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P-CHANNEL MOSFET. DMP4025LSSQ Datasheet

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P-CHANNEL MOSFET. DMP4025LSSQ Datasheet
















DMP4025LSSQ MOSFET. Datasheet pdf. Equivalent













Part

DMP4025LSSQ

Description

P-CHANNEL MOSFET



Feature


ADVANCE INFORMATION Product Summary BV DSS -40V RDS(ON) Max 25mΩ @ VGS = -1 0V 45mΩ @ VGS = -4.5V ID Max (A) TA = +25°C -8.0A -6.0A DMP4025LSSQ 40V P -CHANNEL ENHANCEMENT MODE MOSFET Featur es and Benefits Low RDS(ON) – Minimi zes Conduction Losses Fast Switching S peed – Minimizes Switching Losses To tally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and .
Manufacture

Diodes

Datasheet
Download DMP4025LSSQ Datasheet


Diodes DMP4025LSSQ

DMP4025LSSQ; Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4 ) Description and Applications This MO SFET is designed to meet the stringent requirements of Automotive applications . It is qualified to AEC-Q101, supporte d by a PPAP and is ideal for use in: M otor Control Backlighting DC-DC Conve rters Printer Equipme.


Diodes DMP4025LSSQ

nt Mechanical Data Case: SO-8 Case Ma terial: Molded Plastic, “Green” Mol ding Compound. UL Flammability Classifi cation Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Ter minals: F .


Diodes DMP4025LSSQ

.





Part

DMP4025LSSQ

Description

P-CHANNEL MOSFET



Feature


ADVANCE INFORMATION Product Summary BV DSS -40V RDS(ON) Max 25mΩ @ VGS = -1 0V 45mΩ @ VGS = -4.5V ID Max (A) TA = +25°C -8.0A -6.0A DMP4025LSSQ 40V P -CHANNEL ENHANCEMENT MODE MOSFET Featur es and Benefits Low RDS(ON) – Minimi zes Conduction Losses Fast Switching S peed – Minimizes Switching Losses To tally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and .
Manufacture

Diodes

Datasheet
Download DMP4025LSSQ Datasheet




 DMP4025LSSQ
Product Summary
BVDSS
-40V
RDS(ON) Max
25m@ VGS = -10V
45m@ VGS = -4.5V
ID Max (A)
TA = +25°C
-8.0A
-6.0A
DMP4025LSSQ
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low RDS(ON) Minimizes Conduction Losses
Fast Switching Speed Minimizes Switching Losses
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Motor Control
Backlighting
DC-DC Converters
Printer Equipment
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
Top View
Pin-Out Top View
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMP4025LSSQ-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P4025LS
YY WW
= Manufacturer’s Marking
P4025LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
DMP4025LSSQ
Document Number: DS38881 Rev: 1 - 2
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated




 DMP4025LSSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current
VGS = -10V
Pulsed Drain Current
VGS = -10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Note 7)
TA = +70°C
(Note 7)
(Note 6)
(Note 8)
(Note 8)
(Note 8)
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
DMP4025LSSQ
Value
-40
20
-8.0
-6.9
-6.0
-30
-8.0
-30
Units
V
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 9)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1.52
2.4
82
52
48.85
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
gFS
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
Min
-40
-0.8


Typ
-1.3
18
30
16.6
-0.7
1,640
179
128
6.43
14.0
33.7
5.5
7.3
6.9
14.7
53.7
30.9
Max
-1.0
100
-1.8
25
45
-1.0


Unit
Test Condition
V ID = -250µA, VGS = 0V
µA VDS = -40V, VGS = 0V
nA VGS = 20V, VDS = 0V
V ID = -250µA, VDS = VGS
mVGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
S VDS = -5V, ID = -3A
V IS = -1A, VGS = 0V
pF
VDS = -20V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
nC
VGS = -10V
VDS = -20V
ID = -3A
ns VDD = -20V, VGS = -10V
ID = -3A
Notes:
6. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note (6), except the device is surface mounted on 25mm x 25mm x 1.6mm FR4 PCB.
8. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300µs pulse width by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to production testing.
DMP4025LSSQ
Document Number: DS38881 Rev: 1 - 2
2 of 7
www.diodes.com
May 2016
© Diodes Incorporated




 DMP4025LSSQ
DMP4025LSSQ
Thermal Characteristics
1
D = 0.7
D = 0.5
D = 0.3
100
90
80
70
Single Pulse
RJA = 82C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
60
50
40
30
20
10
0
0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
0.1 D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01 D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
RJA(t) = r(t) * RJA
RJA = 83°C/W
Duty Cycle, D = t1/ t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 2 Transient Thermal Resistance
10
100 1,000
DMP4025LSSQ
Document Number: DS38881 Rev: 1 - 2
3 of 7
www.diodes.com
May 2016
© Diodes Incorporated




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