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P-Channel MOSFET. DMP4015SSS Datasheet

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P-Channel MOSFET. DMP4015SSS Datasheet






DMP4015SSS MOSFET. Datasheet pdf. Equivalent




DMP4015SSS MOSFET. Datasheet pdf. Equivalent





Part

DMP4015SSS

Description

P-Channel MOSFET



Feature


NEW PRODUCT Product Summary BVDSS -40V RDS(ON) Max 11mΩ @ VGS = -10V 15m @ VGS = -4.5V ID TA = +25°C -10.1A -8.8A DMP4015SSS P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits 100 % Unclamped Inductive Switch (UIS) Test in Production Low Input Capacitance Totally Lead-Free & Fully RoHS Complian t (Notes 1 & 2) Halogen and Antimony F ree. “Green” Device (No.
Manufacture

Diodes

Datasheet
Download DMP4015SSS Datasheet


Diodes DMP4015SSS

DMP4015SSS; te 3) Qualified to AEC-Q101 Standards f or High Reliability Description and Ap plication This new generation MOSFET is designed to minimize the on-state resi stance (RDS(ON)) and yet maintain super ior switching performance, making it id eal for high-efficiency power managemen t applications. DC-DC Converters Powe r Management Functions Analog Switch SO-8 S Mechanica.


Diodes DMP4015SSS

l Data Case: SO-8 Case Material: Molde d Plastic, “Green” Molding Compound . UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 p er J-STD-020 Terminal Connections: See Diagram Termin .


Diodes DMP4015SSS

.

Part

DMP4015SSS

Description

P-Channel MOSFET



Feature


NEW PRODUCT Product Summary BVDSS -40V RDS(ON) Max 11mΩ @ VGS = -10V 15m @ VGS = -4.5V ID TA = +25°C -10.1A -8.8A DMP4015SSS P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits 100 % Unclamped Inductive Switch (UIS) Test in Production Low Input Capacitance Totally Lead-Free & Fully RoHS Complian t (Notes 1 & 2) Halogen and Antimony F ree. “Green” Device (No.
Manufacture

Diodes

Datasheet
Download DMP4015SSS Datasheet




 DMP4015SSS
Product Summary
BVDSS
-40V
RDS(ON) Max
11m@ VGS = -10V
15m@ VGS = -4.5V
ID
TA = +25°C
-10.1A
-8.8A
DMP4015SSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Application
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
DC-DC Converters
Power Management Functions
Analog Switch
SO-8
S
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
D
SD
S DG
Top View
GD
Top View
Internal Schematic
S
Equivalent circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP4015SSS-13
Qualification
Standard
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
P4015SS
YY WW
14
85
P4015SS
YY WW
14
= Manufacturer’s Marking
P4015SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
DMP4015SSS
Document number: DS35416 Rev. 11 - 2
1 of 7
www.diodes.com
January 2017
© Diodes Incorporated




 DMP4015SSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Steady
State
Steady
State
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IAS
EAS
DMP4015SSS
Value
-40
±25
-9.1
-7.2
-7.8
-6.2
-10.1
-8
-8.8
-7
-100
-22
242
Unit
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
RθJc
TJ, TSTG
Value
1.45
88
1.82
70
7.6
-55 to +150
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
-40

-1.5


Typ

-2
7
9
26
-0.7
4234
1036
526
7.77
47.5
14.2
13.5
13.2
10
302.7
137.9
Max
-1
100
-2.5
11
15
-1


Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -40V, VGS = 0V
nA VGS = 25V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -9.8A
VGS = -4.5V, ID = -9.8A
S VDS = -20V, ID = -9.8A
V VGS = 0V, IS = -1A
pF
VDS = -20V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDS = -20V, VGS = -5V
ID = -9.8A
ns
VGS = -10V, VDD = -20V, Rg = 6,
ID = -1A, RL = 20
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7 .UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP4015SSS
Document number: DS35416 Rev. 11 - 2
2 of 7
www.diodes.com
January 2017
© Diodes Incorporated




 DMP4015SSS
30.0
25.0
20.0
15.0
10.0
5.0
0.0 0
0.02
-VGS=4.0V
-VGS=4.5V
-VGS=10V
-VGS=3.5V
-VGS=3.0V
-VGS=2.5V
0.5 1 1.5
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
2
0.015
0.01
0.005
DMP4015SSS
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
-VGS= 4.5V
TA = 125C
TA = 150C
0.015
0.01
TA = 85C
TA = 25C
0.005
TA = -55C
0
0
1.6
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
1.4
0
0
0.02
5 10 15 20 25
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.016
-VGS=4.5V
-ID=5.0A
1.2 0.012
1
0.008
VGS=10V
ID=10A
0.8 0.004
0.6
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
DMP4015SSS
Document number: DS35416 Rev. 11 - 2
3 of 7
www.diodes.com
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
January 2017
© Diodes Incorporated



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