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N-CHANNEL MOSFET. DMN3027LFG Datasheet

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N-CHANNEL MOSFET. DMN3027LFG Datasheet






DMN3027LFG MOSFET. Datasheet pdf. Equivalent




DMN3027LFG MOSFET. Datasheet pdf. Equivalent





Part

DMN3027LFG

Description

N-CHANNEL MOSFET



Feature


ADVANCE INNEFWORPRMOADTIUOCNT Green DMN 3027LFG N-CHANNEL ENHANCEMENT MODE MOSF ET POWERDI® Product Summary BVDSS 30 V RDS(ON) max 18.6mΩ @ VGS = 10V 26. 5mΩ @ VGS = 4.5V ID TA = +25°C 8.0A 6.5A Description This new generation MOSFET is designed to minimize the on-s tate resistance (RDS(ON)) and yet maint ain superior switching performance, mak ing it ideal for high-ef.
Manufacture

Diodes

Datasheet
Download DMN3027LFG Datasheet


Diodes DMN3027LFG

DMN3027LFG; ficiency power management applications. Features Low RDS(ON) – ensures on s tate losses are minimized Small form f actor thermally efficient package enabl es higher density end products Occupie s just 33% of the board area occupied b y SO-8 enabling smaller end product 10 0% UIS (Avalanche) Rated 100% Rg Teste d Lead-Free Finish; RoHS Compliant (No tes 1 & 2) Halogen .


Diodes DMN3027LFG

and Antimony Free. “Green” Device (N ote 3) Qualified to AEC-Q101 Standards for High Reliability Applications Ba cklighting DC-DC Converters Power Man agement Functions Top View POWERDI®33 33-8 Mechanical Data .


Diodes DMN3027LFG

.

Part

DMN3027LFG

Description

N-CHANNEL MOSFET



Feature


ADVANCE INNEFWORPRMOADTIUOCNT Green DMN 3027LFG N-CHANNEL ENHANCEMENT MODE MOSF ET POWERDI® Product Summary BVDSS 30 V RDS(ON) max 18.6mΩ @ VGS = 10V 26. 5mΩ @ VGS = 4.5V ID TA = +25°C 8.0A 6.5A Description This new generation MOSFET is designed to minimize the on-s tate resistance (RDS(ON)) and yet maint ain superior switching performance, mak ing it ideal for high-ef.
Manufacture

Diodes

Datasheet
Download DMN3027LFG Datasheet




 DMN3027LFG
Green DMN3027LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
30V
RDS(ON) max
18.6mΩ @ VGS = 10V
26.5mΩ @ VGS = 4.5V
ID
TA = +25°C
8.0A
6.5A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Features
Low RDS(ON) ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS (Avalanche) Rated
100% Rg Tested
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Backlighting
DC-DC Converters
Power Management Functions
Top View
POWERDI®3333-8
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
S Pin 1
S
S
G
D
G
D
D
D
D
Bottom View
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN3027LFG-7
DMN3027LFG-13
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2,000 / Tape & Reel
3,000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N37
POWERDI is a registered trademark of Diodes Incorporated.
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
N37 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 for 2015)
WW = Week Code (01 53)
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated




 DMN3027LFG
DMN3027LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
t10s
Steady
State
Continuous Drain Current (Note 6) VGS = 4.5V
t10s
Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
ID
IDM
IAR
EAR
Value
30
±25
5.3
4.2
8.0
6.3
9.5
7.7
6.5
4.9
7.8
6.2
70
18
16
Unit
V
V
A
A
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation (Note 6) t10s
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t10s
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
Symbol
PD
RθJA
PD
RθJA
PD
RθJA
TJ, TSTG
Max
1.0
130.6
2.07
62.5
3.0
43.8
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
Min
30
-
-
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.2
13.5
22
0.7
580
110
70
2.0
5.3
11.3
1.9
1.9
4.4
4.6
19.5
5.8
Max
-
100
±100
1.8
18.6
26.5
1.0
-
-
-
3.0
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250µA
nA VDS = 30V, VGS = 0V
nA VGS = ±25V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 10A
nC VGS = 10V, VDS = 15V,
ID = 10A
ns
ns VGS = 10V, VDS = 15V,
ns RL = 15Ω, RG = 6Ω
ns
POWERDI is a registered trademark of Diodes Incorporated.
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated




 DMN3027LFG
30.0
25.0
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
20.0
15.0
10.0
VGS = 3.5V
5.0
0.0
0
VGS = 3.0V
VGS = 2.5V
0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0.032
0.028
0.024
0.02
0.016
VGS = 4.5V
0.012
0.008
VGS = 10V
0.004
0
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.6
VGS = 10V, ID = 10A
1.4
1.2
VGS = 4.5V, ID = 5A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 5. On-Resistance Variation with Temperature
30
VDS = 5.0V
25
DMN3027LFG
20
15
10
5
TA = 125
TA = 150
TA = 85
TA = 25
0 TA = -55
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.05
0.045
0.04
0.035
VGS = 4.5V
TA = 125
TA = 150
0.03
0.025
0.02
0.015
0.01
TA = 85
TA = 25
TA = -55
0.005
0
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Temperature
0.04
0.035
0.03
0.025
VGS = 4.5V, ID = 5A
0.02
0.015
0.01
0.005
VGS = 10V, ID = 10A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated



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