
ID = 13.5A
0.002
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0 2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
) 0.01 VGS = 4.5V
(E 0.009
C
N
TSA 0.008
RESI 0.007
N- 0.006
O
TA = 150°C
TA = 125°C
TA = 85°C
CE 0.005
R
U
O
0.004
N-S
RAI
0.003
D 0.002
, )N
O
(S
0.001
RD 0
TA = 25°C
TA = -55°C
0 5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
1.8
1.6
VGS = 4.5V
1.4 ID = 13.5A
1.2
VGS = 10V
ID = 13.5A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
3 of 7
www.diodes.com
May 2016
© Diodes Incorporated



Recommended third-party DMN3008SFGQ Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)