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P-Channel MOSFET. DMP4015SK3 Datasheet

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P-Channel MOSFET. DMP4015SK3 Datasheet






DMP4015SK3 MOSFET. Datasheet pdf. Equivalent




DMP4015SK3 MOSFET. Datasheet pdf. Equivalent





Part

DMP4015SK3

Description

P-Channel MOSFET



Feature


  Green DMP4015SK3 P-CHANNEL ENHANCEME NT MODE MOSFET Product Summary V(BR)D SS -40V RDS(on) max 11m @ VGS = -10 V 15m @ VGS = -4.5V ID TC = +25°C -35A -30A Description This new generat ion MOSFET has been designed to minimiz e the onstate resistance (RDS(ON)) and yet maintain superior switching perform ance, making it ideal for high efficien cy power management appl.
Manufacture

Diodes

Datasheet
Download DMP4015SK3 Datasheet


Diodes DMP4015SK3

DMP4015SK3; ications. Applications DC-DC Converters Power management functions Backlight ing Features and Benefits 100% Unclam ped Inductive Switch (UIS) test in prod uction Low on-resistance Fast switchi ng speed Lead-Free Finish; RoHS Compli ant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)  Q ualified to AEC-Q101 Standards for High Reliability Mechanical.


Diodes DMP4015SK3

Data Case: TO252 (DPAK) Case Material : Molded Plastic, “Green” Molding C ompound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Le vel 1 per J-STD-020 Terminal Connectio ns: See Diagra .


Diodes DMP4015SK3

.

Part

DMP4015SK3

Description

P-Channel MOSFET



Feature


  Green DMP4015SK3 P-CHANNEL ENHANCEME NT MODE MOSFET Product Summary V(BR)D SS -40V RDS(on) max 11m @ VGS = -10 V 15m @ VGS = -4.5V ID TC = +25°C -35A -30A Description This new generat ion MOSFET has been designed to minimiz e the onstate resistance (RDS(ON)) and yet maintain superior switching perform ance, making it ideal for high efficien cy power management appl.
Manufacture

Diodes

Datasheet
Download DMP4015SK3 Datasheet




 DMP4015SK3
  Green
DMP4015SK3
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-40V
RDS(on) max
11m@ VGS = -10V
15m@ VGS = -4.5V
ID
TC = +25°C
-35A
-30A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Backlighting
Features and Benefits
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) 
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Finish annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (approximate)
TO252
D
Top View
D
GS
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP4015SK3-13
DMP4015SK3Q-13
Compliance
Standard
Automotive
Case
TO252
TO252
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
P4015S
YYWW
Logo
Part no.
.
Xth week: 01 ~ 53
Year: “11” = 2011
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
1 of 7
www.diodes.com
February 2013
© Diodes Incorporated




 DMP4015SK3
DMP4015SK3
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -10V
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Steady
State
Steady
State
t<10s
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
IDM
IS
IAS
EAS
Value
-40
±25
-35
-27
-14
-11
-22
-18
-100
-5.5
-57
162
Units
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
Steady state
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
3.5
2.2
36
15
4.5
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-40

-1.5


Typ

-2.0
7
9
26
-0.7
4234
1036
526
7.77
47.5
14.2
13.5
13.2
10.0
302.7
137.9
Max
-1
100
-2.5
11
15
-1.0


Unit Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -40V, VGS = 0V
nA VGS = 25V, VDS = 0V
V VDS = VGS, ID = -250µA
m
VGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
S VDS = -20V, ID = -9.8A
V VGS = 0V, IS = -1A
pF
VDS = -20V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -20V, VGS = -5V
ID = -9.8A
ns
VGS = -10V, VDD = -20V,
RG = 6, ID = -1A
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. UIS in production with L = 0.1mH, TJ = +25°C.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
2 of 7
www.diodes.com
February 2013
© Diodes Incorporated




 DMP4015SK3
30.0
25.0
20.0
15.0
10.0
5.0
0.00
0.02
-VGS = 4.0V
-VGS = 4.5V
-VGS = 10V
-VGS = 3.5V
-VGS = 3.0V
0.5 1 1.5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
2
0.015
0.01
0.005
DMP4015SK3
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
-VGS= 4.5V
TA = 125C
TA = 150C
0.015
0.01
TA = 85C
TA = 25C
0.005
TA = -55C
00
1.6
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
1.4
1.2
0
0
0.020
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.016
-VGS = 4.5V
-ID = 5.0A
0.012
1
0.008
-VGS = 10V
-ID = 10A
0.8 0.004
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
DMP4015SK3
Document number: DS35480 Rev. 6 - 2
3 of 7
www.diodes.com
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
February 2013
© Diodes Incorporated



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