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UPA2726UT1A Datasheet, Equivalent, POWER MOSFET.N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET |
　
　
　
| Part | UPA2726UT1A |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Feature | DATA SHEET
MOS FIELD EFFECT TRANSISTOR
Î ¼ PA2726UT1A
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (U nit: mm)
The μ PA2726UT1A is N-channe l MOSFET designed for DC/DC converter a pplications. 1. 27 FEATURES • Low on -state resistance RDS(on)1 = 7. 0 mΩ MA X. (VGS = 10 V, ID = 10 A) RDS(on)2 = 1 1. 0 mΩ MAX. (VGS = 4. 5 V, ID = 10 A) â €¢ Low input capacitance Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V) • Thin type surface mount package with heat sp reader (8-pin HVSON) • RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected. ) Drain t o Source Voltage (VGS = 0 V . |
| Manufacture | NEC |
| Datasheet |
| Part | UPA2726UT1A |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Feature | DATA SHEET
MOS FIELD EFFECT TRANSISTOR
Î ¼ PA2726UT1A
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (U nit: mm)
The μ PA2726UT1A is N-channe l MOSFET designed for DC/DC converter a pplications. 1. 27 FEATURES • Low on -state resistance RDS(on)1 = 7. 0 mΩ MA X. (VGS = 10 V, ID = 10 A) RDS(on)2 = 1 1. 0 mΩ MAX. (VGS = 4. 5 V, ID = 10 A) â €¢ Low input capacitance Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V) • Thin type surface mount package with heat sp reader (8-pin HVSON) • RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected. ) Drain t o Source Voltage (VGS = 0 V . |
| Manufacture | NEC |
| Datasheet |
　
　
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