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MOSFET CONTROLLER. ZXGD3112N7 Datasheet

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MOSFET CONTROLLER. ZXGD3112N7 Datasheet






ZXGD3112N7 CONTROLLER. Datasheet pdf. Equivalent




ZXGD3112N7 CONTROLLER. Datasheet pdf. Equivalent





Part

ZXGD3112N7

Description

400V ACTIVE OR-ING MOSFET CONTROLLER



Feature


ZXGD3112N7 400V ACTIVE OR-ING MOSFET CON TROLLER IN SO7 Description ZXGD3112N7 is a 400V Active OR-ing MOSFET controll er designed for driving a very low RDS( ON) power MOSFET as an ideal diode. Thi s replaces the standard rectifier to re duce the forward voltage drop and overa ll increase the power transfer efficien cy. The ZXGD3112N7 can be used on both high-side and low-.
Manufacture

Diodes

Datasheet
Download ZXGD3112N7 Datasheet


Diodes ZXGD3112N7

ZXGD3112N7; side power supply units (PSU) with rails up to ±400V. It enables very low RDS( ON) MOSFETs to operate as ideal diodes as the turn-off threshold is only -3mV with ±2mV tolerance. In the typical 48 V configuration, the standby power cons umption is <50mW as the low quiescent s upply current is <1mA. During PSU fault condition, the OR-ing Controller detec ts the power reducti.


Diodes ZXGD3112N7

on and rapidly turns off the MOSFET in < 600ns to block reverse current flow and avoid the common bus voltage dropping. Features Active OR-ing MOSFET Contro ller for High- or Low-Side PSU Ideal D iode to Reduce Forward Voltage Drop -3 mV Typical Tur .


Diodes ZXGD3112N7

.

Part

ZXGD3112N7

Description

400V ACTIVE OR-ING MOSFET CONTROLLER



Feature


ZXGD3112N7 400V ACTIVE OR-ING MOSFET CON TROLLER IN SO7 Description ZXGD3112N7 is a 400V Active OR-ing MOSFET controll er designed for driving a very low RDS( ON) power MOSFET as an ideal diode. Thi s replaces the standard rectifier to re duce the forward voltage drop and overa ll increase the power transfer efficien cy. The ZXGD3112N7 can be used on both high-side and low-.
Manufacture

Diodes

Datasheet
Download ZXGD3112N7 Datasheet




 ZXGD3112N7
ZXGD3112N7
400V ACTIVE OR-ING MOSFET CONTROLLER IN SO7
Description
The ZXGD3112N7 is a 400V active ORing MOSFET controller
designed for driving a very low RDS(ON) power MOSFET as an ideal
diode. This replaces the standard rectifier to reduce the forward
voltage drop and overall increase the power transfer efficiency.
The ZXGD3112N7 can be used on both high-side and low-side power
supply units (PSU) with rails up to ±400V. It enables very low RDS(ON)
MOSFETs to operate as ideal diodes as the turn-off threshold is
only -3mV with ±2mV tolerance. In the typical 48V configuration, the
standby power consumption is <50mW as the low quiescent supply
current is <1mA. During PSU fault condition, the ORing controller
detects the power reduction and rapidly turns off the MOSFET in
<600ns to block reverse current flow and avoid the common bus
voltage dropping.
Applications
Active ORing Controller in:
(N + 1) Redundant Power Supplies
Telecom and Networking
Data Centers and Servers
Features
Active OR-ing MOSFET Controller for High- or Low-Side PSU
Ideal Diode to Reduce Forward Voltage Drop
-3mV Typical Turn-Off Threshold with ±2mV Tolerance
400V Drain Voltage Rating
25V VCC Rating
<50mW Standby Power with Quiescent Supply Current <1mA
<600ns Turn-Off Time to Minimize Reverse Current
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-7
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-7
Top View
GND 1
GND 2
Vcc 3
GATE 4
Top View
Pin-Out
7 DRAIN
6 PGND
5 PGND
Ordering Information (Note 4)
Product
ZXGD3112N7TC
Marking
ZXGD3112
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXGD3112N7
Document Number DS37739 Rev. 3 - 2
ZXGD
3112
YY WW
ZXGD = Product Type Marking Code, Line 1
3112 = Product Type Marking Code, Line 2
YY = Year (ex: 18 = 2018)
WW = Week (01 to 53)
1 of 14
www.diodes.com
October 2018
© Diodes Incorporated




 ZXGD3112N7
ZXGD3112N7
Pin Functions
Pin Number Pin Name
1, 2 GND
3 VCC
4 GATE
5, 6 PGND
7 DRAIN
Pin Function and Description
Ground
Connect this pin to the MOSFET source terminal and ground reference point.
Power Supply
This supply pin should be closely decoupled to ground with a X7R type capacitor.
Gate Drive
This pin sources (ISOURCE) and sinks (ISINK) current into the MOSFET gate. If VCC > 12V, then the GATE-to-GND
will clamp at 12V. The turn on time of the MOSFET can be programmed through an external gate resistor (RG).
Power Ground
Connect this pin to the MOSFET source terminal and ground reference point.
Drain Sense
Connect this pin to the MOSFET drain terminal to detect the change in drain-source voltage.
Absolute Maximum Ratings (Voltage relative to GND, @ TA = +25°C, unless otherwise specified.)
Characteristic
Supply Voltage
Drain Pin Voltage
Gate Output Voltage**
Gate Driver Peak Source Current
Gate Driver Peak Sink Current
Symbol
VCC
VD
VG
ISOURCE
ISINK
Value
25
-3 to 400
-3 to VCC + 3
2
5
**Gate voltage is clamped to 12V.
Thermal Characteristics
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
PD
RϴJA
RϴJL
TJ, TSTG
Value
490
3.92
655
5.24
720
5.76
785
6.28
255
191
173
159
135
-50 to +150
Unit
V
V
V
A
A
Unit
mW
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge—Human Body Model
Electrostatic Discharge—Machine Model
Symbol
ESD HBM
ESD MM
Value
2000
200
Unit
V
V
JEDEC Class
3A
B
Notes:
5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
6. Same as Note 5, except pin 3 (VCC) and pins 5 & 6 (PGND) are both connected to separate 5mm × 5mm 1oz copper heat-sinks.
7. Same as Note 6, except both heat-sinks are 10mm × 10mm.
8. Same as Note 6, except both heat-sinks are 15mm × 15mm.
9. Thermal resistance from junction to solder-point at the end of each lead on pins 2 & 3 (GND) and pins 5 & 6 (VCC).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A11.
ZXGD3112N7
Document Number DS37739 Rev. 3 - 2
2 of 14
www.diodes.com
October 2018
© Diodes Incorporated




 ZXGD3112N7
ZXGD3112N7
Thermal Derating Curve
0.8
0.7 15mm x 15mm
0.6 10mm x 10mm
0.5
0.4
0.3
Minimum
Layout
0.2
5mm x 5mm
0.1
0.0
0 20 40 60 80 100 120 140 160
Junction Temperature (OC)
Derating Curve
Electrical Characteristics (@ VCC = 12V, TA = +25°C, unless otherwise specified.)
Characteristic
Input Supply
Operating Supply Voltage
Quiescent Current
Drain Low Input Current
Drain High Input Current
Gate Driver
Gate Peak Source Current
Gate Peak Sink Current
Gate Peak Source Current (Note 11)
Gate Peak Sink Current (Note 11)
Detector Under DC Condition
Turn-Off Threshold Voltage
Symbol
VCC
IQ
IDL
IDH
ISOURCE
ISINK
ISOURCE
ISINK
VT
Min
4
-100
1
1.8
-5
Typ
260
-15
0.85
0.66
3.3
-3
Max
20
400
10
-1
Unit
V
µA
nA
µA
A
A
A
mV
VG(OFF)
0.1 0.3
VG 10.5 10.85 —
Gate Output Voltage
VG(OFF)
VG
2.5
0.1
2.85
0.3
V
VG(OFF)
0.1 0.3
VG 10.5 11.2
Switching Performance
Turn-On Propagation Delay
Gate Rise Time
Turn-Off Propagation Delay
Gate Fall Time
tD(RISE)
tR
tD(FALL)
tF
400
695
400
131
Note:
11. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
ns
Test Condition
-0.6V VDRAIN 400V
VD = -0.1V
VD = 400V
CL = 47nF
VGATE = 5V & VDRAIN = -1V
VGATE = 5V & VDRAIN = 1V
VG 1V
VDRAIN ≥ 0mV &
VCC = 12V
VDRAIN = -8mV &
VCC = 12V
VDRAIN ≥ 0mV &
VCC = 4V
VDRAIN = -8mV &
VCC = 4V
VDRAIN 0mV &
VCC = 20V
VDRAIN = -8mV &
VCC = 20V
Load: 50nF capacitor
connected in parallel
with 50kresistor
CL = 47nF
Rise and Fall Measured 10% to 90%
Refer to Application Test Circuit Below
ZXGD3112N7
Document Number DS37739 Rev. 3 - 2
3 of 14
www.diodes.com
October 2018
© Diodes Incorporated



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