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P-Channel MOSFET. DMP2305UVT Datasheet

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P-Channel MOSFET. DMP2305UVT Datasheet






DMP2305UVT MOSFET. Datasheet pdf. Equivalent




DMP2305UVT MOSFET. Datasheet pdf. Equivalent





Part

DMP2305UVT

Description

P-Channel MOSFET



Feature


A Product Line of Diodes Incorporated DM P2305UVT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V Max RDS(on) (Note 6) 60mΩ @ VGS = -4 .5V 90mΩ @ VGS = -2.5V 113mΩ @ VGS = -1.8V Max ID TA = 25°C -4.23A -3.49A -3.11A Description This new generation MOSFET has been designed to minimize t he onstate resistance (RDS(on)) and yet maintain superior swi.
Manufacture

Diodes

Datasheet
Download DMP2305UVT Datasheet


Diodes DMP2305UVT

DMP2305UVT; tching performance, making it ideal for high efficiency power management applic ations. Applications • DC-DC Convert ers • Motor Control • Power managem ent functions • Analog Switch TSOT26 D1 D2 Features • Low Input Capacit ance • Low On-Resistance • Fast Swi tching Speed • Totally Lead-Free & Fu lly RoHS compliant (Notes 1 & 2) • Ha logen and Antimony Free. “Green” Dev.


Diodes DMP2305UVT

ice (Note 3) • Qualified to AEC-Q101 S tandards for High Reliability Mechanica l Data • Case: TSOT26 • Case Materi al: Molded Plastic, “Green” Molding Compound. UL Flammability Classificati on Rating 94V-0 • Moisture Sensitivi .


Diodes DMP2305UVT

.

Part

DMP2305UVT

Description

P-Channel MOSFET



Feature


A Product Line of Diodes Incorporated DM P2305UVT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V Max RDS(on) (Note 6) 60mΩ @ VGS = -4 .5V 90mΩ @ VGS = -2.5V 113mΩ @ VGS = -1.8V Max ID TA = 25°C -4.23A -3.49A -3.11A Description This new generation MOSFET has been designed to minimize t he onstate resistance (RDS(on)) and yet maintain superior swi.
Manufacture

Diodes

Datasheet
Download DMP2305UVT Datasheet




 DMP2305UVT
A Product Line of
Diodes Incorporated
DMP2305UVT
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-20V
Max RDS(on)
(Note 6)
60mΩ @ VGS = -4.5V
90mΩ @ VGS = -2.5V
113mΩ @ VGS = -1.8V
Max ID
TA = 25°C
-4.23A
-3.49A
-3.11A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Motor Control
Power management functions
Analog Switch
TSOT26
D1
D2
Features
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Finish – Matte Tin annealed over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0013 grams (approximate)
6D
5D
D
G
Top View
G3
4S
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2305UVT-7
DMP2305UVT-13
Marking
2305
2305
Reel size (inches)
7
13
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
2305
2305 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 8
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
August 2012
© Diodes Incorporated




 DMP2305UVT
A Product Line of
Diodes Incorporated
DMP2305UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -2.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
-20
±8
-4.23
-2.98
-3.49
-2.79
-4.23
-16
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Value
1.25
1.64
100
76
14
-55 to 150
Units
W
°C/W
°C
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
2 of 8
www.diodes.com
August 2012
© Diodes Incorporated




 DMP2305UVT
A Product Line of
Diodes Incorporated
DMP2305UVT
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
100
80
Single Pulse
RθJA = 110°C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
60
40
20
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Figure 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 110°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 2 Transient Thermal Resistance
10
100
1,000
DMP2305UVT
Document number: DS35986 Rev. 1 - 2
3 of 8
www.diodes.com
August 2012
© Diodes Incorporated



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