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N-CHANNEL MOSFET. DMT3011LDT Datasheet

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N-CHANNEL MOSFET. DMT3011LDT Datasheet
















DMT3011LDT MOSFET. Datasheet pdf. Equivalent













Part

DMT3011LDT

Description

DUAL N-CHANNEL MOSFET



Feature


A D VNAEN CWEPDRIONDFUOCRTM A T I O N D MT3011LDT DUAL N-CHANNEL ENHANCEMENT MO DE MOSFET Product Summary Device Q1 Q 2 V(BR)DSS 30V 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 11.1m @ VGS = 10V 13.8mΩ @ VGS = 4.5V I D Max TA = +25°C 8A 6.3A 10.7A 9.6A F eatures 0.6mm Profile – Ideal for Lo w Profile Applications PCB Footprint o f 4mm2 Low Gate Threshold Vo.
Manufacture

Diodes

Datasheet
Download DMT3011LDT Datasheet


Diodes DMT3011LDT

DMT3011LDT; ltage Totally Lead-Free & Fully RoHS Co mpliant (Notes 1 & 2) Halogen and Anti mony Free. “Green” Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state r esistance (RDS(ON)), yet maintain super ior switching performance, making it id eal for high-efficiency power managemen t applications. Applications Mobile Co mputing Point of Load.


Diodes DMT3011LDT

Mechanical Data Case: V-DFN3030-8 (Ty pe K) Case Material: Molded Plastic, Green” Molding Compound. UL Flammab ility Classification Rating 94V-0 Mois ture Sensitivity: Level 1 per J-STD-020 Terminals: Fin .


Diodes DMT3011LDT

.





Part

DMT3011LDT

Description

DUAL N-CHANNEL MOSFET



Feature


A D VNAEN CWEPDRIONDFUOCRTM A T I O N D MT3011LDT DUAL N-CHANNEL ENHANCEMENT MO DE MOSFET Product Summary Device Q1 Q 2 V(BR)DSS 30V 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 11.1m @ VGS = 10V 13.8mΩ @ VGS = 4.5V I D Max TA = +25°C 8A 6.3A 10.7A 9.6A F eatures 0.6mm Profile – Ideal for Lo w Profile Applications PCB Footprint o f 4mm2 Low Gate Threshold Vo.
Manufacture

Diodes

Datasheet
Download DMT3011LDT Datasheet




 DMT3011LDT
DMT3011LDT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
30V
30V
RDS(ON) Max
20m@ VGS = 10V
32m@ VGS = 4.5V
11.1m@ VGS = 10V
13.8m@ VGS = 4.5V
ID Max
TA = +25°C
8A
6.3A
10.7A
9.6A
Features
0.6mm Profile Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
Mobile Computing
Point of Load
Mechanical Data
Case: V-DFN3030-8 (Type K)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.02 grams (Approximate)
PIN 1 PIN 1
Top View
Bottom View
V-DFN3030-8 (Type K)
5678
S2 S2 S2 G2
S1/D2
D1
D1 D1 D1 G1
4321
Bottom View
Internal Schematic
PIN 1
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT3011LDT-7
Case
V-DFN3030-8 (Type K)
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMT3011LDT
Document number: DS37955 Rev. 2 - 2
1 of 11
www.diodes.com
September 2015
© Diodes Incorporated




 DMT3011LDT
Marking Information
DMT3011LDT
T95
T95 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 14 for 2014)
WW = Week Code (01 to 53)
Maximum Ratings (Q1 N-Channel) (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH)
Avalanche Energy (L = 0.1mH)
Steady
State
TA = +25°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Value
30
±20
8
21.5
2
55
14
9.8
Unit
V
V
A
A
A
A
mJ
Maximum Ratings (Q2 N-Channel) (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty cycle = 1%)
Avalanche Current (L = 0.1mH)
Avalanche Energy (L = 0.1mH)
Steady
State
TA = +25°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
Value
30
+20
-16
10.7
28.9
2
80
18
16.2
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Total Power Dissipation (Note 5)
Operating and Storage Temperature Range
Steady State
TA = +25°C
Steady State
TC = +25°C
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
Symbol
RθJA
PD
RθJC
PD
TJ, TSTG
Value
65
1.9
9
13.9
-55 to +150
Unit
°C/W
W
°C/W
W
°C
DMT3011LDT
Document number: DS37955 Rev. 2 - 2
2 of 11
www.diodes.com
September 2015
© Diodes Incorporated




 DMT3011LDT
DMT3011LDT
Electrical Characteristics (Q1 N-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min Typ Max
30 — —
——
1
— — ±100
13
— — 20
— — 32
0.7 1.2
641
66
50
2.2
13.2
6
1.7
2.2
3.3
4.4
22.3
5.3
11.4
8.2
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
V VGS = 0V, IS = 6A
pF
pF VDS = 15V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 15V, ID = 10A
nC
nS
nS VGS = 10V, VDS = 15V,
nS RG = 6, ID = 1A
nS
nS
nC
IF = 11A, di/dt = 100A/μs
Electrical Characteristics (Q2 N-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
BVDSS
IDSS
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Min
30
1
Typ Max
——
-1
±100
3
11.1
13.8
0.7 1.2
748
447
43
1.0
13.8
6.4
2.2
2.2
3.5
5.0
8.6
1.4
18
7.7
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
V VGS = 0V, IS = 9A
pF
pF
VDS = 15V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 15V, ID = 14.4A
nC
ns
ns VGS = 10V, VDS = 15V,
ns RG = 1, ID = 10A
ns
ns
nC
IF = 10A, di/dt = 100A/μs
DMT3011LDT
Document number: DS37955 Rev. 2 - 2
3 of 11
www.diodes.com
September 2015
© Diodes Incorporated




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