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P-Channel MOSFET. DMPH3010LK3 Datasheet

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P-Channel MOSFET. DMPH3010LK3 Datasheet






DMPH3010LK3 MOSFET. Datasheet pdf. Equivalent






DMPH3010LK3 MOSFET. Datasheet pdf. Equivalent


DMPH3010LK3

Part

DMPH3010LK3

Description

P-Channel MOSFET



Feature


NEW PRODUCT Green DMPH3010LK3 175°C P- CHANNEL ENHANCEMENT MODE MOSFET Produc t Summary V(BR)DSS -30V RDS(ON) Max 7 .5m @ VGS = -10V 10m @ VGS = -4.5 V ID TC = +25°C -50A -45A Descriptio n This new generation MOSFET is designe d to minimize the on-state resistance ( RDS(ON)) and yet maintain superior swit ching performance, making it ideal for high efficiency power ma.
Manufacture

Diodes

Datasheet
Download DMPH3010LK3 Datasheet


Diodes DMPH3010LK3

DMPH3010LK3; nagement applications. Applications DC- DC Converters Power Management Functio ns Backlighting Features and Benefits Rated to +175°C – Ideal for High A mbient Temperature Environments 100% U nclamped Inductive Switch (UIS) Test in Production Low On-Resistance Fast Sw itching Speed Lead-Free Finish; RoHS C ompliant (Notes 1 & 2) Halogen and Ant imony Free. “Green” D.


Diodes DMPH3010LK3

evice (Note 3) Qualified to AEC-Q101 St andards for High Reliability Mechanical Data Case: TO252 Case Material: Mold ed Plastic, ―Green‖ Molding Compoun d. UL Flammability Classification Ratin g 94V-0 Moi .

Part

DMPH3010LK3

Description

P-Channel MOSFET



Feature


NEW PRODUCT Green DMPH3010LK3 175°C P- CHANNEL ENHANCEMENT MODE MOSFET Produc t Summary V(BR)DSS -30V RDS(ON) Max 7 .5m @ VGS = -10V 10m @ VGS = -4.5 V ID TC = +25°C -50A -45A Descriptio n This new generation MOSFET is designe d to minimize the on-state resistance ( RDS(ON)) and yet maintain superior swit ching performance, making it ideal for high efficiency power ma.
Manufacture

Diodes

Datasheet
Download DMPH3010LK3 Datasheet




 DMPH3010LK3
Green DMPH3010LK3
175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
RDS(ON) Max
7.5m@ VGS = -10V
10m@ VGS = -4.5V
ID
TC = +25°C
-50A
-45A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
Features and Benefits
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO252
D
D
Top View
D
GS
Top View
Pin-Out
G
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMPH3010LK3-13
Case
TO252
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H3010L
YYWW
H301.=0ML a=nPufraocdtuucret rT’sypMeaMrkainrkging Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
DMPH3010LK3
Document number: DS38123 Rev. 1 - 2
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated




 DMPH3010LK3
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6), VGS = -10V
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Avalanche Current (Note 7), L = 0.1mH
Avalanche Energy (Note 7), L = 0.1mH
Steady
State
Steady
State
TC = +25°C
TC = +100°C
TA = +25°C
TA = +100°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
DMPH3010LK3
Value
-30
±20
-50
-40
-16
-11
-100
-3.5
-47
113
Unit
V
V
A
A
A
A
A
mJ
Value
2.0
73
3.9
38
1.0
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
-30
-1.1
Typ
-1.6
5.7
7.2
-0.65
6807
988
647
6.2
66
139
19.1
21.7
9.0
10.5
255
95
27
21
Max
-1.0
±100
-2.1
7.5
10
-1.0
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ =+ 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA
μA VDS = -30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
mΩ VGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
V VGS = 0V, IS = -1A
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = -15V, ID = -10A
nC
ns
ns VDS = -15V, VGEN = -10V,
ns RG = 6Ω, ID = -1A
ns
ns IF = -10A, di/dt = -100A/μs
nC IF = -10A, di/dt = -100A/μs
DMPH3010LK3
Document number: DS38123 Rev. 1 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated



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