DatasheetsPDF.com

N-CHANNEL MOSFET. DMNH4005SCT Datasheet

DatasheetsPDF.com

N-CHANNEL MOSFET. DMNH4005SCT Datasheet






DMNH4005SCT MOSFET. Datasheet pdf. Equivalent




DMNH4005SCT MOSFET. Datasheet pdf. Equivalent





Part

DMNH4005SCT

Description

N-CHANNEL MOSFET



Feature


Green DMNH4005SCT 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summar y BVDSS 40V RDS(ON) 4.0mΩ @ VGS = 1 0V ID TC = +25°C 150A Description Th is new generation Enhancement Mode MOSF ET is designed to minimize RDS(ON) and yet maintain superior switching perform ance, making it ideal for high efficien cy power management applications. Appl ications Motor Contro.
Manufacture

Diodes

Datasheet
Download DMNH4005SCT Datasheet


Diodes DMNH4005SCT

DMNH4005SCT; l Backlighting DC-DC Converters Power Management Functions Features Low In put Capacitance Low Input/Output Leaka ge Lead-Free Finish; RoHS Compliant (N otes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliabi lity An Automotive-Compliant Part is A vailable Under Separate Datasheet (DMNH 4005SCTQ) Mechanical D.


Diodes DMNH4005SCT

ata Case: TO220AB Case Material: Molde d Plastic, “Green” Molding Compound , UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Ann ealed over Copper Leadframe. Solderable per MIL-STD-202, .


Diodes DMNH4005SCT

.

Part

DMNH4005SCT

Description

N-CHANNEL MOSFET



Feature


Green DMNH4005SCT 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summar y BVDSS 40V RDS(ON) 4.0mΩ @ VGS = 1 0V ID TC = +25°C 150A Description Th is new generation Enhancement Mode MOSF ET is designed to minimize RDS(ON) and yet maintain superior switching perform ance, making it ideal for high efficien cy power management applications. Appl ications Motor Contro.
Manufacture

Diodes

Datasheet
Download DMNH4005SCT Datasheet




 DMNH4005SCT
Green DMNH4005SCT
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
40V
RDS(ON)
4.0mΩ @ VGS = 10V
ID
TC = +25°C
150A
Description
This new generation Enhancement Mode MOSFET is designed to
minimize RDS(ON) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH4005SCTQ)
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220AB
D
G
Top View
Bottom View
S
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMNH4005SCT
Case
TO220AB
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
4005SCT
YYWW
DMNH4005SCT
Document number: DS38096 Rev. 2 - 2
= Manufacturer’s Marking
4005SCT = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week (01 to 53)
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated




 DMNH4005SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS = 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Steady
State
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 6) L=1mH
Avalanche Energy (Note 6) L=1mH
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMNH4005SCT
Value
40
20
150
100
90
80
30
500
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Power Dissipation
Characteristic
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TC = +25°C
TC = +70°C
Symbol
PD
RθJC
TJ, TSTG
Value
165
100
0.9
-55 to +175
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
1
Typ
3.4
2846
742
242
1.9
48
23
9.5
11.5
6.6
12.1
18.3
4.9
29
24
Max
1
±100
3
4.0
1.2
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 32V, VGS = 0V
nA VGS = 16V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 20A
V VGS = 0V, IS = 1A
pF
VDS = 20V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDD = 20V, ID = 20A
ns VDD = 20V, VGS = 10V,
RG = 1, ID = 20A
ns
nC IF = 15A, di/dt = 100A/µs
DMNH4005SCT
Document number: DS38096 Rev. 2 - 2
2 of 7
www.diodes.com
July 2016
© Diodes Incorporated




 DMNH4005SCT
50.0
40.0
30.0
VGS=4.5V
VGS=5.0V
VGS=10.0V
VGS=4.0V
20.0
10.0
VGS=3.5V
0.0
0
VGS=3.0V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0.004
30
VDS=5V
25
DMNH4005SCT
20
15
10
5
0
1
0.06
125
150
175
85
25
-55
2345
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
0.0035
0.003
VGS=10V
0.05
0.04
0.0025
0.03
0.002
0.0015
0.02
0.01
ID=20A
0.001
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.008
0.006
VGS= 10V
125150
175
0.004
0.002
85
25
-55
0
1 6 11 16 21 26 31
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
2
1.8
1.6
1.4
1.2
VGS=10V, ID=20A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMNH4005SCT
Document number: DS38096 Rev. 2 - 2
3 of 7
www.diodes.com
July 2016
© Diodes Incorporated



Recommended third-party DMNH4005SCT Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)