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P-Channel MOSFET. DMP4047LFDE Datasheet

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P-Channel MOSFET. DMP4047LFDE Datasheet
















DMP4047LFDE MOSFET. Datasheet pdf. Equivalent













Part

DMP4047LFDE

Description

P-Channel MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMP4047LFDE Datasheet


Diodes DMP4047LFDE

DMP4047LFDE; .


Diodes DMP4047LFDE

.


Diodes DMP4047LFDE

.





Part

DMP4047LFDE

Description

P-Channel MOSFET



Feature


.
Manufacture

Diodes

Datasheet
Download DMP4047LFDE Datasheet




 DMP4047LFDE
Product Summary
V(BR)DSS
-40V
RDS(ON) max
33mΩ @ VGS = -10V
50m@ VGS = -4.5V
Package
U-DFN2020-6
Type E
ID max
TA = +25°C
-6A
-4.9A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
General Purpose Interfacing Switch
Load Switching
Battery Management Application
Power Management Functions
U-DFN2020-6 Type E
DMP4047LFDE
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.0065 grams (approximate)
D
Pin1
G
Bottom View
Pin Out
Bottom View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP4047LFDE-7
DMP4047LFDE-13
Marking
PE
PE
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
PE = Product Type Marking Code
PE YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMP4047LFDE
Datasheet number: DS35777 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated




 DMP4047LFDE
DMP4047LFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Steady
State
t<5s
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
Value
-40
±20
-3.3
-2.6
-5.3
-4.2
-6.0
-4.8
-9.5
-7.6
-40
3
Units
V
V
A
A
A
A
A
A
Thermal Characteristics
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.7
0.42
180
76
2.1
1.3
58
25
10.2
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
-40
-1.0
Typ
26
36
5.2
0.75
1382
103
81
7.7
11.2
23.2
3.3
3.9
18.4
28.2
38.8
28.6
15.4
5.4
Max
1
±100
-2.2
33
50
1.2
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = -40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ
VGS = -10V, ID = -4.4A
VGS = -4.5V, ID = -3.7A
S VDS = -15V, ID = -4.4A
V VGS = 0V, IS = -3.9A
pF
pF
pF
VDS = -20V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VDS = -20V, ID = -4.9A
nC
ns
ns VDS = -20V, ID = -3.9A
ns VGS = 4.5V, RG = 1
ns
ns
nC
IF = -3.9A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
DMP4047LFDE
Datasheet number: DS35777 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated




 DMP4047LFDE
30
VGS = -10V
25 VGS = -5.0V
VGS = -4.5V
20
VGS = -4.0V
15 VGS = -3.5V
10 VGS = -3.0V
5
0
0
0.15
VGS = -2.5V
VGS = -2.0V
1234
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
DMP4047LFDE
30
25 VDS = -5.0V
20
15
10
5
0
0
20
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1234
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
5
0.12
0.09
VGS = -2.5V
0.06
0.03
0
0.10
0.08
0.06
0.04
VGS = -4.5V
VGS = -10V
-ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = -4.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.02
TA = -55°C
15
10
5
ID = -4.4A
ID = -3.7A
0
0
0.02
0.04 0.06 0.08 0.10
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
VGS = -10V
ID = -10A
1.4
VGS = -4.5V
1.2 ID = -5A
1.0
0.8
0
0 5 10 15 20 25 30
-ID, DRAIN SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMP4047LFDE
Datasheet number: DS35777 Rev. 5 - 2
3 of 6
www.diodes.com
July 2012
© Diodes Incorporated




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