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P-Channel MOSFET. DMG2305UXQ Datasheet

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P-Channel MOSFET. DMG2305UXQ Datasheet






DMG2305UXQ MOSFET. Datasheet pdf. Equivalent




DMG2305UXQ MOSFET. Datasheet pdf. Equivalent





Part

DMG2305UXQ

Description

P-Channel MOSFET



Feature


DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MO SFET Product Summary BVDSS -20V RDS( ON) Max 52mΩ @VGS = -4.5V 100mΩ @VG S = -2.5V Package SOT23 ID TA = +25° C -5.0A -3.6A Features Low On-Resista nce Low Input Capacitance Fast Switch ing Speed Totally Lead-Free & Fully Ro HS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Not e 3) Qualified to AEC-Q101.
Manufacture

Diodes

Datasheet
Download DMG2305UXQ Datasheet


Diodes DMG2305UXQ

DMG2305UXQ; Standards for High Reliability PPAP Ca pable (Note 4) Description and Applica tions This MOSFET is designed to meet t he stringent requirements of Automotive applications. It is qualified to AEC-Q 101, supported by a PPAP and is ideal f or use in: Backlighting Power Managem ent Functions DC-DC Converters Motor Control Mechanical Data Case: SOT23 Case Material: Mol.


Diodes DMG2305UXQ

ded Plastic, “Green” Molding Compoun d. UL Flammability Classification Ratin g 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – M atte Tin Annealed over Copper Leadframe . Solderable per MIL-STD-202, Method 20 8 Terminals Connections: See Diagram B elow Weight: 0.009 grams (Approximate) D D Top View G S Internal Schematic GS Top View Ordering .


Diodes DMG2305UXQ

Information (Note 5) Notes: Part Numbe r Compliance Case Packaging DMG2305 UXQ-7 Automotive SOT23 3,000/Tape & Reel DMG2305UXQ-13 Automotive SOT23 10,000/Tape & Reel 1. No purposely ad ded lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863 /EU (RoHS 3) compliant. 2. See https:// www.diodes.com/quality/lead-free/ for m ore information ab.

Part

DMG2305UXQ

Description

P-Channel MOSFET



Feature


DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MO SFET Product Summary BVDSS -20V RDS( ON) Max 52mΩ @VGS = -4.5V 100mΩ @VG S = -2.5V Package SOT23 ID TA = +25° C -5.0A -3.6A Features Low On-Resista nce Low Input Capacitance Fast Switch ing Speed Totally Lead-Free & Fully Ro HS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Not e 3) Qualified to AEC-Q101.
Manufacture

Diodes

Datasheet
Download DMG2305UXQ Datasheet




 DMG2305UXQ
DMG2305UXQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
-20V
RDS(ON) Max
52m@VGS = -4.5V
100m@VGS = -2.5V
Package
SOT23
ID
TA = +25°C
-5.0A
-3.6A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
D
D
Top View
G
S
Internal Schematic
GS
Top View
Ordering Information (Note 5)
Notes:
Part Number
Compliance
Case
Packaging
DMG2305UXQ-7
Automotive
SOT23
3,000/Tape & Reel
DMG2305UXQ-13
Automotive
SOT23
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
23X
23X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
~
2016
2017
2018
2019
2020
W~ DE FGH
Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
1 2 3 4 5 6 78 9OND
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
1 of 6
www.diodes.com
September 2018
© Diodes Incorporated




 DMG2305UXQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current (Note 7)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
DMG2305UXQ
Value
-20
±8
-4.2
-3.3
-5.0
-4.0
-15
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady State
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.4
90
64
33
-55 to +150
Unit
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (TJ = +25°C)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
|YFS|
Ciss
Coss
Crss
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
Min
-20
-0.5

Typ
40
52
68
9
808
85
77
15.2
10.2
1.3
2.2
10.8
13.7
79.3
34.7
Max
-1.0
±100
-0.9
52
100
200

Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.2A
mVGS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2A
S VDS = -5V, ID = -4A
pF
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
pF
VGS = 0V, VDS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -4V,
nC ID = -3.5A
ns
ns VDS = -4V, VGS = -4.5V,
ns RG = 6, ID = -1A
ns
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
2 of 6
www.diodes.com
September 2018
© Diodes Incorporated




 DMG2305UXQ
DMG2305UXQ
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
0.1
VGS = -8.0V
VGS = -4.5V
VGS = -3.0V
VGS = -2.0V
VGS = -2.5V
VGS = -1.8V
VGS = -1.5V
VGS = -1.2V
1234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.08
0.06
VGS = -2.5V
0.04
0.02
VGS = -4.5V
0
0
1.6
1.4
1.2
5 10 15
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = -2.5V
ID = -5.0A
20
VGS = -4.5V
ID = -10A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
20
VDS = -5.0V
NT(A) 15
RE
R
U
C
10
N
AI
R
D
,
-I
D
5
TA = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
TA = 125°C
0
0 0.5
1 1.5
2 2.5
3
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
) 0.08
(E VGS = -4.5V
C
N
0.07
TA
S
ESI
0.06
R
N- 0.05
O
E
C
R
0.04
U
O
N-S 0.03
RAI
D
0.02
, N)
O
S(
0.01
RD
0
05
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
10 15 20
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.1
0.09
0.08
0.07
VGS = -2.5V
ID = -5A
0.06
0.05
0.04
0.03
VGS = -4.5V
ID = -10A
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
3 of 6
www.diodes.com
September 2018
© Diodes Incorporated



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