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P-Channel MOSFET. DMP4015SSSQ Datasheet

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P-Channel MOSFET. DMP4015SSSQ Datasheet






DMP4015SSSQ MOSFET. Datasheet pdf. Equivalent




DMP4015SSSQ MOSFET. Datasheet pdf. Equivalent





Part

DMP4015SSSQ

Description

P-Channel MOSFET



Feature


NEW PRODUCT DMP4015SSSQ P-CHANNEL ENHAN CEMENT MODE MOSFET Product Summary V( BR)DSS -40V RDS(ON) Max 11mΩ @ VGS = -10V 15mΩ @ VGS = -4.5V ID TA = +25 °C -10.1A -8.8A Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production Low Input Capacita nce Totally Lead-Free & Fully RoHS Com pliant (Notes 1 & 2) Halogen and Antim ony Free. “Green” Devic.
Manufacture

Diodes

Datasheet
Download DMP4015SSSQ Datasheet


Diodes DMP4015SSSQ

DMP4015SSSQ; e (Note 3) Qualified to AEC-Q101 Standa rds for High Reliability PPAP Capable (Note 4) Description This new generati on MOSFET is designed to minimize the o n-state resistance (RDS(ON)), yet maint ain superior switching performance, mak ing it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Func tions Analog Swit.


Diodes DMP4015SSSQ

ch Mechanical Data Case: SO-8 Case Ma terial: Molded Plastic, “Green” Mol ding Compound. UL Flammability Classifi cation Rating 94V-0 Moisture Sensitivi ty: Level 1 per J-STD-020 Terminal Con nections: See Di .


Diodes DMP4015SSSQ

.

Part

DMP4015SSSQ

Description

P-Channel MOSFET



Feature


NEW PRODUCT DMP4015SSSQ P-CHANNEL ENHAN CEMENT MODE MOSFET Product Summary V( BR)DSS -40V RDS(ON) Max 11mΩ @ VGS = -10V 15mΩ @ VGS = -4.5V ID TA = +25 °C -10.1A -8.8A Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production Low Input Capacita nce Totally Lead-Free & Fully RoHS Com pliant (Notes 1 & 2) Halogen and Antim ony Free. “Green” Devic.
Manufacture

Diodes

Datasheet
Download DMP4015SSSQ Datasheet




 DMP4015SSSQ
DMP4015SSSQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-40V
RDS(ON) Max
11m@ VGS = -10V
15m@ VGS = -4.5V
ID
TA = +25°C
-10.1A
-8.8A
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Analog Switch
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
Top View
SD
SD
SD
GD
Top View
Internal Schematic
D
G
S
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMP4015SSSQ-13
Qualification
Automotive
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
P4015SS
YY WW
14
= Manufacturer’s Marking
P4015SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
1 of 7
www.diodes.com
November 2015
© Diodes Incorporated




 DMP4015SSSQ
DMP4015SSSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 7) VGS = -4.5V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)
Steady
State
Steady
State
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IAS
EAS
Value
-40
±25
-9.1
-7.2
-7.8
-6.2
-10.1
-8
-8.8
-7
-100
-22
242
Units
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
RθJc
TJ, TSTG
Value
1.45
88
1.82
70
7.6
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-40

-1.5


Typ

-2
7
9
26
-0.7
4,234
1,036
526
7.77
47.5
14.2
13.5
13.2
10
302.7
137.9
Max
-1
100
-2.5
11
15
-1


Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -40V, VGS = 0V
nA VGS = 25V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
S VDS = -20V, ID = -9.8A
V VGS = 0V, IS = -1A
pF
VDS = -20V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = -20V, VGS = -5V
ID = -9.8A
nS
VGS = -10V, VDD = -20V, RG = 6,
ID = -1A, RL = 20
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
8 .UIS in production with L = 1mH, TJ = +25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated




 DMP4015SSSQ
30.0
25.0
20.0
15.0
10.0
5.0
0.0 0
0.02
-VGS=4.0V
-VGS=4.5V
-VGS=10V
-VGS=3.5V
-VGS=3.0V
-VGS=2.5V
0.5 1 1.5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
2
0.015
0.01
0.005
DMP4015SSSQ
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
-VGS= 4.5V
TA = 125C
TA = 150C
0.015
0.01
TA = 85C
TA = 25C
0.005
TA = -55C
0
0
1.6
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
1.4
1.2
0
0
0.02
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.016
-VGS=4.5V
-ID=5.0A
0.012
1
0.008
VGS=10V
ID=10A
0.8 0.004
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
DMP4015SSSQ
Document number: DS36682 Rev. 4 - 2
3 of 7
www.diodes.com
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
November 2015
© Diodes Incorporated



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