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MOSFET CONTROLLER. ZXGD3108N8 Datasheet

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MOSFET CONTROLLER. ZXGD3108N8 Datasheet






ZXGD3108N8 CONTROLLER. Datasheet pdf. Equivalent




ZXGD3108N8 CONTROLLER. Datasheet pdf. Equivalent





Part

ZXGD3108N8

Description

40V ACTIVE OR-ING MOSFET CONTROLLER



Feature


Description ZXGD3108N8 is a 40V Active O R’ing MOSFET Controller designed for driving a very low RDS(ON) Power MOSFET as an ideal diode. This replaces the s tandard rectifier to reduce the forward voltage drop and overall increase the power transfer efficiency. The ZXGD3108 N8 can be used on both high-side and lo w-side power supply units (PSU) with ra ils up to ±40V. It e.
Manufacture

Diodes

Datasheet
Download ZXGD3108N8 Datasheet


Diodes ZXGD3108N8

ZXGD3108N8; nables very low RDS(ON) MOSFETs to opera te as ideal diodes as the turn-off thre shold is only -3mV with ±2mV tolerance . In the typical 12V configuration, the standby power consumption is <5mW as t he low quiescent supply current is <400 µA. During PSU fault condition, the OR ’ing Controller detects the power red uction and rapidly turns off the MOSFET in <600ns to block re.


Diodes ZXGD3108N8

verse current flow and avoid the common bus voltage dropping. Applications Acti ve OR’ing Controller in: (N+1) Redun dant Power Supplies Telecom and Networ king Data Centers and Servers ZXGD310 8N8 40V ACTIVE OR'ING MOSFET CONTROLLER IN SO8 Features Active OR’ing MOSFE T Controller for High- or Low-Side PSU Ideal Diode to Reduce Forward Voltage Drop -3mV Typical Tur.


Diodes ZXGD3108N8

n-Off Threshold with ±2mV Tolerance 40 V Drain Voltage Rating 25V VCC Rating <5mW Standby Power with Quiescent Supp ly Current <400µA <600ns Turn-Off Tim e to Minimize Reverse Current Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony free. “ Green” Device (Note 3) Mechanical Dat a Case: SO-8 Case Material: Molded Pl astic. “Green” Molding C.

Part

ZXGD3108N8

Description

40V ACTIVE OR-ING MOSFET CONTROLLER



Feature


Description ZXGD3108N8 is a 40V Active O R’ing MOSFET Controller designed for driving a very low RDS(ON) Power MOSFET as an ideal diode. This replaces the s tandard rectifier to reduce the forward voltage drop and overall increase the power transfer efficiency. The ZXGD3108 N8 can be used on both high-side and lo w-side power supply units (PSU) with ra ils up to ±40V. It e.
Manufacture

Diodes

Datasheet
Download ZXGD3108N8 Datasheet




 ZXGD3108N8
Description
ZXGD3108N8 is a 40V Active ORing MOSFET Controller designed
for driving a very low RDS(ON) Power MOSFET as an ideal diode. This
replaces the standard rectifier to reduce the forward voltage drop and
overall increase the power transfer efficiency.
The ZXGD3108N8 can be used on both high-side and low-side power
supply units (PSU) with rails up to ±40V. It enables very low RDS(ON)
MOSFETs to operate as ideal diodes as the turn-off threshold is
only -3mV with ±2mV tolerance. In the typical 12V configuration, the
standby power consumption is <5mW as the low quiescent supply
current is <400µA. During PSU fault condition, the ORing Controller
detects the power reduction and rapidly turns off the MOSFET in
<600ns to block reverse current flow and avoid the common bus
voltage dropping.
Applications
Active ORing Controller in:
(N+1) Redundant Power Supplies
Telecom and Networking
Data Centers and Servers
ZXGD3108N8
40V ACTIVE OR'ING MOSFET CONTROLLER IN SO8
Features
Active OR’ing MOSFET Controller for High- or Low-Side PSU
Ideal Diode to Reduce Forward Voltage Drop
-3mV Typical Turn-Off Threshold with ±2mV Tolerance
40V Drain Voltage Rating
25V VCC Rating
<5mW Standby Power with Quiescent Supply Current <400µA
<600ns Turn-Off Time to Minimize Reverse Current
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
-ve Rail
Typical Configuration for
Low-Side -ve Supply Rail
VD
VS
-ve Vout
DRAIN
VG
GATE GND
ZXGD3108
C1
Vcc
GND Rail
GND
SO-8
Top View
DNC
DNC
GND
GND
GND
GND
GATE
GATE
DRAIN
DRAIN
DNC
DNC
VCC
VCC
Vcc
Pin Name
DNC
GND
GATE
DRAIN
VCC
Pin Function
Do Not Connect
Power Ground
Gate Drive
Drain Sense
Power Supply
Ordering Information (Note 4)
Product
ZXGD3108N8TC
Marking
ZXGD3108
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free,
"Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
ZXGD
3108
YY WW
ZXGD = Product Type Marking Code, Line 1
3108 = Product Type Marking Code, Line 2
YY = Year (ex: 17 = 2017)
WW = Week (01 - 53)
ZXGD3108N8
Document Number DS36530 Rev. 3 - 2
1 of 10
www.diodes.com
April 2017
© Diodes Incorporated




 ZXGD3108N8
ZXGD3108N8
Absolute Maximum Ratings (Voltage relative to GND, @ TA = +25°C, unless otherwise specified.)
Characteristic
Supply Voltage
Drain Pin Voltage
Gate Output Voltage
Gate Driver Peak Source Current
Gate Driver Peak Sink Current
Symbol
VCC
VD
VG
ISOURCE
ISINK
Value
25
-3 to 40
-3 to VCC +3
2
5
Unit
V
V
V
A
A
Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
Power Dissipation
Linear Derating Factor
(Note 6)
PD
(Note 7)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
RθJA
RθJL
TJ, TSTG
Value
490
3.92
655
5.24
720
5.76
785
6.28
255
191
173
159
135
-50 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge Human Body Model
Electrostatic Discharge Machine Model
Symbol
ESD HBM
ESD MM
Value
2,000
200
Unit
JEDEC Class
V
2
V
B
Notes:
5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as Note (5), except pins 2 & 3 (GND) and pins 5 & 6 (VCC) are both connected to separate 5mm x 5mm 1oz copper heat-sinks.
7. Same as Note (6), except both heat-sinks are 10mm x 10mm.
8. Same as Note (6), except both heat-sinks are 15mm x 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on pins 2 & 3 (GND) and pins 5 & 6 (VCC).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A11
Thermal Derating Curve
ZXGD3108N8
Document Number DS36530 Rev. 3 - 2
0.8
0.7
15mm x 15mm
0.6
10mm x 10mm
0.5
0.4
0.3
Minimum
Layout
0.2
5mm x 5mm
0.1
0.0
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Derating Curve
2 of 10
www.diodes.com
April 2017
© Diodes Incorporated




 ZXGD3108N8
ZXGD3108N8
Electrical Characteristics (@ VCC = 12V, TA = +25°C, unless otherwise specified.)
Characteristic
Input Supply
Operating Supply Voltage
Quiescent Current
Gate Driver
Gate Peak Source Current
Gate Peak Sink Current
Gate Peak Source Current (Note 11)
Gate Peak Sink Current (Note 11)
Detector Under DC Condition
Turn-Off Threshold Voltage
Symbol Min
VCC
4
IQ
ISOURCE
ISINK
ISOURCE
1
ISINK
1.8
VT
VG(OFF)
VG
-5
10.5
Typ
200
0.66
3.3
-3
0.1
10.9
Max
Unit
20
V
400
µA
A
A
A
-1
mV
0.3
Gate Output Voltage
VG(OFF)
0.1
0.3
VG
2.5
2.9
V
VG(OFF)
0.1
0.3
VG
18.5
18.8
Switching Performance
Turn-On Propagation Delay
Gate Rise Time
Turn-Off Propagation Delay
Gate Fall Time
tD(RISE)
400
tR
695
ns
tD(FALL)
400
tF
131
Note:
11. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
Test Condition
-0.6V VDRAIN 30V
CL = 47nF
VGATE = 5V & VDRAIN = -1V
VGATE = 5V & VDRAIN = 1V
VG 1V
VDRAIN ≥ 0mV
VDRAIN = -8mV
VDRAIN ≥ 0mV &
VCC = 4V
VDRAIN = -8mV &
VCC = 4V
VDRAIN -8mV &
VCC = 20V
VDRAIN = -8mV &
VCC = 20V
Load: 50nF
Capacitor Connected
in Parallel with 50k
Resistor
CL = 47nF
Rise and Fall Measured 10% to 90%
Refer to Application Test Circuit Below
Pin Functions
Pin Number Pin Name
1, 7
DNC
2, 3
GND
4
GATE
5, 6
VCC
8
DRAIN
Pin Function and Description
Do Not Connect
Leave pin floating.
Ground
Connect this pin to the MOSFET source terminal and ground reference point.
Gate Drive
This pin sources (ISOURCE) and sinks (ISINK) current into the MOSFET gate. The turn-on time of the MOSFET
can be programmed through an external gate resistor (RG).
Power Supply
This supply pin should be closely decoupled to ground with a X7R type capacitor.
Drain Sense
Connect this pin to the MOSFET drain terminal to detect the change in drain-source voltage.
DN
CD
GN
DG
GND
GND
GATE
GATE
DRAIN
DRAIN
DN
CD
VCC
VCC
ZXGD3108N8
Document Number DS36530 Rev. 3 - 2
3 of 10
www.diodes.com
April 2017
© Diodes Incorporated



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