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N-CHANNEL MOSFET. DMT4002LPS Datasheet

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N-CHANNEL MOSFET. DMT4002LPS Datasheet






DMT4002LPS MOSFET. Datasheet pdf. Equivalent




DMT4002LPS MOSFET. Datasheet pdf. Equivalent





Part

DMT4002LPS

Description

N-CHANNEL MOSFET



Feature


Product Summary BVDSS 40V RDS(ON) max 1.8mΩ @ VGS = 10V 3.1mΩ @ VGS = 4.5 V ID TC = +25°C (Note 9) 100A 100A G reen DMT4002LPS 40V N-CHANNEL ENHANCEME NT MODE MOSFET POWERDI Features 100% U nclamped Inductive Switching – Ensure s More Reliable and Robust End Applicat ion Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) –.
Manufacture

Diodes

Datasheet
Download DMT4002LPS Datasheet


Diodes DMT4002LPS

DMT4002LPS; Minimizes On State Losses <1.1mm Packa ge Profile – Ideal for Thin Applicati ons Lead-Free Finish; RoHS Compliant ( Notes 1 & 2) Halogen and Antimony Free . “Green” Device (Note 3) Descript ion and Applications This MOSFET has be en designed to minimize the on-state re sistance (RDS(ON)) and yet maintain sup erior switching performance, making it ideal for high efficienc.


Diodes DMT4002LPS

y power management applications. Engine Management Systems Body Control Elect ronics DC-DC Converters Mechanical Da ta Case: PowerDI5060-8 (Type K) Case Material: Molded Plastic, ―Green‖ M olding Compou .


Diodes DMT4002LPS

.

Part

DMT4002LPS

Description

N-CHANNEL MOSFET



Feature


Product Summary BVDSS 40V RDS(ON) max 1.8mΩ @ VGS = 10V 3.1mΩ @ VGS = 4.5 V ID TC = +25°C (Note 9) 100A 100A G reen DMT4002LPS 40V N-CHANNEL ENHANCEME NT MODE MOSFET POWERDI Features 100% U nclamped Inductive Switching – Ensure s More Reliable and Robust End Applicat ion Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) –.
Manufacture

Diodes

Datasheet
Download DMT4002LPS Datasheet




 DMT4002LPS
Product Summary
BVDSS
40V
RDS(ON) max
1.8mΩ @ VGS = 10V
3.1mΩ @ VGS = 4.5V
ID
TC = +25°C
(Note 9)
100A
100A
Green DMT4002LPS
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Features
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Mechanical Data
Case: PowerDI5060-8 (Type K)
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8 (Type K)
Top View
Pin1
Bottom View
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT4002LPS-13
Case
PowerDI5060-8 (Type K)
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
T4002LS
YY WW
= Manufacturers Marking
T4002LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
S S SG
PowerDI is a registered trademark of Diodes Incorporated.
DMT4002LPS
Document number: DS38972 Rev. 2 - 2
1 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMT4002LPS
DMT4002LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Notes 6, 9)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TC = +25°C
TC = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
Value
40
±20
100
100
200
85
48
115
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
2.3
55
104
1.2
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
1
Typ
1.3
2
6771
2165
176
0.85
116.1
55.2
20.3
22.7
11.4
22.9
62.5
28
58.6
107
Max
1
±100
3
1.8
3.1
1.2
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 10V, ID = 25A
VGS = 4.5V, ID = 25A
V VGS = 0V, IS = 20A
pF
VDS = 20V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 20V, ID = 25A,
ns
VDD = 20V, VGS = 10V,
ID = 25A, RG = 3Ω
ns
nC
IF = 25A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
PowerDI is a registered trademark of Diodes Incorporated.
DMT4002LPS
Document number: DS38972 Rev. 2 - 2
2 of 7
www.diodes.com
August 2016
© Diodes Incorporated




 DMT4002LPS
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
3.0
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 10V
VGS = 3.0V
VGS = 2.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
30
VDS = 5.0V
25
DMT4002LPS
20
15
10
5
0
0
5
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
1234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
2.5
2.0 VGS = 4.5V
1.5
1.0 VGS = 10V
0.5
4
3 ID = 25A
2
1
0.0
0 10 20 30 40 50 60 70 80 90 100
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
3
VGS = 10V
2.5
TJ = 150oC
TJ = 125oC
2
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2
1.8
1.6 VGS = 10V, ID = 25A
1.4
1.5 1.2
TJ = 85oC
1
TJ = 25oC
1
VGS = 4.5V, ID = 25A
TJ = -55oC
0.8
0.5
0.6
0
0 5 10 15 20
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current
and Temperature
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
PowerDI is a registered trademark of Diodes Incorporated.
DMT4002LPS
Document number: DS38972 Rev. 2 - 2
3 of 7
www.diodes.com
August 2016
© Diodes Incorporated



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