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P-Channel MOSFET. DMP4013LFGQ Datasheet

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P-Channel MOSFET. DMP4013LFGQ Datasheet






DMP4013LFGQ MOSFET. Datasheet pdf. Equivalent




DMP4013LFGQ MOSFET. Datasheet pdf. Equivalent





Part

DMP4013LFGQ

Description

P-Channel MOSFET



Feature


ADVANCE INFORMATION DMP4013LFGQ 40V P-C HANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary BVDSS -40V RDS(ON) M ax 13mΩ @ VGS = -10V 18mΩ @ VGS = - 4.5V ID Max TA = +25°C -10.3A -8.8A Features and Benefits Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient P ackage Enables Higher Density End Produ cts Occupies 33% of the .
Manufacture

Diodes

Datasheet
Download DMP4013LFGQ Datasheet


Diodes DMP4013LFGQ

DMP4013LFGQ; Board Area Occupied by SO-8, Enabling Sm aller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal ogen and Antimony Free. “Green” Dev ice (Note 3) Qualified to AEC-Q101 Sta ndards for High Reliability PPAP Capab le (Note 4) Description and Applicatio ns This MOSFET is designed to meet the stringent requirements of Automotive ap plications. It is qual.


Diodes DMP4013LFGQ

ified to AEC-Q101, supported by a PPAP a nd is ideal for use in: Reverse Polari ty Protection Power Management Functio ns DC-DC Converters Mechanical Data Case: PowerDI®3333-8 Case Material: M olded Plastic, "G .


Diodes DMP4013LFGQ

.

Part

DMP4013LFGQ

Description

P-Channel MOSFET



Feature


ADVANCE INFORMATION DMP4013LFGQ 40V P-C HANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary BVDSS -40V RDS(ON) M ax 13mΩ @ VGS = -10V 18mΩ @ VGS = - 4.5V ID Max TA = +25°C -10.3A -8.8A Features and Benefits Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient P ackage Enables Higher Density End Produ cts Occupies 33% of the .
Manufacture

Diodes

Datasheet
Download DMP4013LFGQ Datasheet




 DMP4013LFGQ
DMP4013LFGQ
40V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
BVDSS
-40V
RDS(ON) Max
13m@ VGS = -10V
18m@ VGS = -4.5V
ID Max
TA = +25°C
-10.3A
-8.8A
Features and Benefits
Low RDS(ON) Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies 33% of the Board Area Occupied by SO-8, Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Reverse Polarity Protection
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8
S Pin 1
S
S
G
D
D
D
D
D
Bottom View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMP4013LFGQ-7
DMP4013LFGQ-13
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI3333-8
P13
P13= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 ~ 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMP4013LFGQ
Document number: DS38779 Rev. 1 - 2
1 of 7
www.diodes.com
April 2016
© Diodes Incorporated




 DMP4013LFGQ
DMP4013LFGQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
t<10s
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Value
-40
±20
-10.3
-8.3
-13.7
-11
80
2.6
34
58
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1
123
69
2.1
60
34
3.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
-40
-1
Typ
9.4
12.3
-0.7
3,426
283
235
4.7
32.5
68.6
8.2
9.9
5.3
20
126
83
19.5
9.8
Max
-1
±100
-3
13
18
-1.2
Unit
Test Condition
V VGS = 0V, ID = -250μA
µA VDS = -40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -10A
VGS = -4.5V, ID = -8A
V VGS = 0V, IS = -1A
pF
pF VDS = -20V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -20V, ID = -10A
nC
ns
ns VDD = -20V, VGEN = -10V,
ns RG = 3, ID = -10A
ns
ns
nC
IF = -10A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP4013LFGQ
Document number: DS38779 Rev. 1 - 2
2 of 7
www.diodes.com
April 2016
© Diodes Incorporated




 DMP4013LFGQ
DMP4013LFGQ
30.0
25.0
20.0
15.0
VGS = -10V
VGS = -4.5V
VGS = -4.0V
VGS = -3.5V
VGS = -3.0V
VGS = -2.5V
30
VDS = -5.0V
25
20
15
10.0
5.0
VGS = -2.0V
0.0 0
0.016
12 34
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.014
0.012
0.01
VGS = -4.5V
VGS = -10V
0.008
10
5
0
0.5
0.06
0.05
0.04
TA = 150C
TA = 125C
TA = 85C
TA = 25C
TA = -55C
1 1.5
2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
ID = 10A
ID = 8A
0.03
0.02
0.01
0.006 0
0.02
5 10 15 20 25
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.018
VGS = -10V
TA = 150C
0.016
TA = 125C
30
0.014
0.012
0.01
TA = 85C
TA = 25C
0.008
0.006
TA = -55C
0.004
0
5 10 15 20 25
ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0
0
1.8
1.6
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
VGS = -10V
ID = -10A
1.4
VGS = -4.5V
ID = -8A
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMP4013LFGQ
Document number: DS38779 Rev. 1 - 2
3 of 7
www.diodes.com
April 2016
© Diodes Incorporated



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