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P-Channel MOSFET. DMP3085LSD Datasheet

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P-Channel MOSFET. DMP3085LSD Datasheet






DMP3085LSD MOSFET. Datasheet pdf. Equivalent




DMP3085LSD MOSFET. Datasheet pdf. Equivalent





Part

DMP3085LSD

Description

P-Channel MOSFET



Feature


DMP3085LSD P-CHANNEL ENHANCEMENT MODE MO SFET Product Summary V(BR)DSS -30V R DS(ON) MAX 70mΩ @VGS = -10V 95mΩ @V GS = -4.5V Package SO-8 ID TA = +25° C -3.9A -3.3A Description This MOSFET has been designed to minimize the on-st ate resistance (RDS(ON)) and yet mainta in superior switching performance, maki ng it ideal for high efficiency power m anagement applications..
Manufacture

Diodes

Datasheet
Download DMP3085LSD Datasheet


Diodes DMP3085LSD

DMP3085LSD; Applications Backlighting Power Mana gement Functions DC-DC Converters Fea tures Low On-Resistance Low Input Cap acitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Note s 1 & 2) Halogen and Antimony Free. Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliabilit y Mechanical Data Case: SO-8 Case Mat erial: Molded Plastic,.


Diodes DMP3085LSD

"Green" Molding Compound UL Flammabili ty Classification Rating 94V-0 Moistur e Sensitivity: Level 1 per J-STD-020 T erminal Connections Indicator: See diag ram Terminals: Finish  Matte Tin an nealed ove .


Diodes DMP3085LSD

.

Part

DMP3085LSD

Description

P-Channel MOSFET



Feature


DMP3085LSD P-CHANNEL ENHANCEMENT MODE MO SFET Product Summary V(BR)DSS -30V R DS(ON) MAX 70mΩ @VGS = -10V 95mΩ @V GS = -4.5V Package SO-8 ID TA = +25° C -3.9A -3.3A Description This MOSFET has been designed to minimize the on-st ate resistance (RDS(ON)) and yet mainta in superior switching performance, maki ng it ideal for high efficiency power m anagement applications..
Manufacture

Diodes

Datasheet
Download DMP3085LSD Datasheet




 DMP3085LSD
DMP3085LSD
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
RDS(ON) MAX
70m@VGS = -10V
95m@VGS = -4.5V
Package
SO-8
ID
TA = +25°C
-3.9A
-3.3A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper lead frame
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
S1
G1
D1 D1
D1
D2
S2
D2 G1
G2
Top View
G2 D2
Top View
Internal Schematic
S1
Equivalent Circuit
S2
Ordering Information (Note 4)
Notes:
Part Number
DMP3085LSD-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
Top View
8
5
P3085SD
YY WW
14
Logo
Part no.
Xth week: 01~53
Year: “12” = 2012
1 of 6
www.diodes.com
May 2013
© Diodes Incorporated




 DMP3085LSD
DMP3085LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
-30
±20
-3.9
-3.1
-4.9
-3.9
-2.5
20
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t<10s
TA = +25°C
TA = +70°C
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.1
0.7
107
70
1.7
1.1
75
50
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-30
-1
Typ Max Unit
—— V
— -1 µA
— ±100 nA
— -3
V
50
75
70
95
m
5.8 —
S
-0.7 -1.2
V
563 —
48 —
41 —
10.3 —
5.2 —
11 —
1.7 —
1.9 —
4.8 —
5—
31 —
14.6 —
pF
nC
nS
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250µA
VDS =-30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5.3A
VGS = -4.5V, ID = -4.2A
VDS = -5V, ID = -5.3A
VGS = 0V, IS = -1A
VDS = -25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -15V, ID = -3.8A
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated




 DMP3085LSD
20.0
VGS = -10V
16.0
VGS = -4.5V
12.0
VGS = -4.0V
20
VDS = -5.0V
16
12
DMP3085LSD
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
8.0 8
4.0
0.0
0
1.0
VGS = -3.0V
VGS = -2.0V
VGS = -2.5V
1234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
4
0
012345
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.4
0.35
VGS = -4.5V
6
0.1 VGS = -4.5V
VGS = -10V
0.3
0.25
0.2
0.15
0.1
0.05
TA = 150C
TA = 125C
TA = 85C
TA = 25C
TA = -55C
0.01
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
1.8 VGS = -10V
1.6 ID = -5.3A
1.4
1.2
1
VGS = -4.5V
ID = -4.2A
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
0
0
0.16
4 8 12 16
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.14
0.12
0.1
VGS = -4.5V
ID = -4.2A
0.08
0.06
0.04
VGS = -10V
ID = -5.3A
0.02
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMP3085LSD
Document number: DS36194 Rev. 1 - 0
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated



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