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N-CHANNEL MOSFET. DMT6002LPS Datasheet

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N-CHANNEL MOSFET. DMT6002LPS Datasheet






DMT6002LPS MOSFET. Datasheet pdf. Equivalent




DMT6002LPS MOSFET. Datasheet pdf. Equivalent





Part

DMT6002LPS

Description

N-CHANNEL MOSFET



Feature


Product Summary BVDSS 60V RDS(ON) Max 2mΩ @ VGS = 10V 3mΩ @ VGS = 6V ID TC = +25°C (Note 9) 100A 100A DMT6002 LPS Green 60V N-CHANNEL ENHANCEMENT MOD E MOSFET POWERDI Features 100% Unclamp ed Inductive Switching – Ensures More Reliable and Robust End Application T hermally Efficient Package – Cooler R unning Applications High Conversion Ef ficiency Low RDS(ON) – Min.
Manufacture

Diodes

Datasheet
Download DMT6002LPS Datasheet


Diodes DMT6002LPS

DMT6002LPS; imizes On-State Losses <1.1mm Package P rofile – Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Note s 1 & 2) Halogen and Antimony Free. Green” Device (Note 3) Description and Applications This MOSFET is designe d to minimize the on-state resistance ( RDS(ON)), yet maintain superior switchi ng performance, making it ideal for hig h efficiency power manag.


Diodes DMT6002LPS

ement applications. Switching Synchron ous Rectification DC-DC Converters Me chanical Data Case: PowerDI5060-8 (Typ e K) Case Material: Molded Plastic, Green‖ Molding Compound. UL Flammabi lity Classi .


Diodes DMT6002LPS

.

Part

DMT6002LPS

Description

N-CHANNEL MOSFET



Feature


Product Summary BVDSS 60V RDS(ON) Max 2mΩ @ VGS = 10V 3mΩ @ VGS = 6V ID TC = +25°C (Note 9) 100A 100A DMT6002 LPS Green 60V N-CHANNEL ENHANCEMENT MOD E MOSFET POWERDI Features 100% Unclamp ed Inductive Switching – Ensures More Reliable and Robust End Application T hermally Efficient Package – Cooler R unning Applications High Conversion Ef ficiency Low RDS(ON) – Min.
Manufacture

Diodes

Datasheet
Download DMT6002LPS Datasheet




 DMT6002LPS
Product Summary
BVDSS
60V
RDS(ON) Max
2m@ VGS = 10V
3m@ VGS = 6V
ID
TC = +25°C
(Note 9)
100A
100A
DMT6002LPS
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Features
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Thermally Efficient Package Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Switching
Synchronous Rectification
DC-DC Converters
Mechanical Data
Case: PowerDI5060-8 (Type K)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8 (Type K)
SD
SD
SD
Top View
Pin1
Bottom View
Internal Schematic
GD
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT6002LPS-13
Case
PowerDI5060-8 (Type K)
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
T6002LS
YY WW
=Manufacturers Marking
T6002LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
S S SG
POWERDI is a registered trademark of Diodes Incorporated.
DMT6002LPS
Document number: DS39090 Rev. 1 - 2
1 of 7
www.diodes.com
September 2016
© Diodes Incorporated




 DMT6002LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 3mH
Avalanche Energy, L = 3mH
TC = +25°C
(Note 9)
TC = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMT6002LPS
Value
60
±20
100
100
200
100
14
294
Unit
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.3
55
167
0.9
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
1
Typ
1.5
2.2
6555
2264
187
0.7
130.8
63.6
20.8
29.4
11.2
10.8
44
19.5
61.8
123
Max
1
±100
3
2
3
1.2
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 48V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 50A
VGS = 6V, ID = 50A
V VGS = 0V, IS = 50A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = 30V, ID = 50A
ns
VDD = 20V, VGS = 10V,
ID = 50A, Rg = 2.5
ns
nC
IF = 50A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
POWERDI is a registered trademark of Diodes Incorporated.
DMT6002LPS
Document number: DS39090 Rev. 1 - 2
2 of 7
www.diodes.com
September 2016
© Diodes Incorporated




 DMT6002LPS
100.0
80.0
60.0
40.0
VGS = 4.0V
VGS=4.5V
VGS = 5.0V
VGS = 10.0V
VGS = 3.5V
20.0
0.0
0
5
VGS = 3.0V
1234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
4
3 VGS = 4.5V
2
VGS = 10V
1
0
0 20 40 60 80 100
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.004
VGS = 10V
0.003
0.002
0.001
150
125
85
25
-55
0
0 20 40 60 80 100
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMT6002LPS
30
VDS = 5V
25
20
15
10
5
0
1
10
9
8
7
6
5
4
3
2
1
0
2
150
125
85
25
-55
1.5 2 2.5 3 3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
4
ID = 90A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
2.2
2
1.8
1.6 VGS = 10V, ID = 50A
1.4
1.2
1
0.8
0.6 VGS = 4.5V, ID = 50A
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMT6002LPS
Document number: DS39090 Rev. 1 - 2
3 of 7
www.diodes.com
September 2016
© Diodes Incorporated



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