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N-CHANNEL MOSFET. DMTH8012LPSQ Datasheet

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N-CHANNEL MOSFET. DMTH8012LPSQ Datasheet






DMTH8012LPSQ MOSFET. Datasheet pdf. Equivalent




DMTH8012LPSQ MOSFET. Datasheet pdf. Equivalent





Part

DMTH8012LPSQ

Description

N-CHANNEL MOSFET



Feature


Green DMTH8012LPSQ 80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Produc t Summary BVDSS 80V RDS(ON) 17mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID TC = +25°C 72A 62A Description and Applica tions This MOSFET is designed to meet t he stringent requirements of automotive applications. It is qualified to AECQ1 01, supported by a PPAP and is ideal fo r use in: Synchronous R.
Manufacture

Diodes

Datasheet
Download DMTH8012LPSQ Datasheet


Diodes DMTH8012LPSQ

DMTH8012LPSQ; ectifier Backlighting Power Management Functions DC-DC Converters Features Rated to +175C – Ideal for High A mbient Temperature Environments High C onversion Efficiency Low RDS(ON) – M inimizes On State Losses Low Input Cap acitance Fast Switching Speed Lead-Fr ee Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green Device (Note 3) Qualified.


Diodes DMTH8012LPSQ

to AEC-Q101 Standards for High Reliabil ity PPAP Capable (Note 4) Mechanical D ata Case: PowerDI5060-8 Case Material : Molded Plastic, “Green” Molding C ompound. UL Flammability Classification Ra .


Diodes DMTH8012LPSQ

.

Part

DMTH8012LPSQ

Description

N-CHANNEL MOSFET



Feature


Green DMTH8012LPSQ 80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Produc t Summary BVDSS 80V RDS(ON) 17mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V ID TC = +25°C 72A 62A Description and Applica tions This MOSFET is designed to meet t he stringent requirements of automotive applications. It is qualified to AECQ1 01, supported by a PPAP and is ideal fo r use in: Synchronous R.
Manufacture

Diodes

Datasheet
Download DMTH8012LPSQ Datasheet




 DMTH8012LPSQ
Green DMTH8012LPSQ
80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
BVDSS
80V
RDS(ON)
17mΩ @ VGS = 10V
21mΩ @ VGS = 4.5V
ID
TC = +25°C
72A
62A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AECQ101, supported by a
PPAP and is ideal for use in:
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
Features
Rated to +175C Ideal for High Ambient Temperature
Environments
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
Pin1
Top View
Bottom View
Internal Schematic
S
S
S
G
Top View
Pin Configuration
D
D
D
D
Ordering Information (Note 5)
Notes:
Part Number
Case
Packaging
DMTH8012LPSQ-13
PowerDI5060-8
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H8012LS
YY WW
= Manufacturers Marking
H8012LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year
(ex: 15 = 2015)
WW = Week Code (01 to 53)
S S SG
POWERDI is a registered trademark of Diodes Incorporated.
DMTH8012LPSQ
Document number: DS38376 Rev.1 - 2
1 of 7
www.diodes.com
March 2016
© Diodes Incorporated




 DMTH8012LPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current, VGS = 10V (Note 6)
Continuous Drain Current, VGS = 10V (Note 7)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TA = +25C
TA = +70C
TC = +25C
TC = +70C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH8012LPSQ
Value
80
±20
10
8.4
72
60
90
80
11.6
10.2
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
2.6
57
136
1.1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
IDSS
IGSS
80
-
-
--
-1
- ±100
VGS(TH)
RDS(ON)
VSD
1
-
-
-
-
12.3
15.1
0.9
3
17
21
1.2
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
- 2051 -
- 189.9 -
- 24.6 -
- 0.44 -
- 24.1 -
- 46.8 -
- 6.9 -
- 12.2 -
- 5.8 -
- 6.5 -
- 17.3 -
- 4.7 -
- 33.5 -
- 38.9 -
Unit Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 64V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 12A
VGS = 4.5V, ID = 6A
V VGS = 0V, IS = 20A
pF VDS = 40V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 40V, ID = 12A
ns
VDD = 40V, VGS = 10V,
ID = 12A, RG = 1.6Ω
ns
nC
IF = 12A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMTH8012LPSQ
Document number: DS38376 Rev.1 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated




 DMTH8012LPSQ
DMTH8012LPSQ
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
0.020
VGS = 10.0V
VGS = 6.0V
VGS = 5.0V
VGS=4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
30
VDS = 5.0V
25
20
15
10
5
0
1
0.03
150oC
175oC
125oC
85oC
25oC
-55oC
234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.018
0.016
0.014
0.012
0.010
0.008
VGS = 4.5V
VGS = 10V
0.026
0.022
0.018
0.014
ID = 6A
ID = 12A
0.006
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.01
2
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
0.03
0.025
VGS = 10V
0.02
0.015
175oC
150oC
125oC
85oC
0.01
25oC
0.005
-55oC
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
2.5
2.3
2.1
1.9
1.7 VGS = 10V, ID = 12A
1.5
1.3
1.1 VGS = 4.5V, ID = 6A
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMTH8012LPSQ
Document number: DS38376 Rev.1 - 2
3 of 7
www.diodes.com
March 2016
© Diodes Incorporated



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